Impacts of solar multiple on the performance of direct steam generation solar power tower plant with integrated thermal storage

Solar multiple （SM） and thermal storage capacity are two key design parameters for revealing the performance of direct steam generation （DSG） solar power tower plant. In the case of settled land area, SM and thermal storage capacity can be optimized to obtain the minimum levelized cost of electricity （LCOE） by adjusting the power generation output. Taking the dual-receiver DSG solar power tower plant with a given size of solar field equivalent electricity of 100 MWe in Sevilla as a reference case, the minimum LCOE is 21.77 /kWhe with an SM of 1.7 and a thermal storage capacity of 3 h. Besides Sevilla, two other sites are also introduced to discuss the influence of annual DNI. When compared with the case of Sevilla, the minimum LCOE and optimal SM of the San Jose site change just slightly, while the minimum LCOE of the Bishop site decreases by 32.8% and the optimal SM is reduced to 1.3. The influence of the size of solar field equivalent electricity is studied as well. The minimum LCOE decreases with the size of solar field, while the optimal SM and thermal storage capacity still remain unchanged. In addition, the sensitivity of different investment in sub-system is investigated. In terms ofoptimal SM and thermal storage capacity, they can decrease with the cost of thermal storage system but increase with the cost of power generation unit.

Direct Observation of Carrier Transportation Process in InGaAs/GaAs Multiple Quantum Wells Used for Solar Cells and Photodetectors

The resonant excitation is used to generate photo-excited carriers in quantum wells to observe the process of the carriers transportation by comparing the photoluminescence results between quantum wells with and without a p-n junction. It is observed directly in experiment that most of the photo-excited carriers in quantum wells with a p-n junction escape from quantum wells and form photoeurrent rather than relax to the ground state of the quantum wells. The photo absorption coei^cient of multiple quantum wells is also enhanced by a p-n junction. The results pave a novel way for solar cells and photodetectors making use of low-dimensional structure.

InxGa1-xN/GaN Multiple Quantum Well Solar Cells with Conversion Efficiency of 3.77%

We report on fabrication and photovoltaic characteristics of InxGa1-xN/GaN multiple quantum well solar cells with different indium compositions and barrier thicknesses. The as-grown samples are characterized by high- resolution x-ray diffraction and reciprocal space mapping. The results show that the sample with a thick barrier thickness （lO.Onm） and high indium composition （0.23） has better crystalline quality. In addition, the dark current density-voltage （J-V） measurement of this device shows a significant decrease of leakage current, which leads to high open-circuit voltage Vow. Through the J-V characteristics under an Air Mass 1.5 Global （AM 1.5 G） illumination, this device exhibits a Voc of 1.89 V, a short-circuit current density Ysc of 3.92mA/cm2 and a fill factor of 50.96%. As a result, the conversion efficiency （77） is enhanced to be 3.77% in comparison with other devices.