This paper reports the development of solar-blind aluminum gallium nitride (AlGaN) 128×128 UV Focal Plane Arrays (FPAs). The back-illuminated hybrid FPA archi- tecture consists of an 128x128 back-illuminated AlGa...This paper reports the development of solar-blind aluminum gallium nitride (AlGaN) 128×128 UV Focal Plane Arrays (FPAs). The back-illuminated hybrid FPA archi- tecture consists of an 128x128 back-illuminated AlGaN PIN detector array that is bump-mounted to a matching 128x128 silicon CMOS readout integrated circuit (ROIC) chip. The 128×128 p-i-n photodiode arrays with cuton and cutoff wave-lengths of 233 and 258 nm, with a sharp reduction in response to UVB (280―320 nm) light. Several examples of solar-blind images are provided. This solar-blind band FPA has much better application prospect.展开更多
： Back-illuminated AlxGal-xN-based dual-band solar-blind ultraviolet （UV） photodetectors （PDs） are realized by a three-terminal n-i-p-i-n heterojunction structure which is grown on sapphire substrate by metal org...： Back-illuminated AlxGal-xN-based dual-band solar-blind ultraviolet （UV） photodetectors （PDs） are realized by a three-terminal n-i-p-i-n heterojunction structure which is grown on sapphire substrate by metal organic chemical vapor deposition （MOCVD）. The two p-i-n junctions contained in the heterojunction structure can work separately and independently. Working in the photovoltaic mode, the PDs display peak responsivity of ～10.8 mA/W at 242 nm and ～5.0 mA/W at 257 nm, respectively. The two junctions with different size, whose diameters are 500 μm and 800 μm, exhibit almost the same leakage current of ～1.3× 10-9 A at a reverse bias of 10 V. Therefore, dark current densities of the two junctions are close to 6.6 × 10-7 A/cm2 and 2.6 × 10-7 A/cm2 at -10 V respectively.展开更多
文摘This paper reports the development of solar-blind aluminum gallium nitride (AlGaN) 128×128 UV Focal Plane Arrays (FPAs). The back-illuminated hybrid FPA archi- tecture consists of an 128x128 back-illuminated AlGaN PIN detector array that is bump-mounted to a matching 128x128 silicon CMOS readout integrated circuit (ROIC) chip. The 128×128 p-i-n photodiode arrays with cuton and cutoff wave-lengths of 233 and 258 nm, with a sharp reduction in response to UVB (280―320 nm) light. Several examples of solar-blind images are provided. This solar-blind band FPA has much better application prospect.
文摘： Back-illuminated AlxGal-xN-based dual-band solar-blind ultraviolet （UV） photodetectors （PDs） are realized by a three-terminal n-i-p-i-n heterojunction structure which is grown on sapphire substrate by metal organic chemical vapor deposition （MOCVD）. The two p-i-n junctions contained in the heterojunction structure can work separately and independently. Working in the photovoltaic mode, the PDs display peak responsivity of ～10.8 mA/W at 242 nm and ～5.0 mA/W at 257 nm, respectively. The two junctions with different size, whose diameters are 500 μm and 800 μm, exhibit almost the same leakage current of ～1.3× 10-9 A at a reverse bias of 10 V. Therefore, dark current densities of the two junctions are close to 6.6 × 10-7 A/cm2 and 2.6 × 10-7 A/cm2 at -10 V respectively.
