Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy （PMA） are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy （PMA） are introduced. ...Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy （PMA） are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy （PMA） are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE-TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn-Ga, L10-ordered （Co, Fe）/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, AU]N, and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory.展开更多
基金supported by the State Key Project of Fundamental Research of Ministry of Science and Technology,China(Grant No.2010CB934400)the National Natural Science Foundation of China(Grant Nos.51229101 and 11374351)
文摘Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy （PMA） are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy （PMA） are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE-TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn-Ga, L10-ordered （Co, Fe）/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, AU]N, and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory.
