The spontaneous emission property ofΛ-type three-level atom driven by the bichromatic field in the anisotropic double-band photonic crystal is calculated by n-times iteration method.The influence of different paramet...The spontaneous emission property ofΛ-type three-level atom driven by the bichromatic field in the anisotropic double-band photonic crystal is calculated by n-times iteration method.The influence of different parameters on atomic spontaneous emission is studied,and the phenomena of atomic spontaneous emission are explained in the dressed state representation.It is found that the spontaneous emission spectra of the atom driven by the bichromatic field presents a multi-peak comb structure.The position of the emission peak is determined by the initial state of the atom,and the interval between the neighboring emission peaks is the detuningδof the bichromatic field.When the ratio between Rabi frequency intensity and the detuningδof the bichromatic field remains unchanged,the intensity of each emitted peak remains invariant.The spontaneously emitted peak can be annihilated in the band gap and enhanced near the band edge in the anisotropic photonic crystals.Meanwhile,we also observe the fluorescence quenching phenomenon in the spontaneous emission spectra.The research in this paper provides the theoretical guidance for the control of atomic spontaneous emission.展开更多
We theoretically investigate the optical properties of an ultra-thin InN layer embedded in InGaN matrix for light emitters. The peak emission wavelength extends from ultraviolet （374 nm） to green （536 nm） with InN...We theoretically investigate the optical properties of an ultra-thin InN layer embedded in InGaN matrix for light emitters. The peak emission wavelength extends from ultraviolet （374 nm） to green （536 nm） with InN quantum well thickness increasing from 1 monolayer to 2 monolayers, while the overlap of electron–hole wave function remains at a high level （larger than 90%）. Increase of In content in InGaN matrix provides a better approach to longer wavelength emission, which only reduces the spontaneous emission rate slightly compared with the case of increasing In content of the conventional InGaN quantum well. Also, the transparency carrier density derived from gain spectrum is of the same order as that in the conventional blue laser diode. Our study provides skillful design on the development of novel structure InN-based light emitting diodes as well as laser diodes.展开更多
基金Project supported by the Natural Science Foundation of Jilin Province of China(Grant No.20220101031JC)。
文摘The spontaneous emission property ofΛ-type three-level atom driven by the bichromatic field in the anisotropic double-band photonic crystal is calculated by n-times iteration method.The influence of different parameters on atomic spontaneous emission is studied,and the phenomena of atomic spontaneous emission are explained in the dressed state representation.It is found that the spontaneous emission spectra of the atom driven by the bichromatic field presents a multi-peak comb structure.The position of the emission peak is determined by the initial state of the atom,and the interval between the neighboring emission peaks is the detuningδof the bichromatic field.When the ratio between Rabi frequency intensity and the detuningδof the bichromatic field remains unchanged,the intensity of each emitted peak remains invariant.The spontaneously emitted peak can be annihilated in the band gap and enhanced near the band edge in the anisotropic photonic crystals.Meanwhile,we also observe the fluorescence quenching phenomenon in the spontaneous emission spectra.The research in this paper provides the theoretical guidance for the control of atomic spontaneous emission.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61076013, 51272008, and 51102003)the National Basic Research Program of China (Grant No. 2012CB619304)+1 种基金the Beijing Municipal Science & Technology Commission (Grant No. D111100001711002)the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20100001120014)
文摘We theoretically investigate the optical properties of an ultra-thin InN layer embedded in InGaN matrix for light emitters. The peak emission wavelength extends from ultraviolet （374 nm） to green （536 nm） with InN quantum well thickness increasing from 1 monolayer to 2 monolayers, while the overlap of electron–hole wave function remains at a high level （larger than 90%）. Increase of In content in InGaN matrix provides a better approach to longer wavelength emission, which only reduces the spontaneous emission rate slightly compared with the case of increasing In content of the conventional InGaN quantum well. Also, the transparency carrier density derived from gain spectrum is of the same order as that in the conventional blue laser diode. Our study provides skillful design on the development of novel structure InN-based light emitting diodes as well as laser diodes.
