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Determination of Slip Length in Couette Flow Based on an Analytical Simulation Incorporating Surface Interaction 被引量:1
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作者 赵欣 魏超 苑士华 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第3期77-81,共5页
An analytical simulation based on a new model incorporating surface interaction is conducted to study the slip phenomenon in the Couette flow at different scales. The velocity profile is calculated by taking account o... An analytical simulation based on a new model incorporating surface interaction is conducted to study the slip phenomenon in the Couette flow at different scales. The velocity profile is calculated by taking account of the micro-force between molecules and macro-force from the viscous shearing effect, as they contribute to the achieve- ment of the slip length. The calculated results are compared with those obtained from the molecular dynamics simulation, showing an excellent agreement. Further, the effect of the shear rate on the slip is investigated. The results can well predict the fluid flow behaviors on a solid substrate, but has to be proved by experiment. 展开更多
关键词 MD Determination of Slip Length in Couette Flow Based on an Analytical simulation Incorporating Surface Interaction
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Simulation of quantum-well slipping effect on optical bandwidth in transistor laser
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作者 Hassan Kaatuzian Seyed Iman Taghavi 《Chinese Optics Letters》 SCIE EI CAS CSCD 2009年第5期435-436,共2页
An optical bandwidth analysis of a quantum-well (16 nm) transistor laser with 150-μm cavity length using a charge control model is reported in order to modify the quantum-well location through the base region. At c... An optical bandwidth analysis of a quantum-well (16 nm) transistor laser with 150-μm cavity length using a charge control model is reported in order to modify the quantum-well location through the base region. At constant bias current, the simulation shows significant enhancement in optical bandwidth due to moving the quantum well in the direction of collector-base junction. No remarkable resonance peak, limiting factor in laser diodes, is observed during this modification in transistor laser structure. The method can be utilized for transistor laser structure design. 展开更多
关键词 WELL simulation of quantum-well slipping effect on optical bandwidth in transistor laser
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