Space Charges Effect of Static Induction Transistor

The space charge effect (SCE) of static induction transistor (SIT) that occurs in high current region is systematically studied.The I V equations are deduced and well agree with experimental results.Two kinds of barriers are presented in SIT,corresponding to channel voltage barrier control (CVBC) mechanism and space charge limited control (SCLC) mechanism respectively.With the increase of drain voltage,the gradual transferring of operational mechanism from CVBC to SCLC is demonstrated.It points out that CVBC mechanism and its contest relationship with space charge barrier makes the SIT distinctly differentiated from JFET and triode devices,etc.The contest relationship of the two potential barriers also results in three different working regions,which are distinctly marked and analyzed.Furthermore,the extreme importance of grid voltage on SCE is illustrated.

Experimental investigation of limit space charge accumulation mode operation in a semi-insulating GaAs photoconductive semiconductor switch

Experiments with the limited space-charge accumulation（LSA） mode of oscillation in a large gap semiinsulating （SI） GaAs photoconductive semiconductor switch（PCSS） are discussed.It has been observed that growth and drift of a photo-activated charge domain（PACD） are quenched only when the bias voltage is more than twice the threshold voltage.The original negative resistance characteristics are directly utilized in the LSA mode;during LSA operation the spatial average of the electric field varies over a large portion of the negative differential mobility region of the velocity-electric field characteristic.The work efficiency of an SI GaAs PCSS is remarkably enhanced by electric field excursions into the positive resistance region when the total electric field is only below the threshold part of the time.The LSA mode can only operate in the certain conditions that satisfy the quenching of the accumulation layer and the smaller initial domain voltage.

Nonlinear Current-Voltage Characteristics and Electroluminescence of cBN Crystal

The current-voltage（I-V） characteristics of cBN crystal sandwiched between two metallic electrodes are measured and found to be nonlinear. Over 20 samples are measured at room temperature with various electrodes, and the resulting curves are all similar in shape. When a voltage of about 560V is applied to the cBN crystal, the emitted light is visible to the naked eye in a dark room. We explain these phenomena by the space charge limited current and the electronic transition between the X and Г valleys of the conduction band.

Research on the field emission mechanism of nano-structured carbon film

The field emission （FE） characteristics of nano-structured carbon films （NSCFs） are investigated. The saturation behaviour of the field emission current density found at high electric field E cannot be reasonably explained by the traditional Fowler-Nordheim （F-N） theory. A three-region E model and the curve-fitting method are utilized for discussing the FE characteristics of NSCFs. In the low, high, and middle E regions, the FE mechanism is reasonably explained by a modified F-N model, a corrected space-charge-limited-current （SCLC） model and the joint model of F N and SCLC mechanism, respectively. Moreover, the measured FE data accord well with the results from our corrected theoretical model.