A new compound with one-dimensional spin chains, Ba9Co3Se(15), was synthesized under high pressure and high temperature conditions and systematically characterized via structural, transport and magnetic measurements. ...A new compound with one-dimensional spin chains, Ba9Co3Se(15), was synthesized under high pressure and high temperature conditions and systematically characterized via structural, transport and magnetic measurements. Ba9Co3Se(15) crystallizes in a hexagonal structure with the space group P-6c2(No. 188) and lattice constants of a = b = 9.6765 ? and c = 18.9562 ?. The structure consists of trimeric face-sharing octahedral CoSe6 chains, which are arranged in a triangular lattice in the ab-plane and separated by Ba atoms. The distance of the nearest neighbor of CoSe6 chains is very large, given by the lattice constant a = 9.6765 ?. The Weiss temperature Tθ associated with the intra-chain coupling strength is about -346 K. However, no long-range magnetic order but a spin glass transition at ~ 3 K has been observed. Our results indicate that the spin glass behavior in Ba9Co3Se(15) mainly arises from the magnetic frustration due to the geometrically frustrated triangular lattice.展开更多
Planarization used in a gate-last CMOS device was successfully developed by particular technologies of SOG two-step plasma etch-back plus one special etch-back step for SOG/SiO_2 interface trimming.The within-the-wafe...Planarization used in a gate-last CMOS device was successfully developed by particular technologies of SOG two-step plasma etch-back plus one special etch-back step for SOG/SiO_2 interface trimming.The within-the-wafer ILD thickness non-uniformity can reach 4.19%with a wafer edge exclusion of 5 mm.SEM results indicated that there was little＂dish effect＂on the 0.4μm gate-stack structure and finally achieved a good planarization profile on the whole substrate.The technology provided a CMP-less process basis for sub-100 nm high-k/metal gate-last CMOS integration.展开更多
基金Project supported by the National Key R&D Program of China and the National Natural Science Foundation of China(Grant Nos.2018YFA0305700,2017YFA0302900,11974410,and 11534016)。
文摘A new compound with one-dimensional spin chains, Ba9Co3Se(15), was synthesized under high pressure and high temperature conditions and systematically characterized via structural, transport and magnetic measurements. Ba9Co3Se(15) crystallizes in a hexagonal structure with the space group P-6c2(No. 188) and lattice constants of a = b = 9.6765 ? and c = 18.9562 ?. The structure consists of trimeric face-sharing octahedral CoSe6 chains, which are arranged in a triangular lattice in the ab-plane and separated by Ba atoms. The distance of the nearest neighbor of CoSe6 chains is very large, given by the lattice constant a = 9.6765 ?. The Weiss temperature Tθ associated with the intra-chain coupling strength is about -346 K. However, no long-range magnetic order but a spin glass transition at ~ 3 K has been observed. Our results indicate that the spin glass behavior in Ba9Co3Se(15) mainly arises from the magnetic frustration due to the geometrically frustrated triangular lattice.
基金Project supported by the Chinese National Science and Technology Major Project(No.2009ZX02035)the Special Funds for Major State Basic Research Projects,China(No.2006CB302704)the Opening Project of Key Laboratory of Microelectronics Devices of Integrated Technology(IMECAS)
文摘Planarization used in a gate-last CMOS device was successfully developed by particular technologies of SOG two-step plasma etch-back plus one special etch-back step for SOG/SiO_2 interface trimming.The within-the-wafer ILD thickness non-uniformity can reach 4.19%with a wafer edge exclusion of 5 mm.SEM results indicated that there was little＂dish effect＂on the 0.4μm gate-stack structure and finally achieved a good planarization profile on the whole substrate.The technology provided a CMP-less process basis for sub-100 nm high-k/metal gate-last CMOS integration.
