The increasing emphasis on the sub\|micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200nm. It is demonstrated that the crystalline qua...The increasing emphasis on the sub\|micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200nm. It is demonstrated that the crystalline quality of as\|grown thin SOS films by chemically vapor deposition method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self\|silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a great improvement in silicon layer crystallinity and channel carrier mobility, respectively by double crystal X\|ray diffraction and electrical measurements. Thin SPE SOS films would have application to the high\|performance CMOS circuitry.展开更多
The growth of Mn5Ge3 ultrathin films with different thicknesses, prepared by solid phase epitaxy, is studied. The results of scanning tunnelling microscopy and low energy electron diffraction studies show that the fil...The growth of Mn5Ge3 ultrathin films with different thicknesses, prepared by solid phase epitaxy, is studied. The results of scanning tunnelling microscopy and low energy electron diffraction studies show that the film can be formed and it is terminated with a （√3 × √3） R30° surface reconstruction when the thickness of Mn exceeds 3 monolayers. The magnetic properties show that the Curie temperature is about 300 K and the T^2-dependent behaviour is observed to remain up to 220 K.展开更多
The thermal annealing temperature dependence of solid phase epitaxial recrystallization, migration and incorporation of Er in Er+-implanted Si(100) have been investigated. It is shown in our experiment that the bulk c...The thermal annealing temperature dependence of solid phase epitaxial recrystallization, migration and incorporation of Er in Er+-implanted Si(100) have been investigated. It is shown in our experiment that the bulk crystalline Si acts as a seed for the initial solid phase epitaxial recrystallization. When Er segregates at the crystalline/amorphous interface to some extent, the epitaxial recrystallization is disrupted and the remaining damaged region is polycrystalline. For the irradiation at 350 keV, the maximum incorporation concentration in the recrystallized region decreases with increasing annealing temperature. However, the maximum incorporation concentration is anomalously enhanced for the sample irradiated with 150 keV Er+ and annealed at 850 degrees C.展开更多
文摘The increasing emphasis on the sub\|micron CMOS/SOS devices has placed a demand for high quality thin silicon on sapphire (SOS) films with thickness of the order 100-200nm. It is demonstrated that the crystalline quality of as\|grown thin SOS films by chemically vapor deposition method can be greatly improved by solid phase epitaxy (SPE) process: implantation of self\|silicon ions and subsequent thermal annealing. Subsequent regrowth of this amorphous layer leads to a great improvement in silicon layer crystallinity and channel carrier mobility, respectively by double crystal X\|ray diffraction and electrical measurements. Thin SPE SOS films would have application to the high\|performance CMOS circuitry.
文摘The growth of Mn5Ge3 ultrathin films with different thicknesses, prepared by solid phase epitaxy, is studied. The results of scanning tunnelling microscopy and low energy electron diffraction studies show that the film can be formed and it is terminated with a （√3 × √3） R30° surface reconstruction when the thickness of Mn exceeds 3 monolayers. The magnetic properties show that the Curie temperature is about 300 K and the T^2-dependent behaviour is observed to remain up to 220 K.
文摘The thermal annealing temperature dependence of solid phase epitaxial recrystallization, migration and incorporation of Er in Er+-implanted Si(100) have been investigated. It is shown in our experiment that the bulk crystalline Si acts as a seed for the initial solid phase epitaxial recrystallization. When Er segregates at the crystalline/amorphous interface to some extent, the epitaxial recrystallization is disrupted and the remaining damaged region is polycrystalline. For the irradiation at 350 keV, the maximum incorporation concentration in the recrystallized region decreases with increasing annealing temperature. However, the maximum incorporation concentration is anomalously enhanced for the sample irradiated with 150 keV Er+ and annealed at 850 degrees C.
