A high growth rate fabrication of diamond-like carbon（DLC）films at room temperature was achieved by helicon wave plasma chemical vapor deposition（HWP-CVD）using Ar/CH4gas mixtures.The microstructure and morphology ...A high growth rate fabrication of diamond-like carbon（DLC）films at room temperature was achieved by helicon wave plasma chemical vapor deposition（HWP-CVD）using Ar/CH4gas mixtures.The microstructure and morphology of the films were characterized by Raman spectroscopy and scanning electron microscopy.The diagnosis of plasma excited by a helicon wave was measured by optical emission spectroscopy and a Langmuir probe.The mechanism of high growth rate fabrication for DLC films by HWP-CVD has been discussed.The growth rate of the DLC films reaches a maximum value of 54μm h^-1at the CH4flow rate of 85 sccm,which is attributed to the higher plasma density during the helicon wave plasma discharge.The CH and Hαradicals play an important role in the growth of DLC films.The results show that the Hαradicals are beneficial to the formation and stabilization of C=C bond from sp^2to sp^3.展开更多
基金supported by National Natural Science Foundation of China(Nos.11175126,11375126,11435009,11505123)the National Magnetic Confinement Fusion Program of China(Nos.2014GB106005,2010GB106000)+1 种基金a project funded by China Postdoctoral Science Foundationa project funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions(PAPD)
文摘A high growth rate fabrication of diamond-like carbon（DLC）films at room temperature was achieved by helicon wave plasma chemical vapor deposition（HWP-CVD）using Ar/CH4gas mixtures.The microstructure and morphology of the films were characterized by Raman spectroscopy and scanning electron microscopy.The diagnosis of plasma excited by a helicon wave was measured by optical emission spectroscopy and a Langmuir probe.The mechanism of high growth rate fabrication for DLC films by HWP-CVD has been discussed.The growth rate of the DLC films reaches a maximum value of 54μm h^-1at the CH4flow rate of 85 sccm,which is attributed to the higher plasma density during the helicon wave plasma discharge.The CH and Hαradicals play an important role in the growth of DLC films.The results show that the Hαradicals are beneficial to the formation and stabilization of C=C bond from sp^2to sp^3.
