A solid phase crystallizing method has been developed to grow a Si crystal at tem-peratures as low as 550 ℃. Using this method, a high-quality thin-film polycrystalline silicon (Poly-Si) was obtained. The largest gra...A solid phase crystallizing method has been developed to grow a Si crystal at tem-peratures as low as 550 ℃. Using this method, a high-quality thin-film polycrystalline silicon (Poly-Si) was obtained. The largest grain size, examined with X-ray diffraction spectroscopy and scanning electron microscopy images of recrystallized samples, is approximately 1 /μm for substrate temperature at 300 ℃ and annealed at 550℃ for 3 hours.展开更多
基金This work was supported by the Guangdong Provincial Natural Science Foundation of China No.990781.
文摘A solid phase crystallizing method has been developed to grow a Si crystal at tem-peratures as low as 550 ℃. Using this method, a high-quality thin-film polycrystalline silicon (Poly-Si) was obtained. The largest grain size, examined with X-ray diffraction spectroscopy and scanning electron microscopy images of recrystallized samples, is approximately 1 /μm for substrate temperature at 300 ℃ and annealed at 550℃ for 3 hours.
