Effect of the Sputtering Parameters on the Structure and Properties of Cu_3N Thin Film Materials

Copper nitride （Cu3N） thin films were successfully deposited on glass substrates by reactive radio frequency magnetron sputtering.The effects of sputtering parameters on the structure and properties of the films were studied.The experimental results show that with increasing of RF power and nitrogen partial pressure,the preferential crystalline orientation of Cu3N film is changed from （111） to （100）.With increasing of substrate temperature from 70 ℃ to 200 ℃,the film phase is changed from Cu3N phase to Cu.With increasing sputtering power from 80 W to 120 W,the optical energy decreases from 1.85 eV to 1.41 eV while the electrical resistivity increases from 1.45 ×102 Ω·cm to 2.99×103 Ω·cm,respectively.

Structural,Wettability and Optical Investigation of Titanium Oxynitride Coatings:Effect of Various Sputtering Parameters

The objective of the present work is to investigate the effect of various sputtering parameters such as nitrogen flow rate, deposition time and sputtering pressure on structural, wettability and optical properties of titanium oxynitride films deposited on glass substrate by reactive magnetron sputtering. The X-ray diffraction graphs of titanium oxynitride films show evolution of various textures of TiO=N and TiN phases with increasing nitrogen flow rate and deposition time, but an increase in sputtering pressure from 4.0 to 8.0 Pa results in decline of various textures observed for TiO=Ny and TiN phases. The stress and strain calculated by sin2~ method are compressive, which decrease with increasing nitrogen flow rate from 55 to I00 sccm （standard cubic centimeter per minute） and increase with increasing deposition time from 80 to I40 min due to atomic penning effect and increasing thickness of the deposited films. The titanium oxynitride films have contact angle values above 90 deg., indicating that films are hydrophobic. The maximum contact angle of I09.1 deg. is observed at deposition time of 140 min. This water repellent property can add value to potential protective, wear and corrosion resistant application of titanium oxynitride films. The band gap decreases from 1.98 to 1.83 eV as nitrogen flow rate is increased from 55 to 100 sccm; it decreases from 1.93 to 1.79 eV as deposition time is increased from 80 to 140 min as more nitrogen incorporation results in higher negative potential of valence band N2p orbital. But it increases from 2.26 to 2.34 eV for titanium oxynitride films as sputtering pressure increases from 4.0 to 8.0 Pa.

Sputtering Preparation and Magneto-optical Properties of GdTbFeCo Thin Films

Amorphous GdTbFeCo magnetic thin films were successfully prepared on glass substrates by RF magnetron sputtering system from a mosaic target. The influences of sputtering parameters on the magneto- optical properties GdTbFeCo thin film were investigated by the variable control method. And the influence mechanism was analyzed in detail. After the sputtering parameters were optimized, it was found that when the distance between target and substrate was 72 ram, the thin film thickness was 120 nm, and the sputtering power, sputtering pressure and sputtering time was 75 W, 0.5 Pa and 613 s, respectively, the coercivity with perpendicular anisotropy could be as high as 6735 Oe, and the squareness ratio of the hysteresis loop was almost equal to 1.

Deposition and characterization for high-quality Ti-Ni-Cu thin films with higher Cu content

In order to attain high-quality Ti-Ni-Cu film,the surface morphologies,chemical compositions and mechanical properties of Ti-Ni-Cu thin films prepared by direct current(DC)magnetron sputtering at various processes were characterized by scanning electron microscopy(SEM),X-ray diffractometer(XRD)and tensile tests.The type of substrates,Ar pressure and sputtering power had significant effects on the quality and chemical composition of Ti-Ni-Cu thin film.Compared with Si and SiO_(2) slides,it was easier to obtain freestanding films by adopting glass or piezoid slide as substrates.The Ti-Ni-Cu thin film deposited at lower pressure(0.10 Pa)had a better density.The surface was featured with porous structure in the Ti-Ni-Cu thin film prepared by higher Ar pressure of 0.36 Pa.In addition,both the tensile strength and strain of annealed Ti-Ni-Cu thin film continuously increased with Ar pressure decreasing.Higher density contributed to the superior mechanical properties.The deposition rate firstly increased and then decreased with Ar pressure and sputtering power increasing.The composition of deposited Ti-Ni-Cu film can be tailored by changing sputter power.The deposited Ti-Ni-Cu thin films at different processing parameters were in amorphous state.In short,the present study offered the important theoretical basis for the preparation of Ti-Ni-Cu thin film with higher quality and performance.