There is currently great optimism within the electronics community that gallium oxide(Ga_(2)O_(3)) ultra-wide bandgap semiconductors have unprecedented prospects for eventually revolutionizing a rich variety of power ...There is currently great optimism within the electronics community that gallium oxide(Ga_(2)O_(3)) ultra-wide bandgap semiconductors have unprecedented prospects for eventually revolutionizing a rich variety of power electronic applications. Specially, benefiting from its ultra-high bandgap of around 4.8 eV, it is expected that the emerging Ga_(2)O_(3) technology would offer an exciting platform to deliver massively enhanced device performance for power electronics and even completely new applications.展开更多
文摘There is currently great optimism within the electronics community that gallium oxide(Ga_(2)O_(3)) ultra-wide bandgap semiconductors have unprecedented prospects for eventually revolutionizing a rich variety of power electronic applications. Specially, benefiting from its ultra-high bandgap of around 4.8 eV, it is expected that the emerging Ga_(2)O_(3) technology would offer an exciting platform to deliver massively enhanced device performance for power electronics and even completely new applications.
