The effect of ultrathin Fe layer on perpendicular magnetic anisotropy(PMA) in magnetron-sputtered Co/Pt multilayers was investigated by magnetic measurements.Magnetization hysteresis(M-H) loops and microstructures of ...The effect of ultrathin Fe layer on perpendicular magnetic anisotropy(PMA) in magnetron-sputtered Co/Pt multilayers was investigated by magnetic measurements.Magnetization hysteresis(M-H) loops and microstructures of the samples were measured by vibrating sample magnetometer(VSM) and X-ray diffraction(XRD) and highresolution transmission electron microscopy(HRTEM),respectively.It is found that the PMA is strongly dependent on the interface where Fe layer was doped.When Fe layer was doped at Co/Pt interface where Pt was deposited on Co,the PMA decreases monotonically with Fe layer thickness(tFe) increasing.However,when Fe layer was doped at Pt/Co interface where Co was deposited on Pt,the PMA shows a peak at t_(Fe)=0.1 nm.It is considered that the PMA variation is mainly due to the tuning in the electron occupation states of 3 d orbits at Fe-doped Pt/Co interface.Furthermore,the annealing stability of PMA can also be improved when Fe layer was doped at Pt/Co interface.HRTEM results demonstrate that the magnetic anisotropy evolution is mainly caused by anneal-induced interdiffusion.展开更多
Physical property variation in dopant-free ZnO films was investigated. Film annealing under various environments（O_2, in-Air, N2 and vacuum） resulted in better crystallinity than in the as-grown film. In particular,...Physical property variation in dopant-free ZnO films was investigated. Film annealing under various environments（O_2, in-Air, N2 and vacuum） resulted in better crystallinity than in the as-grown film. In particular, the film annealed under the N_2 environment showed better crystallinity and electrical properties than films annealed in other environments. Based on spectroscopic analysis, we found a correlation between physical（structural, electrical） and chemical properties： The crystallinity of ZnO films is closely related to ZnO bonding, whereas carrier concentration is associated with VO（oxygen vacancy）.展开更多
基金financially supported by the National Natural Science Foundation of China (Nos.51371027 and 51331002)the National Key Scientific Research Projects of China (No.2015CB921502)the Ph.D.Programs Foundation of Ministry of Education (No.20120006130002)。
文摘The effect of ultrathin Fe layer on perpendicular magnetic anisotropy(PMA) in magnetron-sputtered Co/Pt multilayers was investigated by magnetic measurements.Magnetization hysteresis(M-H) loops and microstructures of the samples were measured by vibrating sample magnetometer(VSM) and X-ray diffraction(XRD) and highresolution transmission electron microscopy(HRTEM),respectively.It is found that the PMA is strongly dependent on the interface where Fe layer was doped.When Fe layer was doped at Co/Pt interface where Pt was deposited on Co,the PMA decreases monotonically with Fe layer thickness(tFe) increasing.However,when Fe layer was doped at Pt/Co interface where Co was deposited on Pt,the PMA shows a peak at t_(Fe)=0.1 nm.It is considered that the PMA variation is mainly due to the tuning in the electron occupation states of 3 d orbits at Fe-doped Pt/Co interface.Furthermore,the annealing stability of PMA can also be improved when Fe layer was doped at Pt/Co interface.HRTEM results demonstrate that the magnetic anisotropy evolution is mainly caused by anneal-induced interdiffusion.
基金supported in part by NRF Korea (No. NRF2015R1D1A1A01058672)Korea Atomic Energy Research Institutesupported by the GPF Program (No. 2015H1A2A1034200) of NRF
文摘Physical property variation in dopant-free ZnO films was investigated. Film annealing under various environments（O_2, in-Air, N2 and vacuum） resulted in better crystallinity than in the as-grown film. In particular, the film annealed under the N_2 environment showed better crystallinity and electrical properties than films annealed in other environments. Based on spectroscopic analysis, we found a correlation between physical（structural, electrical） and chemical properties： The crystallinity of ZnO films is closely related to ZnO bonding, whereas carrier concentration is associated with VO（oxygen vacancy）.
