Presents the model on the drag resistance to overcome discusses the equations used for calculation of spoked and solid wheel power and force, and gives a table of power output under a certain condition for comparison ...Presents the model on the drag resistance to overcome discusses the equations used for calculation of spoked and solid wheel power and force, and gives a table of power output under a certain condition for comparison of two types of wheels, and suggests a scheme to estimate power on a specific track, and the speed and the time spent on a certain track are compared to illustrate the functions of parameters.展开更多
This paper proposes a laterally graded junctionless transistor taking peak doping concentration near the source and drain region, and a gradual decrease in doping concentration towards the center of the channel to imp...This paper proposes a laterally graded junctionless transistor taking peak doping concentration near the source and drain region, and a gradual decrease in doping concentration towards the center of the channel to improve the I OFF and I ON/I OFF ratio. The decrease of doping concentration in the lateral direction of the channel region depletes a greater number of charge carriers compared to the uniformly doped channel in the OFF-state,which in turn suppresses the OFF state current flowing through the device without greatly affecting the ON state current.展开更多
文摘Presents the model on the drag resistance to overcome discusses the equations used for calculation of spoked and solid wheel power and force, and gives a table of power output under a certain condition for comparison of two types of wheels, and suggests a scheme to estimate power on a specific track, and the speed and the time spent on a certain track are compared to illustrate the functions of parameters.
文摘This paper proposes a laterally graded junctionless transistor taking peak doping concentration near the source and drain region, and a gradual decrease in doping concentration towards the center of the channel to improve the I OFF and I ON/I OFF ratio. The decrease of doping concentration in the lateral direction of the channel region depletes a greater number of charge carriers compared to the uniformly doped channel in the OFF-state,which in turn suppresses the OFF state current flowing through the device without greatly affecting the ON state current.
