Alcohol-dispersed polymer complex as an effective and durable interface modifier for n-i-p perovskite solar cells

Abundant interfacial defects remain a significant challenge that hampers both the efficiency and stability of perovskite solar cells(PSCs).Herein,an alcohol-dispersed conducting polymer complex,denoted as PEDOT:F(Poly(3,4-ethylene dioxythiophene):Perfluorinated sulfonic acid ionomers),is introduced into the interface between perovskite and hole transporting layer in regular-structured PSCs.PEDOT:F serves as a multi-functional interface layer(filling grain boundaries and covering perovskite's grain-surface)to achieve a robust interaction with organic groups within perovskites,which could induce a structural transformation of PEDOT to increase its conductivity for the efficient hole-transport.Furthermore,the strong interaction between PEDOT and perovskites could promote an effective coupling of undercoordinated Pb~(2+)ions with the lone electron pairs near O&S atoms in PEDOT molecules,thereby enhancing defect passivation.Additionally,PEDOT:F with inherent hydrophobic properties prevents effectively moisture invasion into perovskites for the improved long-term stability of the PSCs.Consequently,the PEDOT:F-based PSCs achieved a champion efficiency of 24.81%,and maintained ca.92%of their initial efficiency after 7680 h of storage in a dry air environment,accompanied by the enhanced photothermal stability.

Effect of Switching on Metal-Organic Interface Adhesion Relevant to Organic Electronic Devices

Considerable efforts are currently being devoted to investigation of metal-organic, organic-organic and organic-inorganic interfaces relevant to organic electronic devices such as organic light emitting diode (OLEDs), organic photovoltaic solar cells, organic field effect transistors (OFETs), organic spintronic devices and organic-based Write Once Read Many times (WORM) memory devices on both rigid and flexible substrates in laboratories around the world. The multilayer structure of these devices makes interfaces between dissimilar materials in contact and plays a prominent role in charge transport and injection efficiency which inevitably affect device performance. This paper presents results of an initial study on how switching between voltage thresholds and chemical surface treatment affects adhesion properties of a metal-organic (Au-PEDOT:PSS) contact interface in a WORM device. Contact and Tapping-mode Atomic Force Microscopy (AFM) gave surface topography, phase imaging and interface adhesion properties in addition to SEM/EDX imaging which showed that surface treatment, switching and surface roughness all appeared to be key factors in increasing interface adhesion with implications for increased device performance.

Reduced Recombination Current Due to Sputtered CdO Nanolayer at CdS/CdTe Interface

In this paper, interface engineering via sputtering of CdO nanolayer at the buffer-CdS/CdTe-absorber interface is demonstrated as an efficient approach to improve the performance of solar cell device. The i-CdO interfacial layer with various thicknesses from 5 nm to 35 nm was deposited by DC magnetron sputtering. Comparative studies on TCO/CdS/CdTe and TCO/CdS/CdO/CdTe interfaces have been conducted by current-voltage, capacitance-voltage and admittance spectroscopy measurements. The current-voltage characteristics of the devices with an area of 0.45 cm2 under 100 mW/cm2 illumination, at the optimum thickness of CdO intermediate layer in the proposed structures, show increases of the short circuit current density and the open circuit voltage by 5% and 25%, respectively. The efficiency improvement of 3.1% of p-i-n cell over p-n cell is observed. Results of the temperature-dependent current-voltage and admittance measurements revealed the removing of the deep level defect with the activation energy of 0.43 eV and the reducing of the ideality factor from 1.9 to 1.8 via buffer/absorber interfacial passivation method. Interface passivation appears to be critical to improve the short circuit current density and the open circuit voltage, and CdO thin film is clearly effective for this purpose.

A review of ultrafast laser micro/nano fabrication:Material processing,surface/interface controlling,and devices fabrication

Ultrafast laser processing technology has offered a wide range of opportunities in micro/nano fabrication and other fields such as nanotechnology,biotechnology,energy science,and photonics due to its controllable processing precision,diverse processing capabilities,and broad material adaptability.The processing abilities and applications of the ultrafast laser still need more exploration.In the field of material processing,controlling the atomic scale structure in nanomaterials is challenging.Complex effects exist in ultrafast laser surface/interface processing,making it difficult to modulate the nanostructure and properties of the surface/interface as required.In the ultrafast laser fabrication of micro functional devices,the processing ability needs to be improved.Here,we review the research progress of ultrafast laser micro/nano fabrication in the areas of material processing,surface/interface controlling,and micro functional devices fabrication.Several useful ultrafast laser processing methods and applications in these areas are introduced.With various processing effects and abilities,the ultrafast laser processing technology has demonstrated application values in multiple fields from science to industry.

Controller Design for a 3 D.O.F Haptic Interface Device

This paper presents a 3 D.O.F haptic interface which is designed to meet the interaction requirement of teleoperation tasks and virtual reality applications. The mechanism design takes the operability into consideration such as adopting steel cable as transmission component and mass balance to eliminate the gravity effect. The dynamics of haptic interface including actuating device is studied. In order to provide operator with fidelity kinesthetic information, a force controller using self-learning fuzzy logic control is designed. The simulation results verify the effectiveness of the control method.

New Forward Gated-Diode Technique for Separating Front Gate Interface- from Oxide-Traps Induced by Hot-Carrier-Stress in SOI-NMOSFETs

The front gate interface and oxide traps induced by hot carrier stress in SOI NMOSFETs are studied.Based on a new forward gated diode technique,the R G current originating from the front interface traps is measured,and then the densities of the interface and oxide traps are separated independently.The experimental results show that the hot carrier stress of front channel not only results in the strong generation of the front interface traps,but also in the significant oxide traps.These two kinds of traps have similar characteristic in increasing with the hot carrier stress time.This analysis allows one to obtain a clear physical picture of the effects of the hot carrier stress on the generating of interface and oxide traps,which help to understand the degradation and reliability of the SOI MOSFETs.

A Method to Separate Effects of Oxide-Trapped Charge and Interface-Trapped Charge on Threshold Voltage in pMOSFETs Under Hot-Carrier Stress

A simple new method based on the measurement of charge pumping technique is proposed to separate and quantify experimentally the effects of oxide-trapped charges and interface-trapped charges on threshold voltage degradation in p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) under hot-carrier stress.Further,the experimental results verify the validness of this method.It is shown that,all three mechanisms of electron trapping effect,hole trapping effect and interface trap generation play important roles in p-channel MOSFETs degradation.It is noted that interface-trapped charge is still the dominant mechanism for hot-carrier-induced degradation in p-channel MOSFETs,while a significant contribution of oxide-trapped charge to threshold voltage is demonstrated and quantified.

Photoluminescence of a ZnO/GaN Heterostructure Interface

Growth of a ZnO/GaN heterostructure is carried out using pulsed laser deposition. By etching the ZnO layer from the ZnO/GaN structure, the photoluminescence （PL） of the associated GaN layer shows that the donor- acceptor luminescence of CaN shifts to about 3.27eV, which is consistent with the electroluminescence （EL） of n-ZnO/p-GaN already reported. XPS shows that oxygen diffuses into the CaN crystal lattice from the surface to 20nm depth. The PL spectra at different temperatures and excitation densities show that oxygen plays the role of potential fluctuation. The associated PL results of the interface in these LEDs could be helpful to understand the mechanism of EL spectra for ZnO/CaN p-n junctions.

Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates

The total dose effect of ^(60)Co γ-rays on 0.8μm H-gate partially depleted-silicon-on-insulator NMOS devices was investigated at different irradiation doses. The results show that the shift in saturation current at high dose rate is greater than that at low dose rate, due to increase in interface-state density with decreasing dose rate; the scattering effect of interface state on electrons in the channel causes degradation in carrier mobility; and the body current and transconductance of the back gate enhance low-doserate sensitivity when the irradiation is under OFF-bias. A double transconductance peak is observed at 3 kGy(Si)under high dose rates.

Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal–oxide–semiconductor devices

The effect of nitric oxide（NO） annealing on charge traps in the oxide insulator and transition layer in n-type4H–Si C metal–oxide–semiconductor（MOS） devices has been investigated using the time-dependent bias stress（TDBS）,capacitance–voltage（C–V）,and secondary ion mass spectroscopy（SIMS）.It is revealed that two main categories of charge traps,near interface oxide traps（Nniot） and oxide traps（Not）,have different responses to the TDBS and C–V characteristics in NO-annealed and Ar-annealed samples.The Nniotare mainly responsible for the hysteresis occurring in the bidirectional C–V characteristics,which are very close to the semiconductor interface and can readily exchange charges with the inner semiconductor.However,Not is mainly responsible for the TDBS induced C–V shifts.Electrons tunneling into the Not are hardly released quickly when suffering TDBS,resulting in the problem of the threshold voltage stability.Compared with the Ar-annealed sample,Nniotcan be significantly suppressed by the NO annealing,but there is little improvement of Not.SIMS results demonstrate that the Nniotare distributed within the transition layer,which correlated with the existence of the excess silicon.During the NO annealing process,the excess Si atoms incorporate into nitrogen in the transition layer,allowing better relaxation of the interface strain and effectively reducing the width of the transition layer and the density of Nniot.

A New Conducting Polymer Electrode for Organic Electroluminescence Devices

Conducting polymer polydimethylsiloxane （PDMS） is studied for the high performance electrode of organic electroluminescence devices. A method to prepare the electrode consisting of a SiC thin film and PDMS is investigated. By using ultra thin SiC films with different thicknesses, the organic electroluminescence devices are obtained in an ultra vacuum system with the model device PDMS/SiC/PPV/Alq3, where PPV is poly para-phenylene vinylene and Alq3 is tris（S-hydroxyquinoline） aluminium. The capacitance voltage （C - V）, capacitance-frequency （C - F）, current-voltage （I - V）, radiation intensity-voltage （R - V） and luminance eFficiency-voltage （E - V） measurements are systematically studied to investigate the conductivity, Fermi alignment and devices properties in organic semiconductors. Scanning Kelvin probe measurement shows that the work function of PDMS/SiC anode with a 2.5-nm SiC over layer can be increased by as much as 0.28eV, compared to the conventional ITO anode. The result is attributed to the charge transfer effect and ohmic contacts at the interface.

Effect of Interface Nanotexture on Light Extraction of InGaN-Based Green Light Emitting Diodes

We report the enhancement of the light extraction of InGaN-based green light emitting diodes （LEDs） via the interface nanotexturing. The texture consists of high-density nanocraters on the surface of a sapphire substrate with an in situ etching. The width of nanocraters is about 0.5 μm and the depth is around 0.1 μm. It is demonstrated that the LEDs with interface texture exhibit about a 27% improvement in luminance intensity, compared with standard LEDs. High power InGaN-based green LEDs are obtained by using the interface nanotexture. An optical ray-tracing simulation is performed to investigate the effect of interface nanotexture on light extraction.

Influences of Interface States on Resistive Switching Properties of TiOx with Different Electrodes

Different TiOx thin films prepared by graded or sufficient oxidization of Ti are applied with Pt or Ag electrode in metal？insulator-metal （MIM） structures for studying the properties and mechanisms of resistive switching. The differences on the mobile oxygen vacancies in TiOx films and different work functions of the electrode films result in different insulator-metal interface states, which are displayed as ohmic-like or non-ohmic contact. Based on the interface states, the electrical models for MIM devices are analyzed and extracted. The electrode-limited effect and the bulk-limited effect can be unified to explain the mechanisms for resistive switching behavior as the dominant effect respectively in various conditions. All the current-voltage curves of the four kinds of specimens measured in the experiments can be explained and proved in accordance with the theory.

Exploring how hydrogen at gold-sulfur interface affects spin transport in single-molecule junction

Very recently,experimental evidence showed that the hydrogen is retained in dithiol-terminated single-molecule junction under the widely adopted preparation conditions,which is in contrast to the accepted view[Nat.Chem.11351(2019)].However,the hydrogen is generally assumed to be lost in the previous physical models of single-molecule junctions.Whether the retention of the hydrogen at the gold-sulfur interface exerts a significant effect on the theoretical prediction of spin transport properties is an open question.Therefore,here in this paper we carry out a comparative study of spin transport in M-tetraphenylporphyrin-based(M=V,Cr,Mn,Fe,and Co;M-TPP)single-molecule junction through Au-SR and Au-S(H)R bondings.The results show that the hydrogen at the gold-sulfur interface may dramatically affect the spin-filtering efficiency of M-TPP-based single-molecule junction,depending on the type of transition metal ions embedded into porphyrin ring.Moreover,we find that for the Co-TPP-based molecular junction,the hydrogen at the gold-sulfur interface has no obvious effect on transmission at the Fermi level,but it has a significant effect on the spin-dependent transmission dip induced by the quantum interference on the occupied side.Thus the fate of hydrogen should be concerned in the physical model according to the actual preparation condition,which is important for our fundamental understanding of spin transport in the single-molecule junctions.Our work also provides guidance in how to experimentally identify the nature of gold-sulfur interface in the single-molecule junction with spin-polarized transport.

Materials Design on the Origin of Gap States in a High-κ/GaAs Interface

Given the demand for constantly scaling micro- electronic devices to ever smaller dimensions, a SiO2 gate dielectric was substituted with a higher dielectric-constant material, Hf（Zr）O2, in order to minimize current leakage through dielectric thin film. However, upon interfacing with high dielectric constant （high-κ） dielectrics, the electron mobility in the conventional Si channel degrades due to Coulomb scattering, surface-roughness scattering, remotephonon scattering, and dielectric-charge trapping.Ⅲ-Ⅴ and Ge are two promising candidates with superior mobility over Si. Nevertheless, Hf（Zr）O2/Ⅲ-Ⅴ（Ge） has much more complicated interface bonding than Si-based interfaces. Successful fabrication of a high-quality device critically depends on understanding and engineering the bonding configurations at Hf（Zr）O2/Ⅲ-Ⅴ（Ge） interfaces for the optimal design of device interfaces. Thus, an accurate atomic insight into the interface bonding and mechanism of interface gap states formation becomes essential. Here, we utilize first- principle calculations to investigate the interface between HfO2 and GaAs. Our study shows that As--As dimer bonding, Ga partial oxidation （between 3＋ and 1＋） and Ga- dangling bonds constitute the major contributions to gap states. These findings provide insightful guidance for optimum interface passivation.

基于AS-Interface的超声波开关

介绍了A S-Interface总线系统,提供了基于A S-Interface的超声波开关装置的设计方法。

医疗脑机接口技术的法律规制

区别于其他大脑神经技术和传统治疗方法,通过脑机接口技术可以传输、解读和记录神经数据。神经数据经过解码不仅可以反映健康信息,还可以揭露思想隐私。另外,脑机接口技术可以通过刺激直接干预患者的情绪、思想、甚至行为。对于医疗脑机接口技术应该适度规制,需要兼顾生命身体健康权和人性尊严法益,神经数据合理利用和隐私保护。具体规.制路径包括:对医疗脑机接口技术研究进行严格的伦理审查,对脑机接口医疗器械进行特殊的审批监管,对知情同意的履行进行特别的程序保障,对神经数据进行专门的立法保护。

基于原子/分子团簇结构的材料与器件制造

原子/分子团簇是物质结构的一种新形态,具有独特的本征性质。从原子/分子团簇到器件的跨尺度制造,将为国防高端装备和新兴电子等产业发展带来深刻变革。团簇的多物质构效关系、宏量制造、团簇结构跨尺度构筑以及团簇器件的高性能制造等是原子/分子团簇器件制造的关键发展方向,主导着从原子到产品制造的发展历程。把握这些发展背后的重要机遇,将有助于占领原子级制造研究的制高点,引领原子级制造方法的变革。本文从团簇新材料的宏量制造、新型功能器件的原子/分子团簇构筑、团簇—器件的跨尺度制造工艺和装备等三个方面概括了原子/分子团簇与器件制造领域的主要研究进展,总结了原子/分子团簇与器件领域的关键科学问题及面临的挑战,并对其未来发展方向和发展战略给出了建议。

纳米材料中的界面现象

在课程教学中融入科学前沿实例不仅可以阐明所学基本原理的实际意义,还可以为基本原理的灵活应用提供范例,启发学生独立思考能力。界面化学是物理化学课程中的重要学习内容,但由于在常规尺度的多相体系中界面现象并不显著,学生对该部分知识常有忽视。近年来纳米材料已成为国内外研究的热点。纳米材料由于其高界面分子比例而表现出更为显著的界面现象。将界面化学的基本原理应用于纳米材料的研究中,已取得了一系列令人瞩目的成果。本文首先对附加压力、接触角等相关界面现象的基本原理进行梳理,然后分别介绍根据这些基本原理所发展出的分子马达、光控微流控器件、液体门控技术以及超疏水表面四项科技突破。