The connection between APOTP （asymptotic pseudo orbit tracing property） for a continuous map on a compact metric space and that for the shift map on the inverse limit space is investigated. As an application, it is ...The connection between APOTP （asymptotic pseudo orbit tracing property） for a continuous map on a compact metric space and that for the shift map on the inverse limit space is investigated. As an application, it is showed that the shift map on Henderson pseudoarc has APOTP.展开更多
A two-dimensional solution of space-charge-limiting current for a high current vacuum diode with a spherical cathode is presented. The relation between space-charge-limiting current and electric field enhancement fact...A two-dimensional solution of space-charge-limiting current for a high current vacuum diode with a spherical cathode is presented. The relation between space-charge-limiting current and electric field enhancement factor at the cathode surface for the diode with a curved surface cathode is also discussed. It is shown that compared with the current given by the conventional Child-Langmuir law, which describes the one-dimensional space-charege-limiting current, the two-dimensional space-charge-limiting current in such a diode is enhanced due to the electric-field enhancement along the cathode surface. Among practical parameter ranges, enhancement factor ηb approximately satisfies ηb Aβn, where β is the electric field enhancement factor at the cathode surface, and n is a constant between 1 and 2, which is confirmed to be universal for the diodes with curved surface cathodes.展开更多
Numerical solutions to floating plasma potentials for walls emitting secondary elec- trons are obtained for various surface materials. The calculations are made with plasma moment equations and the secondary electron ...Numerical solutions to floating plasma potentials for walls emitting secondary elec- trons are obtained for various surface materials. The calculations are made with plasma moment equations and the secondary electron emission coefficients, which were determined from recent laboratory experiments. The results estimate the wall potentials up to the physical conditions that allow stable plasma sheaths under the space-charge-limited condition. The materials often used in the laboratory, such as aluminum, silicon, boron, molybdenum, silicon dioxide, and alumina, are considered. The minimum wall potential before the onset of space-charge-limited emission is determined by the electron temperatures at which the effective secondary electron emission coefficient integrated over the velocity distributions is about 0.62. The corresponding potential is given by -eφ0 ,- 1.87kBT. The condition for space-charge-limited emission is newly found by numerically searching for all the stable sheaths. The new condition is -eφ0 - 0.95kBT, and this predicts a wall potential that is less negative than the previously found one. Calculation of the power dissipated to the wall for hydrogen plasmas shows that there is a large difference in terms of power dissipation among the considered materials in the temperature range 20-50 eV.展开更多
The self-consistent differential equations, which describe a laminar-flow equilibrium state in a magnetically focused intense relativistic electron beam propagating inside a conducting waveguide, are presented. The ca...The self-consistent differential equations, which describe a laminar-flow equilibrium state in a magnetically focused intense relativistic electron beam propagating inside a conducting waveguide, are presented. The canonical angular momentum, Pe, defined under the conditions at the source, uniquely determines the possible solutions of these equations. By numerically solving these equations, the space-charge limited current and the externally applied magnetic field are obtained in a solid beam and a hollow beam in two cases of Pθ= 0 （magnetically shielded source） and Pθ= const. （immersed source） separately. It is shown that the hollow beam is more beneficial to the propagation of the intense relativistic beam through a drift tube than the solid beam.展开更多
In this paper, we prove that the best rational approximation of a given analytic function in Orlicz space L~*(G), where G = {|z|≤∈}, converges to the Pade approximants of the function as the measure of G approaches ...In this paper, we prove that the best rational approximation of a given analytic function in Orlicz space L~*(G), where G = {|z|≤∈}, converges to the Pade approximants of the function as the measure of G approaches zero.展开更多
Suppose that E and F are separable Banach spaces, X and Y are independent symmetric E and F-valued random vectors respectively. This paper is devoted to the study of the central limit theorem for X Y in the injective...Suppose that E and F are separable Banach spaces, X and Y are independent symmetric E and F-valued random vectors respectively. This paper is devoted to the study of the central limit theorem for X Y in the injective and projective tensor product spaces E F and E F. Special attention is paid to l2 l2. In addition, two counter-examples are given.展开更多
Li has introduced the concepts of inverse system and direct system for fuzzy topological spaces and studied inverse limits and direct limits on such spaces by presenting the explicit constructions of these limits.In t...Li has introduced the concepts of inverse system and direct system for fuzzy topological spaces and studied inverse limits and direct limits on such spaces by presenting the explicit constructions of these limits.In this paper some important concepts of fuzzy topology,such as,product fuzzy topology,quotient fuzzy topology,fuzzy continuity etc.,are used for further study of inverse limits and direct limits for fuzzy topological spaces.展开更多
The space charge effect (SCE) of static induction transistor (SIT) that occurs in high current region is systematically studied.The I V equations are deduced and well agree with experimental results.Two kinds of ...The space charge effect (SCE) of static induction transistor (SIT) that occurs in high current region is systematically studied.The I V equations are deduced and well agree with experimental results.Two kinds of barriers are presented in SIT,corresponding to channel voltage barrier control (CVBC) mechanism and space charge limited control (SCLC) mechanism respectively.With the increase of drain voltage,the gradual transferring of operational mechanism from CVBC to SCLC is demonstrated.It points out that CVBC mechanism and its contest relationship with space charge barrier makes the SIT distinctly differentiated from JFET and triode devices,etc.The contest relationship of the two potential barriers also results in three different working regions,which are distinctly marked and analyzed.Furthermore,the extreme importance of grid voltage on SCE is illustrated.展开更多
基金Supported by the NNSF of China (10361001) the NSF of the Education Committee of Jiangsu Province (05KJB110033)Young Teachers' Project of College of Anhui Province (2006jqll62).
文摘The connection between APOTP （asymptotic pseudo orbit tracing property） for a continuous map on a compact metric space and that for the shift map on the inverse limit space is investigated. As an application, it is showed that the shift map on Henderson pseudoarc has APOTP.
文摘A two-dimensional solution of space-charge-limiting current for a high current vacuum diode with a spherical cathode is presented. The relation between space-charge-limiting current and electric field enhancement factor at the cathode surface for the diode with a curved surface cathode is also discussed. It is shown that compared with the current given by the conventional Child-Langmuir law, which describes the one-dimensional space-charege-limiting current, the two-dimensional space-charge-limiting current in such a diode is enhanced due to the electric-field enhancement along the cathode surface. Among practical parameter ranges, enhancement factor ηb approximately satisfies ηb Aβn, where β is the electric field enhancement factor at the cathode surface, and n is a constant between 1 and 2, which is confirmed to be universal for the diodes with curved surface cathodes.
基金supported partially by the National Space Lab(No.2009-0091569)BK21+ program through the National Research Foundation(NRF)funded by the Ministry of Education of Korea
文摘Numerical solutions to floating plasma potentials for walls emitting secondary elec- trons are obtained for various surface materials. The calculations are made with plasma moment equations and the secondary electron emission coefficients, which were determined from recent laboratory experiments. The results estimate the wall potentials up to the physical conditions that allow stable plasma sheaths under the space-charge-limited condition. The materials often used in the laboratory, such as aluminum, silicon, boron, molybdenum, silicon dioxide, and alumina, are considered. The minimum wall potential before the onset of space-charge-limited emission is determined by the electron temperatures at which the effective secondary electron emission coefficient integrated over the velocity distributions is about 0.62. The corresponding potential is given by -eφ0 ,- 1.87kBT. The condition for space-charge-limited emission is newly found by numerically searching for all the stable sheaths. The new condition is -eφ0 - 0.95kBT, and this predicts a wall potential that is less negative than the previously found one. Calculation of the power dissipated to the wall for hydrogen plasmas shows that there is a large difference in terms of power dissipation among the considered materials in the temperature range 20-50 eV.
基金Project supported by the National Natural Science Foundation of China （Grant No 10476004）.
文摘The self-consistent differential equations, which describe a laminar-flow equilibrium state in a magnetically focused intense relativistic electron beam propagating inside a conducting waveguide, are presented. The canonical angular momentum, Pe, defined under the conditions at the source, uniquely determines the possible solutions of these equations. By numerically solving these equations, the space-charge limited current and the externally applied magnetic field are obtained in a solid beam and a hollow beam in two cases of Pθ= 0 （magnetically shielded source） and Pθ= const. （immersed source） separately. It is shown that the hollow beam is more beneficial to the propagation of the intense relativistic beam through a drift tube than the solid beam.
基金This research is suported by National Science foundation Grant.
文摘In this paper, we prove that the best rational approximation of a given analytic function in Orlicz space L~*(G), where G = {|z|≤∈}, converges to the Pade approximants of the function as the measure of G approaches zero.
文摘Suppose that E and F are separable Banach spaces, X and Y are independent symmetric E and F-valued random vectors respectively. This paper is devoted to the study of the central limit theorem for X Y in the injective and projective tensor product spaces E F and E F. Special attention is paid to l2 l2. In addition, two counter-examples are given.
文摘Li has introduced the concepts of inverse system and direct system for fuzzy topological spaces and studied inverse limits and direct limits on such spaces by presenting the explicit constructions of these limits.In this paper some important concepts of fuzzy topology,such as,product fuzzy topology,quotient fuzzy topology,fuzzy continuity etc.,are used for further study of inverse limits and direct limits for fuzzy topological spaces.
文摘The space charge effect (SCE) of static induction transistor (SIT) that occurs in high current region is systematically studied.The I V equations are deduced and well agree with experimental results.Two kinds of barriers are presented in SIT,corresponding to channel voltage barrier control (CVBC) mechanism and space charge limited control (SCLC) mechanism respectively.With the increase of drain voltage,the gradual transferring of operational mechanism from CVBC to SCLC is demonstrated.It points out that CVBC mechanism and its contest relationship with space charge barrier makes the SIT distinctly differentiated from JFET and triode devices,etc.The contest relationship of the two potential barriers also results in three different working regions,which are distinctly marked and analyzed.Furthermore,the extreme importance of grid voltage on SCE is illustrated.
