Detecting Larmor Precession of a Single Spin with a Spin-Polarized Tunneling Current

Detection and manipulation of a single spin is essential for spin-based quantum information and computation.We propose an experimental method to detect the Larmor precession of a single spin with a spin-polarized tunneling current.The calculation demonstrates that the modulation of the tunneling current is significantly increased as compared with the non-spin-polarized current.The signal-to-noise ratio in the current power spectrum will be dramatically improved by this method.The longitudinal relaxation time can be measured by temporal control of spin orientation with pulses of magnetic field or radio frequency electromagnetic wave,while the transverse relaxation time can be derived by analyzing the resonant peak profile with a spectrum analyzer.Such ability in characterizing spin relaxation is of particular interest in providing insights into the coherence/decoherence of a single spin.

Asymmetrical Spin-Polarized Tunneling in a Composed-Barrier Magnetic Tunnel Junctions Under the Forward and Reverse Biases

Based on the two-band model and nearly-free-electron approximation, the tunnel current, conductance and mag-netoresistance of the composed-barrier magnetic tunnel junctions ( MTJ ) under the forward and reverse biases are discussed, respectively, and the numerical results are compared with the experimental results of the single-barrier MTJ . We find that there exists an asymmetrical spin-polarized tunneling in this structure under the forward and reverse biases. It suggests that this type of MTJ will provide novel functions to the potential applications of traditional types of MTJ.

Spin-Polarized Tunneling Spectroscopy and Shot Noise in Ferromagnet／f-WaveSuperconductor Junctions

The tunneling spectroscopy and shot noise in ferromagnet/insulator/triplet-superconductor (FM/I/tripletSC) structures are studied by taking into account the roughness interfacial barrier and exchange splitting in the FM.For the triplet-SC of Sr2RuO4, we consider two-dimensional f-wave order parameter symmetries having nodes within the RuO2 plane, which reasonably describe both thermodynamic and thermal conductivity data. It is shown that the ferromagnetic exchange splitting gives rise to a decrease in the differential conductance, the average current, and the shot noise power, while the noise power-to-current ratio is increased; the interface roughness is found to lead to a decrease in the differential conductance and the average current, and an increase in the noise power-to-current ratio.

On the critical particle size of soil with clogging potential in shield tunneling

Shield tunneling is easily obstructed by clogging in clayey strata with small soil particles.However,soil clogging rarely occurs in strata with coarse-grained soils.Theoretically,a critical particle size of soils should exist,below which there is a high risk of soil clogging in shield tunneling.To determine the critical particle size,a series of laboratory tests was carried out with a large-scale rotary shear apparatus to measure the tangential adhesion strength of soils with different particle sizes and water contents.It was found that the tangential adhesion strength at the soilesteel interface gradually increased linearly with applied normal pressure.When the particle size of the soil specimen was less than 0.15 mm,the interfacial adhesion force first increased and then decreased as the water content gradually increased;otherwise,the soil specimens did not manifest any interfacial adhesion force.The amount of soil mass adhering to the steel disc was positively correlated with the interfacial adhesion force,thus the interfacial adhesion force was adopted to characterize the soil clogging risk in shield tunneling.The critical particle size of soils causing clogging was determined to be 0.15 mm.Finally,the generation mechanism of interfacial adhesion force was explored for soils with different particle sizes to explain the critical particle size of soil with clogging risk in shield tunneling.

Melatonin,tunneling nanotubes,mesenchymal cells,and tissue regeneration

Mesenchymal stem cells are multipotent stem cells that reside in many human tissues and organs.Mesenchymal stem cells are widely used in experimental and clinical regenerative medicine due to their capability to transdifferentiate into various lineages.However,when transplanted,they lose part of their multipotency and immunomodulatory properties,and most of them die after injection into the damaged tissue.In this review,we discuss the potential utility of melatonin in preserving mesenchymal stem cells’survival and function after transplantation.Melatonin is a pleiotropic molecule regulating critical cell functions including apoptosis,endoplasmic reticulum stress,and autophagy.Melatonin is also synthesized in the mitochondria where it reduces oxidative stress,the opening of the mitochondrial permeability transition pore and the downstream caspase activation,activates uncoupling proteins,and curtails the proinflammatory response.In addition,recent findings showed that melatonin also promotes the formation of tunneling nanotubes and the transfer of mitochondria between cells through the connecting tubules.As mitochondrial dysfunction is a primary cause of mesenchymal stem cells death and senescence and a critical issue for survival after transplantation,we propose that melatonin by favoring mitochondria functionality and their transfer through tunneling nanotubes from healthy to suffering cells could improve mesenchymal stem cellbased therapy in a large number of diseases for which basic and clinical trials are underway.

Development of a simple two-step lithography fabrication process for resonant tunneling diode using air-bridge technology

This article reports on the development of a simple two-step lithography process for double barrier quantum well(DBQW)InGaAs/AlAs resonant tunneling diode(RTD)on a semi-insulating indium phosphide(InP)substrate using an air-bridge technology.This approach minimizes processing steps,and therefore the processing time as well as the required resources.It is particularly suited for material qualification of new epitaxial layer designs.A DC performance comparison between the proposed process and the conventional process shows approximately the same results.We expect that this novel technique will aid in the recent and continuing rapid advances in RTD technology.

GaAs-based resonant tunneling diode:Device aspects from design,manufacturing,characterization and applications

This review article discusses the development of gallium arsenide(GaAs)-based resonant tunneling diodes(RTD)since the 1970s.To the best of my knowledge,this article is the first review of GaAs RTD technology which covers different epitaxialstructure design,fabrication techniques,and characterizations for various application areas.It is expected that the details presented here will help the readers to gain a perspective on the previous accomplishments,as well as have an outlook on the current trends and future developments in GaAs RTD research.

Analytical solutions for the restraint effect of isolation piles against tunneling-induced vertical ground displacements

This paper presents a simplified elastic continuum method for calculating the restraint effect of isolation piles on tunneling-induced vertical ground displacement,which can consider not only the relative sliding of the pile‒soil interface but also the pile rowesoil interaction.The proposed method is verified by comparisons with existing theoretical methods,including the boundary element method and the elastic foundation method.The results reveal the restraining mechanism of the isolation piles on vertical ground displacements due to tunneling,i.e.the positive and negative restraint effects exerted by the isolation piles jointly drive the ground vertical displacement along the depth direction from the original tunneling-induced nonlinear variation situation to a relatively uniform situation.The results also indicate that the stiffness of the pile‒soil interface,including the pile shaft‒surrounding soil interface and pile tip-supporting soil interface,describes the strength of the pile‒soil interaction.The pile rows can confine the vertical ground displacement caused by the tunnel excavation to the inner side of the isolation piles and effectively prevent the vertical ground displacement from expanding further toward the outer side of the isolation piles.

Correction to:Wear mechanism and life prediction of the ripper in a 9‐m‐diameter shield machine tunneling project of the Beijing new airport line in a sand‐pebble stratum

Jiang H,Zhu J,Zhang X,Zhang J,Li H,Meng L.Wear mechanism and life prediction of the ripper in a 9‐m‐diameter shield machine tunneling project of the Beijing new airport line in a sand‐pebble stratum.Deep Undergr Sci Eng.2022;1:65‐76.doi:10.1002/dug2.12010.

An In-Situ Formed Tunneling Layer Enriches the Options of Anode for Efficient and Stable Regular Perovskite Solar Cells

Perovskite solar cells(PSCs)are taking steps to commercialization.However,the halogen-reactive anode with high cost becomes a stumbling block.Here,the halogen migration in PSCs is utilized to in situ generate a uniform tunneling layer between the hole transport materials and anodes,which enriches the options of anodes by breaking the Schottky barrier,enabling the regular PSCs with both high efficiency and stability.Specifically,the regular PSC that uses silver iodide as the tunneling layer and copper as the anode obtains a champion power conversion efficiency of 23.24%(certified 22.74%)with an aperture area of 1.04 cm^(2).The devices are stable,maintaining 98.6%of the initial effi-ciency after 500 h of operation at the maximum power point with continuous 1 sun illumination.PSCs with different tunneling layers and anodes are fabricated,which confirm the generality of the strategy.

A non-quasi-static model for nanowire gate-all-around tunneling field-effect transistors

Nanowires with gate-all-around(GAA) structures are widely considered as the most promising candidate for 3-nm technology with the best ability of suppressing the short channel effects,and tunneling field effect transistors(TFETs)based on GAA structures also present improved performance.In this paper,a non-quasi-static(NQS) device model is developed for nanowire GAA TFETs.The model can predict the transient current and capacitance varying with operation frequency,which is beyond the ability of the quasi-static(QS) model published before.Excellent agreements between the model results and numerical simulations are obtained.Moreover,the NQS model is derived from the published QS model including the current-voltage(I-V) and capacitance-voltage(C-V) characteristics.Therefore,the NQS model is compatible with the QS model for giving comprehensive understanding of GAA TFETs and would be helpful for further study of TFET circuits based on nanowire GAA structure.

Quantum tunneling in the surface diffusion of single hydrogen atoms on Cu(001)

The adsorption and diffusion of hydrogen atoms on Cu(001)are studied using first-principles calculations.By taking into account the contribution of zero-point energy(ZPE),the originally identical barriers are shown to be different for H and D,which are respectively calculated to be~158 me V and~139 me V in height.Using the transfer matrix method(TMM),we are able to calculate the accurate probability of transmission across the barriers.The crucial role of quantum tunneling is clearly demonstrated at low-temperature region.By introducing a temperature-dependent attempting frequency prefactor,the rate constants and diffusion coefficients are calculated.The results are in agreement with the experimental measurements at temperatures from~50 K to 80 K.

Total removal of a large esophageal schwannoma by submucosal tunneling endoscopic resection:A case report and review of literature

BACKGROUND Primary schwannoma is a rare submucosal tumor of the esophagus,which is most often benign,and surgery is the only effective treatment.So far,only a few cases have been reported.Herein,we reported a single case diagnosed with primary esophageal schwannoma that was totally removed by submucosal tunneling endoscopic resection(STER).CASE SUMMARY A 62-year-old man presented to the hospital with a history of resection of a malignant gastric tumor and mild dysphagia.Endoscopic examination revealed a large submucosal elevated lesion in the esophagus 25-30 cm from the incisors.Endoscopic ultrasonography detected a 45 mm×35 mm×31 mm hypoechoic lesion;chest computed tomography showed a mass of approximately 55 mm×35 mm×29 mm.A preliminary examination showed features suggestive of a stromal tumor.Pathological findings indicated esophageal schwannoma.Next,STER alone was performed to completely resect the mass,and the patient recovered well post-surgery.Afterward,the patient was discharged and showed no tumor recurrence at 33 mo of follow-up.CONCLUSION Endoscopic resection is still an effective treatment for large esophageal schwannomas(>30 mm)under meticulous morphological evaluation.

Activated dissociation of H_(2) on the Cu(001)surface:The role of quantum tunneling

The activation and dissociation of hydrogen molecules(H_(2))on the Cu(001)surface are studied theoretically.Using first-principles calculations,the activation barrier for the dissociation of H_(2) on Cu(001)is determined to be~0.59 eV in height.It is found that the electron transfer from the copper substrate to H_(2) plays a key role in the activation and breaking of the H–H bond,and the formation of the Cu–H bonds.Two stationary states are identified at around the critical height of bond breaking,corresponding to the molecular and the dissociative states,respectively.Using the transfer matrix method,we also investigate the role of quantum tunneling in the dissociation process along the minimum energy pathway(MEP),which is found to be significant at or below room temperature.At a given temperature,the tunneling contributions due to the translational and the vibrational motions of H_(2) are quantified for the dissociation process.Within a wide range of temperature,the effects of quantum tunneling on the effective barriers of dissociation and the rate constants are observed.The deduced energetic parameters associated with the thermal equilibrium and non-equilibrium(molecular beam)conditions are comparable to experimental data.In the low-temperature region,the crossover from classical to quantum regime is identified.

Tunneling via surface dislocation in W/β-Ga_(2)O_(3) Schottky barrier diodes

In this work,W/β-Ga_(2)O_(3)Schottky barrier diodes,prepared using a confined magnetic field-based sputtering method,were analyzed at different operation temperatures.Firstly,Schottky barrier height increased with increasing temperature from 100 to 300 K and reached 1.03 eV at room temperature.The ideality factor decreased with increasing temperature and it was higher than 2 at 100 K.This apparent high value was related to the tunneling effect.Secondly,the series and on-resistances decreased with increasing operation temperature.Finally,the interfacial dislocation was extracted from the tunneling current.A high dislocation density was found,which indicates the domination of tunneling through dislocation in the transport mecha-nism.These findings are evidently helpful in designing better performance devices.

Adjusting amplitude of the stored optical solitons by inter-dot tunneling coupling in triple quantum dot molecules

We study the propagation properties of a probe field in an aligned asymmetric triple quantum dot molecule with both sides inter-dot tunneling coupling effect. It is shown that the probe field can form optical soliton due to the destructive quantum interference induced by the quantum inter-dot tunneling coupling effect. Interestingly, these optical solitons can be stored and retrieved by adjusting single or double inter-dot tunneling coupling effect, different from that light memory in the ultra-cold atom system. Furthermore, we also find that the amplitude of the stored optical soliton can be adjusted by the strength of the single or double inter-dot tunneling coupling. It is possible to improve the stability and the fidelity of the optical information in the process of the storage and retrieval in semiconductor quantum dots devices.

Effects of bias on spin-polarized transport properties in double magnetic tunnel junctions

Spin-polarized transport properties in Fe /insulator (Ⅰ) (semiconductor (S)) / Co / I (S) / Fe double junction systems are investigated theoretically, current density is asymmetry as function of the direction of applied bias, and evaluated using generalized formalism base on the non-equilibrium Green's function, which is implemented with calculation of real space Green's function in tight-binding model in linear response region.

Magnetic Switching Dynamics and Tunnel Magnetoresistance Effect Based on Spin-Splitting Noncollinear Antiferromagnet Mn_(3)Pt

In comparison to ferromagnets,antiferromagnets are believed to have superior advantages for applications in next-generation magnetic storage devices,including fast spin dynamics,vanishing stray fields and robust against external magnetic field,etc.However,unlike ferromagnetic orders,which could be detected through tunneling magnetoresistance effect in magnetic tunnel junctions,the antiferromagnetic order(i.e.,Néel vector)cannot be effectively detected by the similar mechanism due to the spin degeneracy of conventional antiferromagnets.Recently discovered spin-splitting noncollinear antiferromagnets,such as Mn_(3)Pt with momentum-dependent spin polarization due to their special magnetic space group,make it possible to achieve remarkable tunneling magnetoresistance effects in noncollinear antiferromagnetic tunnel junctions.Through first-principles calculations,we demonstrate that the tunneling magnetoresistance ratio can reach more than 800% in Mn_(3)Pt/perovskite oxides/Mn_(3)Pt antiferromagnetic tunnel junctions.We also reveal the switching dynamics of Mn_(3)Pt thin film under magnetic fields using atomistic spin dynamic simulation.Our study provides a reliable method for detecting Néel vector of noncollinear antiferromagnets through the tunnel magnetoresistance effect and may pave its way for potential applications in antiferromagnetic memory devices.

Analysis of the interaction between bolt-reinforced rock and surface support in tunnels based on convergence-confinement method

To investigate the interaction of the bolt-reinforced rock and the surface support,an analytical model of the convergence-confinement type is proposed,considering the sequential installation of the fully grouted rockbolts and the surface support.The rock mass is assumed to be elastic-brittle-plastic material,obeying the linear Mohr-Coulomb criterion or the non-linear Hoek-Brown criterion.According to the strain states of the tunnel wall at bolt and surface support installation and the relative magnitude between the bolt length and the plastic depth during the whole process,six cases are categorized upon solving the problem.Each case is divided into three stages due to the different effects of the active rockbolts and the passive surface support.The fictitious pressure is introduced to quantify the threedimensional(3D)effect of the tunnel face,and thus,the actual physical location along the tunnel axis of the analytical section can be considered.By using the bolt-rock strain compatibility and the rocksurface support displacement compatibility conditions,the solutions of longitudinal tunnel displacement and the reaction pressure of surface support along the tunnel axis are obtained.The proposed analytical solutions are validated by a series of 3D numerical simulations.Extensive parametric studies are conducted to examine the effect of the typical parameters of rockbolts and surface support on the tunnel displacement and the reaction pressure of the surface support under different rock conditions.The results show that the rockbolts are more effective in controlling the tunnel displacement than the surface support,which should be installed as soon as possible with a suitable length.For tunnels excavated in weak rocks or with restricted displacement control requirements,the surface support should also be installed or closed timely with a certain stiffness.The proposed method provides a convenient alternative approach for the optimization of rockbolts and surface support at the preliminary stage of tunnel design.

Mechanism of high-preload support based on the NPR anchor cable in layered soft rock tunnels

The control of large deformation problems in layered soft rock tunnels needs to solve urgently.The roof problem is particularly severe among the deformation issues in tunnels.This study first analyzes the asymmetric deformation modes in layered soft rock tunnels with large deformations.Subsequently,we construct a mechanical model under ideal conditions for controlling the roof of layered soft rock tunnels through high preload with the support of NPR anchor cables.The prominent roles of long and short NPR anchor cables in the support system are also analyzed.The results indicate the significance of high preload in controlling the roof of layered soft rock tunnels.The short NPR anchor cables effectively improve the integrity of the stratified soft rock layers,while the long NPR anchor cables effectively mobilize the self-bearing capacity of deep-stable rock layers.Finally,the high-preload support method with NPR anchor cables is validated to have a good effect on controlling large deformations in layered soft rock tunnels through field monitoring data.