Analytical models for evaluating buoyancy-driven ventilation due to stack effect in a shaft considering heat transfer from shaft interior boundaries

Stack effect is a dominant driving force for building natural ventilation.Analytical models were developed for the evaluation of stack effect in a shaft,accounting for the heat transfer from shaft interior boundaries.Both the conditions with constant heat flux from boundaries to the airflow and the ones with constant boundary temperature were considered.The prediction capabilities of these analytical models were evaluated by using large eddy simulation(LES) for a hypothetical shaft.The results show that there are fairly good agreements between the predictions of the analytical models and the LES predictions in mass flow rate,vertical temperatures profile and pressure difference as well.Both the results of analytical models and LES show that the neutral plane could locate higher than one half of the shaft height when the upper opening area is identical with the lower opening area.Further,it is also shown that the analytical models perform better than KLOTE's model does in the mass flow rate prediction.

A simple plume model induced by stack effect in a vertical shaft

After comparing the mechanism of tilted plume under stack effect with that of spill plume,the tilted plume model induced by stack effect in a vertical shaft is developed simply based on the theoretical results and a series of full-scale tests. It is shown that the two sides of plume are symmetrical and have an accordant regulation that the plume radius has a linear relation to the height z. The profile of fire plume under stack effect is similar to the windblown flame in wind tunnel,and the range of flame deflection angle is about from 50 to 60 degree.

Study on Stack Effect of Stairwell by Numerical Model of Leakage Flow through Gap of Door

Since stack effect that occurs in high-rise buildings has an effect on the indoor environment of the buildings, energy loss and smoke control in case of a fire, there is a need to conduct research on this. For an analysis of the stack effect, analysis methods on the leakage flow through gap of interior door shall be formulated. Until now, studies related to the gap leakage flow in buildings have mainly analyzed flow field and pressure in the buildings one-dimensionally using pressure difference-leakage flowrate relations of Orifice Equation and a network numerical analysis algorithm that as- sumes each compartment in the buildings as a single point. In this study, the Momentum Loss Model which enables pressure drop to be proportional to the flow velocity through the gap of door in computational domain of 3-dimensional numerical analysis was proposed to reflect the gap flow phenomenon effectively in 3-dimensional numerical analysis. Using the proposed model, 3-dimensional numerical analysis of the stack effect on the stairs in buildings was performed, and the effects of separation door and lobby between stair and accommodation on the stack effect were investigated.

Leakage Current Estimation of CMOS Circuit with Stack Effect

Leakage current of CMOS circuit increases dramatically with the technologyscaling down and has become a critical issue of high performance system. Subthreshold, gate andreverse biased junction band-to-band tunneling (BTBT) leakages are considered three maindeterminants of total leakage current. Up to now, how to accurately estimate leakage current oflarge-scale circuits within endurable time remains unsolved, even though accurate leakage modelshave been widely discussed. In this paper, the authors first dip into the stack effect of CMOStechnology and propose a new simple gate-level leakage current model. Then, a table-lookup basedtotal leakage current simulator is built up according to the model. To validate the simulator,accurate leakage current is simulated at circuit level using popular simulator HSPICE forcomparison. Some further studies such as maximum leakage current estimation, minimum leakage currentgeneration and a high-level average leakage current macromodel are introduced in detail.Experiments on ISCAS85 and ISCAS89 benchmarks demonstrate that the two proposed leakage currentestimation methods are very accurate and efficient.

STUDY ON THE STABILITY AND STACKING INTERACTION EFFECT OF THE TERNARY M(Ⅱ)(ATP)AND PYRIDINE-LIKE LIGANDS

The stabilities of the complexes of three pyridine-like ligands with M(II)(ATP)^(2-) and M(II)(M=Ni,Co)were studied by spectrophotometry and by comparing the stability constants of the ternary complexes with these of the binary complexes.A stacking interaction between the pyridine ring and the purine ring of ATP is indicated.The general existence of the stacking interaction encourages us to interpret the antitumor mechanism of a new class of antitumor drugs.

基于改进Stacking集成学习方法的武器装备体系作战效能预测

作战效能预测对武器装备体系从建设、生产到实战的全过程都具有重要意义。在Stacking集成学习模型的基础上,优化模型对数据的交叉验证方式,针对原有模型次级学习器输入向量较为稀疏的问题,为次级学习层的输入增加多项式特征和经主成分分析法降维后的各项作战仿真数据指标(原始数据),形成一种改进Stacking集成学习模型的装备体系作战效能预测方法。以合成营攻占某一阵地的作战效能预测为例,验证该方法的有效性。

Oxygen Scavenging Effect of LaLuO_3/TiN Gate Stack in High-Mobility Si/SiGe/SOI Quantum-Well Transistors

Higher-s dielectric LaLuO3, deposited by molecular beam deposition, with TiN as gate stack is integrated into high-mobility Si/SiGe/SOI quantum-well p-type metal-oxide-semiconduetor field effect transistors. Threshold voltage shift and capacitance equivalent thickness shrink are observed, resulting from oxygen scavenging effect in LaLuO3 with ti-rich TiN after high temperature annealing. The mechanism of oxygen scavenging and its potential for resistive memory applications are analyzed and discussed.

Stacked lateral double-diffused metal–oxide–semiconductor field effect transistor with enhanced depletion effect by surface substrate

A stacked lateral double-diffused metal–oxide–semiconductor field-effect transistor(LDMOS) with enhanced depletion effect by surface substrate is proposed(ST-LDMOS), which is compatible with the traditional CMOS processes. The new stacked structure is characterized by double substrates and surface dielectric trenches(SDT). The drift region is separated by the P-buried layer to form two vertically parallel devices. The doping concentration of the drift region is increased benefiting from the enhanced auxiliary depletion effect of the double substrates, leading to a lower specific on-resistance(Ron,sp). Multiple electric field peaks appear at the corners of the SDT, which improves the lateral electric field distribution and the breakdown voltage(BV). Compared to a conventional LDMOS(C-LDMOS), the BV in the ST-LDMOS increases from 259 V to 459 V, an improvement of 77.22%. The Ron,sp decreases from 39.62 m?·cm^2 to 23.24 m?·cm^2 and the Baliga's figure of merit(FOM) of is 9.07 MW/cm^2.

温室效应和烟囱效应在双层呼吸式玻璃幕墙中实际效果验证及定性分析

温室效应对双层呼吸式玻璃幕墙热工性能存在负面影响,烟囱效应的实际效果也没有直观感受。本文对某双层呼吸式玻璃幕墙进行了一次简易热工性能实测,目的是对存在的温室效应和烟囱效应实际效果进行验证,进一步对夏季高温环境下双层呼吸式玻璃幕墙的隔热效果和原理进行定性分析。

路堤下穿对高铁简支梁桥下部结构的侧向效应

本文以新建路堤下穿高铁32m简支梁桥为例,建立Midas GTS三维有限元模型,总结了路堤下穿引发的高铁桥梁下部结构侧向效应特点;研究了考虑墩梁间摩擦力作用的墩顶侧移。结果表明:路堤下穿会引起桩基“弓形”侧向变形和墩顶侧移;桩底嵌固区段附加剪力和附加弯矩较大;桩顶区段附加弯矩较大;墩梁间摩擦会限制墩顶侧移,实际工程中宜在高铁桥梁上部结构架设完成后进行路堤下穿施工。

Predicting air pressure in drainage stack of high-rise building

It is necessary to understand the features of air pressure in a drainage stack of a high-rise building for properly designing and operating a drainage system. This paper presents a mathematical model for predicting the stack performance. A step function is used to describe the effect of the air entrainment caused by the water discharged from branch pipes. An additional source term is introduced to reflect the gas-liquid interphase interaction （GLII） and stack base effect. The drainage stack is divided into upper and base parts. The air pressure in the upper part is predicted by a total variation diminishing （TVD） scheme, while in the base part, it is predicted by a characteristic line method （CLM）. The predicted results are compared with the data measured in a real-scale high- rise test building. It is found that the additional source term in the present model is effective. It intensively influences the air pressure distribution in the stack. The air pressure is also sensitive to the velocity-adjusting parameter （VAP）, the branch pipe air entrainment, and the conditions on the stack bottom.

An Improved SOI CMOS Technology Based Circuit Technique for Effective Reduction of Standby Subthreshold Leakage

Silicon-on-insulator (SOI) CMOS technology is a very attractive option for implementing digital integrated circuits for low power applications. This paper presents migration of standby subthreshold leakage control technique from a bulk CMOS to SOI CMOS technology. An improved SOI CMOS technology based circuit technique for effective reduction of standby subthreshold leakage power dissipation is proposed in this paper. The proposed technique is validated through design and simulation of a one-bit full adder circuit at a temperature of 27℃, supply voltage, VDD of 0.90 V in 120 nm SOI CMOS technology. Existing standby subthreshold leakage control techniques in CMOS bulk technology are compared with the proposed technique in SOI CMOS technology. Both the proposed and existing techniques are also implemented in SOI CMOS technology and compared. Reduction in standby subthreshold leakage power dissipation by reduction factors of 54x and 45x foraone-bit full adder circuit was achieved using our proposed SOI CMOS technology based circuit technique in comparison with existing techniques such as MTCMOS technique and SCCMOS technique respectively in CMOS bulk technology. Dynamic power dissipation was also reduced significantly by using this proposed SOI CMOS technology based circuit technique. Standby subthreshold leakage power dissipation and dynamic power dissipation were also reduced significantly using the proposed circuit technique in comparison with other existing techniques, when all circuit techniques were implemented in SOI CMOS technology. All simulations were performed using Microwindver 3.1 EDA tool.

Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology

In this paper, the effect of floating body effect （FBE） on a single event transient generation mechanism in fully depleted （FD） silicon-on-insulator （SOI） technology is investigated using three-dimensional technology computer-aided design （3D- TCAD） numerical simulation. The results indicate that the main SET generation mechanism is not carder drift/diffusion but floating body effect （FBE） whether for positive or negative channel metal oxide semiconductor （PMOS or NMOS）. Two stacking layout designs mitigating FBE are investigated as well, and the results indicate that the in-line stacking （IS） layout can mitigate FBE completely and is area penalty saving compared with the conventional stacking layout.

基于红外焦平面读出电路应用的多层stack电容设计及SPICE模型研究

基于0.5μm CMOS工艺设计并制备了一种应用于红外焦平面读出电路的多层堆叠(stack)电容结构,测试结果表明,相比单一形式电容,stack电容的单位面积值增大两倍以上,因而能够有效地提升红外焦平面读出电路的电荷存储能力。此外,本文还为设计的多层stack电容建立了一套描述其电学特性的SPICE模型,模型均方根误差在2%以内,因此可以准确描述stack电容的电学特性,满足了红外焦平面读出电路的仿真设计要求。

Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs

Based on the exact resultant solution of two-dimensional Poisson＇s equation, the novel two-dimensional models, which include surface potential, threshold voltage, subthreshold current and subthreshold swing, have been developed for gate stack symmetrical double-gate strained-Si MOSFETs. The models are verified by numerical simulation. Besides offering the physical insight into device physics, the model provides the basic designing guidance of further immunity of short channel effect of complementary metal-oxide-semiconductor （CMOS）-based device in a nanoscale regime.

A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack(TMGS) DG-MOSFET

In the present work, a two-dimensional（2D） analytical framework of triple material symmetrical gate stack（TMGS）DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along with triple material gate having different work functions and symmetrical gate stack structure, showcases substantial betterment in quashing short channel effects to a good extent. The device functioning amends in terms of improved exemption to threshold voltage roll-off, thereby suppressing the short channel effects. The encroachments of respective device arguments on the threshold voltage of the proposed structure are examined in detail. The significant outcomes are compared with the numerical simulation data obtained by using 2D ATLAS;device simulator to affirm and formalize the proposed device structure.

THE FAILURE MECHANISM OF REVERSE SHAPE MEMORYEFFECT IN A Cu-BASE ALLOY

The interior structural evolution accompanying reverse shape memory effect (RSMEin a Cu-Zn-Al alloy was studied by means of transmission electron microscopy. It was found that RSME is closely related to bainitic transformation in this alloy during the isothermal reaction at moderate temperatures. At a given temperature and a certain external constraint stress, the shape memory effect depends mainly on the aging time.During the early stage, the shape memory effect enhances with the increase of reactiotn time. Then it will decrease gradually apon further aging. If the alloy is overaged, the stacking faults of bainite will disappear gradually by the motion of partial dislocations through which long range diffusion of solute atoms takes place, giving rise to the deterioration of RSME. When all the bainite transforms to α phase, RSME will lose completely.

基于堆叠算法的代码混淆有效性评估模型

为解决代码混淆算法有效性评估模型存在评价指标不全面、单一学习器泛化能力低的问题,提出一种融合自适应增强训练机制和Stacking算法的代码混淆算法有效性评估模型SDF-Stacking。构建一个包括强度、弹性、开销、隐蔽性4大特征的代码混淆有效性评价指标集合;在模型的基分类器训练阶段引入自适应增强训练机制,提高基分类器的预测精度和多样性;使用最大互信息算法做数据融合,增大元分类器训练数据信息量。实验结果表明,该模型在多个评价指标上均优于其它对比模型,准确率可达98.6%。

烟囱效应作用下火灾烟气蔓延规律模拟

为研究高层建筑火灾烟囱效应产生后的烟气蔓延规律,基于FDS火灾模拟软件,以某高层建筑为例,对比分析了4种不同横截面尺寸竖井烟气蔓延特性,引入竖井无量纲长径比判断烟囱效应明显与否,研究了烟囱效应的产生特征及其烟气蔓延规律,分析了建筑中性面之上楼层的温度、CO体积分数和能见度变化。结果表明:无量纲长径比在8左右时竖井内烟气流速发生突变,竖井内大部分区域烟气流速达到6 m/s,产生明显的烟囱效应;中性面以上的楼层受烟气危害远大于中性面以下,且烟气在中性面以上的水平蔓延速度随层高增加而不断加快;随着火势发展,中性面之上疏散走道温度均超过了安全疏散的临界温度60℃,距离火源越远的楼层CO体积分数达到临界值的速度越快。研究为高层建筑火灾的防排烟设计和人员疏散条件的确定提供了理论依据。

基于叠加效应的拉瓦尔喷管结构参数优化设计分析

采用基于CFD-DEM耦合的数值模拟方法对拉瓦尔喷管进行结构优化分析,并利用基于四因素、三水平的正交试验法探讨了结构参数对拉瓦尔喷射器出口气压的影响。结果表明:基于叠加效应的喷射器有利于粉体被吸入喷射器;拉瓦尔喷管喉管越长、管径越窄,收缩管的锥角越小,扩张管的锥角越小,都将造成喷射器出口压力增大;拉瓦尔管的出口压力受喉管长度影响最大,其次是喉管管径,再次是收缩管的锥角,最后是扩张管的锥角;通过增加一级拉瓦尔喷管以及增加喉管长度,可以提高进料的流畅性,同时有助于粉料更远距离的输送。