Preparation of Se-based solar cell using spin-coating method in ambient condition

A new hybrid organic-inorganic structure of FTO/TiO2/Se/HTL/Au based selenium solar cell has been fabricated through a low-cost spin-coating process in air. In this process, selenium is completely dissolved in hydrazine, to fk）rm a homogeneous precursor solution. After spin-coating the precursor solution on the TiO2 substrates, following by sintering at 200 ℃ for 5rain, a uniform selenium film with crystalline grains is formed. The selenium based solar cell exhibits an efficiency of 1.23% under AM1.5 illumination （100 mW.cm-2）, short-circuit current density of 8 mA.cm 2, open-circuit voltage of 0.55 V, and fill factor of 0.37. Moreover, the device shows a stable ability with almost the same performance alter 60 days.

Structural, Optical and Luminescence Properties of ZnO Thin Films Prepared by Sol-Gel Spin-Coating Method： Effect of Precursor Concentration

Transparent zinc oxide（ZnO） thin films are fabricated by a simple sol-gel spin-coating technique on glass substrates with different solution concentrations（0.3-1.2 M） using zinc acetate dehydrate [Zn（CH_3COO）_2·2H_2O] as precursor and isopropanol and monoethanolamine（MEA） as solvent and stabilizer, respectively. The molar ratio of zinc acetate dehydrate to MEA is 1.0. X-ray diffraction, ultraviolet-visible spectroscopy and photoluminescence spectroscopy are employed to investigate the effect of solution concentration on the structural and optical properties of the ZnO thin films. The obtained results of all thin films are discussed in detail and are compared with other experimental data.

Polymer solar cells based on a PEDOT:PSS layer spin-coated under the action of an electric field

In the process of fabrication of polymer photovoltaic （PV） devices, poly （3, 4-ethylenedioxythiophene）： poly（styrenesulfonate） （PEDOT：PSS） thin film, acting as an anode buffer layer, is spin-coated under the action of an electric field. The PV devices with a PEDOT：PSS layer spin-coated under the action of a static electric field exhibit improved short-circuit current density （Jsc） and power conversion efficiency （PCE）. The investigation of morphology shows that the appropriate intensity of the electric field can increase the roughness of the surface of the PEDOT：PSS layer, which results in improved contact between the anode and hole transport layer and thus enhances the Jsc of the devices. Chemical analysis is also provided by x-ray photoelectron spectroscopy （XPS） spectra.

Increasing Dye-Sensitized Solar Cell Efficiency by ZnO Spin-Coating of the TiO₂Electrode: Effect of ZnO Amount

This paper is concerned with the improvement of dye-sensitized solar cell (DSSC) efficiency upon ZnO-coating of the TiO2 electrode. Sol-gel ZnO of controlled amount by varying the number of sol drops during spin-coating is shown to increase the DSSC efficiency. The highest efficiency is obtained at a single sol drop with enhancement of 40%, while beyond this amount the efficiency falls down sharply to zero. Based on measured optical absorption spectra of the different dye-loaded electrodes, it is concluded that this amount of ZnO sol corresponds to the thinnest layer that can create the energy barrier to minimize the electron recombination rate without seriously affecting the dye adsorption efficiency of the TiO2 film.

ZnO Spin-Coating of TiO₂Photo-Electrodes to Enhance the Efficiency of Associated Dye-Sensitized Solar Cells

Dye-sensitized solar cells (DSSCs) with ZnO spin-coated TiO2 photo-electrodes are compared to DSSC with a bare TiO2 photo-electrode. It is demonstrated that the deposited ZnO of controlled amount, by varying the precursor concentration in the coating sol, can indeed enhance the performance of the DSSC. The measured power conversion efficiency shows a maximum around the precursor concentration 0.1 M and falls down sharply to 0% beyond this point. The results are interpreted on the basis of two competing factors: At ZnO concentrations less than 0.1 M, the formation of an energy barrier increases the photocurrent by reducing the rate of interfacial back-recombination. At ZnO concentrations greater than 0.1 M, the screening of the TiO2 film by thicker ZnO layers decreases the photocurrent through the reduction of TiO2 dye-adsorption efficiency.

Recent Advances in Spin-coating Precursor Mediated Chemical Vapor Deposition of Two-Dimensional Transition Metal Dichalcogenides

Two-dimensional(2D)transition metal dichalcogenides(TMDs)have garnered widespread interest in the scientific community and industry for their exceptional physical and chemistry properties,and great potential for applications in diverse fields including(opto)electronics,electrocatalysis,and energy storage.Chemical vapor deposition(CVD)is one of the most compelling growth methods for the scalable growth of high-quality 2D TMDs.However,the conventional CVD process for synthesis of 2D TMDs still encounters significant challenges,primarily attributed to the high melting point of precursor powders,and achieving a uniform distribution of precursor atmosphere on the substrate to obtain controllable smaple domains is difficult.The spin-coating precursor mediated chemical vapor deposition(SCVD)strategy provides refinement over traditional methods by eliminating the use of solid precursors and ensuring a more clean and uniform distribution of the growth material on the substrate.Additionally,the SCVD process allows fine-tuning of material thickness and purity by manipulating solution composition,concentration,and the spin coating process.This Review presents a comprehensive summary of recent advances in controllable growth of 2D TMDs with a SCVD strategy.First,a series of various liquid precursors,additives,source supply methods,and substrate engineering strategies for preparing atomically thin TMDs by SCVD are introduced.Then,2D TMDs heterostructures and novel doped TMDs fabricated through the SCVD method are discussed.Finally,the current challenges and perspectives to synthesize 2D TMDs using SCVD are discussed.

Highly efficient solution-processed CZTSSe solar cells based on a convenient sodium-incorporated post-treatment method

In CZTSSe solar cells,a simple sodium-incorporation post-treatment method toward solution-processed Cu2Zn Sn S4precursor films is presented in this work.An ultrathin NaCl film is deposited on Cu2Zn Sn S4precursor films by spin-coating NaCl solution.In subsequent selenization process,the introduction of Na Cl is found to be benefacial for the formation of Cu2-xSe,which can further facilitate the element transportation,leading to dense and smooth CZTSSe films with large grains and less impurity Cu2Sn(S,Se)3phase.SIMS depth profiles confirm the gradient distribution of the sodium element in Na-doped absorbers.Photoluminescence spectra show that the introduction of appropriate sodium into the absorber can inhibit the band tail states.As high as 11.18% of power conversion efficiency(PCE)is achieved for the device treated with 5 mg mL^-1 NaCl solution,and an average efficiency of Na-doped devices is 10.71%,13%higher than that of the control groups(9.45%).Besides,the depletion width and the charge recombination lifetime can also have regular variation with sodium treatment.This work offers an easy modification method for high-quality Na-doped CZTSSe films and high-performance devices,in the meantime,it can also help to further understand the effects of sodium in CZTSSe solar cells.

Effective Improvement of the Photovoltaic Performance of Carbon-Based Perovskite Solar Cells by Additional Solvents

A solvent-assisted methodology has been developed to synthesize CH_3NH_3 PbI_3perovskite absorber layers.It involved the use of a mixed solvent of CH_3NH_3 I,PbI_2,c-butyrolactone,and dimethyl sulfoxide(DMSO) followed by the addition of chlorobenzene(CB).The method produced ultra-flat and dense perovskite capping layers atop mesoporous TiO_2 films,enabling a remarkable improvement in the performance of free hole transport material(HTM) carbon electrode-based perovskite solar cells(PSCs).Toluene(TO) was also studied as an additional solvent for comparison.At the annealing temperature of 100 °C,the fabricated HTM-free PSCs based on drop-casting CB demonstrated power conversion efficiency(PCE) of 9.73 %,which is 36 and 71 % higher than those fabricated from the perovskite films using TO or without adding an extra solvent,respectively.The interaction between the PbI_2–DMSO–CH_3NH_3I intermediate phase and the additional solvent was discussed.Furthermore,the influence of the annealing temperature on the absorber film formation,morphology,and crystalline structure was investigated and correlated with the photovoltaic performance.Highly efficient,simple,and stable HTM-free solar cells with a PCE of 11.44 % were prepared utilizing the optimum perovskite absorbers annealed at 120 °C.

Preparation and Enhanced Daylight-Induced Photo-Catalytic Activity of Transparent C-Doped TiO_2 Thin Films

The transparent C-doped TiO2 nanostructure films were fabricated on the silicate glass substrates by sol-gel spin-coated method. The as-prepared films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, UV-visible absorption spectra （UV-vis） and X-ray photoelectron spectroscopy （XPS）. The photocatalytic activity was evaluated via the photocatalytic oxidation of methylene blue in aqueous under daylight irradiation at room temperature. The results show that the daylight-induced photocatalytic activities of the as-prepared films are improved by the C-doping. The calcination temperatures significantly affect the morphology, microstructure and photocatalytic activity of the as-prepared samples. At 723 K, the C-doped TiO2 films exhibit the highest photocatalytic activity due to the synergetic effects of good crystallization, appropriate oxygen vacancies and strong absorption in the near UV and visible-light region.

Surface and interface analysis of HAP/TiO2 composite films on Ti6Al4V

The composite films constituted of hydroxyapatite (HAP) submicron particles embedded in the gel composed of the titania nanoparticles were prepared on commercial Ti6Al4V plates with titania buffer layer obtained by a spin-coating technique. The films were annealed in air at 450 ℃, 550 ℃ and 650 ℃, respectively. The phase formation, surface morphology, andinterfacial microstructure of the films were investigated by X-ray diffraction(XRD),Fourier transform infrared spectroscopy (FT-IR), field emission-scanning electron microscopy(FE-SEM) and energy dispersive X-ray (EDS) analysis. The results show that the as-prepared films are all well-crystallized, dense,homogeneous, and there was a close interfacial bond between the film and the substrate. The results of adhesion test indicate that there is a good bonding strength between the film and the substrate. The bone-like apatite formation on the surface of the films after immersion in acellular simulatedbody fluid(SBF) validated their bioactivities.

Structure distortion, optical and electrical properties of ZnO thin films co-doped with Al and Sb by sol-gel spin coating

ZnO thin films co-doped with A1 and Sb with different concentrations and a fixed molar ratio of AlCl3 to SbCl3 at 1：2, are prepared by a sol-gel spin-coating method on glass annealed at 550 ℃ for 2 h in air. The x-ray diffraction results confirm that the ZnO thin films co-doped with Al distortion, and the biaxial stresses are 1.03× 10^8. 3.26× 10^8 and Sb are of wurtzite hexagonal ZnO with a very small 5.23 × 10^8, and 6.97× 10^8 Pa, corresponding to those of the ZnO thin films co-doped with Al and Sb in concentrations of 1.5, 3.0, 4.5, 6.0 at% respectively. The optical properties reveal that the ZnO thin films co-doped with Al and Sb have obviously enhanced transmittance in the visible region. The electrical properties show that ZnO thin film co-doped with Al and Sb in a concentration of 1.5 at% has a lowest resistivity of 2.5 Ω·cm.

Spin coating of TPB film on acrylic substrate and measurement of its wavelength shifting efficiency

Scintillation light from a liquid noble gas during a neutrino or dark matter experiment lies typically within the vacuum ultraviolet region and might be strongly absorbed by surrounding materials such as light guides or photomultipliers.Tetraphenyl butadiene(TPB)is a fluorescent material,acts as a wavelength shifter,and can turn UV light into visible light at a peak wavelength of approximately 425 nm,enabling the light signals to be easily detected during physics studies.Compared with a traditional TPB coating method using vapor deposition,we propose an alternative technique applying a spin-coating procedure to facilitate the development of neutrino and dark matter detectors.This article introduces a method to fabricate a TPB film on an acrylic substrate by using a spincoating method,reports the measurements of the sample film thickness and roughness,demonstrates the reemission spectrum,and quantifies the wavelength shifting efficiency.

Study on the Tin Oxide Sol-Gel Membrane as a pH Sensing Electrode

In this study,tin oxide sensing membrane was derived by sol-gel method and was coated onto indium tin oxide (ITO) glass substrate by spin-coating technique to fabricate a pH sensing electrode.Besides,the morphology of the tin oxide membrane has been discussed through the instrumental analysis.Furthermore,the sensing characteristics of the pH electrode was measured by commercial instrumental amplifier as the readout circuit.Owing to the sol-gel method has many advantages such as easy fabrication of gel solution,ability to dope other materials without any expensive fabricating equipment.Hence,it is suitable for the mass production of a disposable sensor.

Solution Processable Material Derived from Aromatic Triazole, Azomethine and Tris: Preparation and Hole-Buffering Application in Polymer Light-Emitting Diodes

This work presents the synthesis of a new hole-buffering material TAZS and its successful application in polymer light-emitting diodes to enhance device performance. The TAZS is composed of aromatic 1,2,4-triazolylcore linked with three trihydroxy tert-butyl terminals via azomethine linkages. The TAZS forms ashomogeneous film deposited by spin-coating process. The HOMO and LUMO levels of TAZS are -5.23 eV and -2.40 eV, respectively, as estimated from cyclic voltammogram. The current density results of hole-only and electron-only devices confirm strong hole-buffering capability of TAZS layer. Multilayer PLEDs with different thickness of TAZS (ITO/PEDOT: PSS/TAZS (x nm)/SY/ETL/LiF/Al) have been successfully fabricated, using spin-coating process to deposit hole-injecting PEDOT: PSS, TAZS, and emissive SY layers. The PLED with 16 nm TAZS reveals the optimal device performance, with maximum luminance and maximum current efficiency of 19,046 cd/m2 and 4.08 cd/A, respectively, surpassing those without TAZS as HBL (8484 cd/m2, 2.13 cd/A). The hole-buffering characteristic of TAZS contributes greatly to improved charges’ recombination ratio and enhanced emission efficiency.

Hole-Buffer Material Derived from Pyrene, Schiff Base and Tris to Enhance Emission Efficiency of Polymer Light-Emitting Diodes

Inserting a hole-buffer layer is an effective way to enhance emission efficiency of electroluminescence devices. We have successfully synthesized a new hole-buffer material PSB composed of pyrene, Schiff base and trihydroxy tert-butyl groups by the Suzuki-coupling reaction. The HOMO and LUMO lev-els were -6.33 eV and -2.55 eV, respectively, as estimated from cyclic volt-ammograms. In addition, homogeneous films (rms roughness ~2 nm) were readily obtained by spin-coating process. Multilayer polymer light-emitting diodes, ITO/PEDOT:PSS/PSB/SY/LiF/Al, have been fabricated using PSB as hole-buffer layer (HBL). Inserting PSB as HBL significantly enhances the per-formance (maximum luminance: 26,439 cd/m2, maximum current efficiency: 7.03 cd/A), compared with the one without PSB (9802 cd/m2, 2.43 cd/A). It is also superior to the device with conventional BCP as hole-blocking layer (ITO/PEDOT:PSS/SY/BCP/LiF/Al: 15,496 cd/m2, 5.56 cd/A). Current results strongly indicate that the PSB is a potential hole-buffer material for electrolu-minescent devices.

Direct Transfer of GaAs Microtube Arrays onto Transparent Substrates for Imaging Neuron Outgrowth

We introduce a direct method for transferring arrays of GaAs microtubes from an opaque substrate to a transparent glass substrate in a controlled manner. This enables us to build a platform for optical readout of the microtubes’ interaction with overgrown cellular networks. We achieve this by applying a double layer of polydimethylsiloxane (PDMS). The first PDMS layer serves as a smooth and mechanically compliant transparent substrate. The second, adhesive layer contains a mixture of PDMS and n-hexane, which creates a layer thickness smaller than the tube diameter. This will prevent the tubes from sinking into the substrate. The microtubes themselves are made of GaAs heterostructures. The direct bandgap of the material allows for the integration of embedded optical device components into the tube wall. The microtubes have diameters on the same scale as typical mouse cortical axons, being on average 1 μm. The axons can be grown through the tubes, hence maximally enhancing the capacitive coupling of the signal source (axon) and the electrode (tube). Although the tube material is toxic to cells, we are able to overcome this by a parylene-coating step.

Plasma-etching on monolithic MOFs-based MIM filter boosted chemical sensing

Metal-insulator-metal(MIM)cavity as a lithography-free structure to control light transmission and reflection has great potential in the field of optical sensing.However,the dense top metal layer of the MIM prohibits any external medium from entering the dielectric insulation layer,which limits the application of the cavity in the sensing field.Herein,we demonstrate a series of monolithic metal-organic frameworks(MOFs)based MIM cavities,which are treated by plasma etching to provide channels for chemical diffusion and to advance sensing.We modulate the bandwidth of the MIM filters by controlling the MOF thickness as insulator layers.Oxygen plasma-etching is applied to build channels on the top metal layer without altering their saturation and brightness for chemical sensing performance.The etching time regulates the number and size of channels on the top metal layer.Sensing behavior is demonstrated on the plasma-etched MOFs-based MIM cavity when external chemicals diffuse in the cavity.In addition,we generate patterned structure of the MOFs-based MIM cavity via plasma-mask method,which can transfer to different substrates and produce a controllable structure color change for chemical sensing.Our MIM cavity may promote the advancement and applications of structural color in security imaging,color display,information anticounterfeiting,and color printing.

A novel method to prepare metal oxide electrode:Spin-coating with thermal decomposition

In this work,we propose a new spin-coating method coupling with high thermal decomposition,to prepare the tin-antimony（Sn-Sb） oxide electrode.The character of the spin-coating electrode was compared with the dip-coating electrode through X-ray diffraction（XRD）,scanning electron microscopy（SEM）,accelerated life test,cyclic voltammetry,and electrolytic degradability. The results showed that the spin-coating electrode had a better defined crystal form,a smoother and more compact surface than that of the dip-coating electrode.Service time of the spin-coating electrode was determined to be longer than 15 h,and it was less than 2 min for the dip-coating electrode.Electrochemical characterization analysis showed that the electrolytic degradability of the spin-coating electrode is better than that of the dip-coating electrode.

Density-controllable nonvolatile memory devices having metal nanocrystals through chemical synthesis and assembled by spin-coating technique

A novel two-step method is employed, for the first time, to fabricatc nonvolatile memory devices that have metal nanoerystals. First, size-averaged Au nanocrystals are synthesized chemically; second, they are assembled into memory devices by a spin-coating technique at room temperature. This attractive approach makes it possible to tailor the diameter and control the density of nanocrystals individually. In addition, processes at room temperature prevent Au diffusion, which is a main concem for the application of metal nanocrystal-based memory. The experimental results, both the morphology characterization and the electrical measurements, reveal that there is an optimum density of nanocrystal monolayer to balance between long data retention and a large hysteresis memory window. At the same time, density-controllable devices could also feed the preferential emphasis on either memory window or retention time. All these facts confirm the advantages and novelty of our two-step method.

Optical property of an antireflection coating fabricated by an optimal spin-coating method with a pH-modified SiO2 nanoparticle solution

An antireflection （AR） coating is fabricated by applying an optimal spin-coating method and a pH-modified SiO2 nanoparticle solution on a cover glass. Because the pH value of the solution will affect the aggregation and dispersion of the SiO2 particles, the transmittance of the AR-treated cover glass will be enhanced under optimal fabricated conditions. The experimental results show that an AR coating fabricated by an SiO2 nano- particle solution of pH 11 enhances the transmittance approximately by 3% and 5% under normal and oblique incident conditions, respectively. Furthermore, the AR-treated cover glass exhibits hydrophobicity and shows a 65% enhancement at a contact angle to bare glass.