Transparent conductive aluminum doped zinc oxide（ZnO：Al,AZO） films were prepared on glass substrates by rf（radio frequency） magnetron sputtering from ZnO： 3wt% Al_2O_3 ceramic target. The effect of argon gas pre...Transparent conductive aluminum doped zinc oxide（ZnO：Al,AZO） films were prepared on glass substrates by rf（radio frequency） magnetron sputtering from ZnO： 3wt% Al_2O_3 ceramic target. The effect of argon gas pressure（PAr） was investigated with small variations to understand the influence on the electrical, optical and structural properties of the films. Structural examinations using X-ray diffraction（XRD） and scanning electron microscopy（SEM） showed that the ZnO：Al thin films were（002） oriented. The resistivity values were measured by four-point probe with the lowest resistivity of 5.76×10^（-4） Ω？cm（sheet resistance=9.6 Ω/sq. for a thickness=600 nm） obtained at the PAr of 0.3 Pa. The transmittance was achieved from ultravioletvisible（UV-VIS） spectrophotometer, 84% higher than that in the visible region for all AZO thin films. The properties of deposited thin films showed a significant dependence on the PAr.展开更多
Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared on water-cooled glass substrate by radio frequency magnetron sputtering at ...Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared on water-cooled glass substrate by radio frequency magnetron sputtering at room temperature. The Ar sputtering pressure was varied from 0.5 to 3 Pa. The crystallinity increases and the electrical resistivity decreases when the sputtering pressure increases from 0.5 to 2.5 Pa. The cystallinity decreases and the electrical resistivity increases when the sputtering pressure increases from 2.5 to 3 Pa. When the sputtering pressure is 2.5 Pa, it is obtained that the lowest resistivity is 2.03 x 10^-3Ω .cm with a very high transmittance of above 94%. The deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate.展开更多
基金Funded by the Key Projects in the National Science&Technology Pillar Program during the Twelfth Five-year Plan Period(No.2011BAJ04B04)
文摘Transparent conductive aluminum doped zinc oxide（ZnO：Al,AZO） films were prepared on glass substrates by rf（radio frequency） magnetron sputtering from ZnO： 3wt% Al_2O_3 ceramic target. The effect of argon gas pressure（PAr） was investigated with small variations to understand the influence on the electrical, optical and structural properties of the films. Structural examinations using X-ray diffraction（XRD） and scanning electron microscopy（SEM） showed that the ZnO：Al thin films were（002） oriented. The resistivity values were measured by four-point probe with the lowest resistivity of 5.76×10^（-4） Ω？cm（sheet resistance=9.6 Ω/sq. for a thickness=600 nm） obtained at the PAr of 0.3 Pa. The transmittance was achieved from ultravioletvisible（UV-VIS） spectrophotometer, 84% higher than that in the visible region for all AZO thin films. The properties of deposited thin films showed a significant dependence on the PAr.
文摘Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared on water-cooled glass substrate by radio frequency magnetron sputtering at room temperature. The Ar sputtering pressure was varied from 0.5 to 3 Pa. The crystallinity increases and the electrical resistivity decreases when the sputtering pressure increases from 0.5 to 2.5 Pa. The cystallinity decreases and the electrical resistivity increases when the sputtering pressure increases from 2.5 to 3 Pa. When the sputtering pressure is 2.5 Pa, it is obtained that the lowest resistivity is 2.03 x 10^-3Ω .cm with a very high transmittance of above 94%. The deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate.
