Planar semiconductor InGaAs/InP single photon avalanche diodes with high responsivity and low dark count rate are preferred single photon detectors in near-infrared communication.However,even with well-designed struct...Planar semiconductor InGaAs/InP single photon avalanche diodes with high responsivity and low dark count rate are preferred single photon detectors in near-infrared communication.However,even with well-designed structures and well-con-trolled operational conditions,the performance of InGaAs/InP SPADs is limited by the inherent characteristics of avalanche pro-cess and the growth quality of InGaAs/InP materials.It is difficult to ensure high detection efficiency while the dark count rate is controlled within a certain range at present.In this paper,we fabricated a device with a thick InGaAs absorption region and an anti-reflection layer.The quantum efficiency of this device reaches 83.2%.We characterized the single-photon performance of the device by a quenching circuit consisting of parallel-balanced InGaAs/InP single photon detectors and single-period sinus-oidal pulse gating.The spike pulse caused by the capacitance effect of the device is eliminated by using the characteristics of parallel balanced common mode signal elimination,and the detection of small avalanche pulse amplitude signal is realized.The maximum detection efficiency is 55.4%with a dark count rate of 43.8 kHz and a noise equivalent power of 6.96×10^(−17 )W/Hz^(1/2) at 247 K.Compared with other reported detectors,this SPAD exhibits higher SPDE and lower noise-equivalent power at a higher cooling temperature.展开更多
A signal processing method of realizing a large-range displacement measurement in a sinusoidal phase- modulating laser diode interferometer is proposed. The method of obtaining the dynamic value of the effective sinus...A signal processing method of realizing a large-range displacement measurement in a sinusoidal phase- modulating laser diode interferometer is proposed. The method of obtaining the dynamic value of the effective sinusoidal phase-modulating depth is detailed, and the residual amplitude modulation is also taken into account. Numerical simulations and experiments are carried out to compare this method with the traditional one. We prove that, with this method, the sinusoidal phase-modulating laser diode interferometer can realize a centimeter-level displacement measurement range with high precision, which is much better than the traditional method.展开更多
In this paper, a sinusoidal phase-modulating Fabry-Perot interferometer is proposed to measure angular displacement. The usefulness of the interferometer is demonstrated by simulations and experiments.
基金jointly supported by the National Key Research and Development Program of China (2019YFB22-05202)National Natural Science Foundation of China(61774152)
文摘Planar semiconductor InGaAs/InP single photon avalanche diodes with high responsivity and low dark count rate are preferred single photon detectors in near-infrared communication.However,even with well-designed structures and well-con-trolled operational conditions,the performance of InGaAs/InP SPADs is limited by the inherent characteristics of avalanche pro-cess and the growth quality of InGaAs/InP materials.It is difficult to ensure high detection efficiency while the dark count rate is controlled within a certain range at present.In this paper,we fabricated a device with a thick InGaAs absorption region and an anti-reflection layer.The quantum efficiency of this device reaches 83.2%.We characterized the single-photon performance of the device by a quenching circuit consisting of parallel-balanced InGaAs/InP single photon detectors and single-period sinus-oidal pulse gating.The spike pulse caused by the capacitance effect of the device is eliminated by using the characteristics of parallel balanced common mode signal elimination,and the detection of small avalanche pulse amplitude signal is realized.The maximum detection efficiency is 55.4%with a dark count rate of 43.8 kHz and a noise equivalent power of 6.96×10^(−17 )W/Hz^(1/2) at 247 K.Compared with other reported detectors,this SPAD exhibits higher SPDE and lower noise-equivalent power at a higher cooling temperature.
基金supported by the National Natural Science Foundation of China under Grant No.51475262
文摘A signal processing method of realizing a large-range displacement measurement in a sinusoidal phase- modulating laser diode interferometer is proposed. The method of obtaining the dynamic value of the effective sinusoidal phase-modulating depth is detailed, and the residual amplitude modulation is also taken into account. Numerical simulations and experiments are carried out to compare this method with the traditional one. We prove that, with this method, the sinusoidal phase-modulating laser diode interferometer can realize a centimeter-level displacement measurement range with high precision, which is much better than the traditional method.
文摘In this paper, a sinusoidal phase-modulating Fabry-Perot interferometer is proposed to measure angular displacement. The usefulness of the interferometer is demonstrated by simulations and experiments.
