In this work, diamond-like carbon （DLC） films were deposited on stainless steel substrates with Si/SiC intermediate layers by combining plasma enhanced sputtering physical vapour deposition （PEUMS-PVD） and microwa...In this work, diamond-like carbon （DLC） films were deposited on stainless steel substrates with Si/SiC intermediate layers by combining plasma enhanced sputtering physical vapour deposition （PEUMS-PVD） and microwave electron cyclotron resonance plasma enhanced chemical vapour deposition （MW-ECRPECVD） techniques. The influence of substrate negative self-bias voltage and Si target power on the structure and nano-mechanical behaviour of the DLC films were investigated by Raman spectroscopy, nano-indentation, and the film structural morphology by atomic force microscopy （AFM）. With the increase of deposition bias voltage, the G band shifted to higher wave-number and the integrated intensity ratio ID/IG increased. We considered these as evidences for the development of graphitization in the films. As the substrate negative self-bias voltage increased, particle bombardment function was enhanced and the sp^3-bond carbon density reducing, resulted in the peak values of hardness （H） and elastic modulus （E）. Silicon addition promoted the formation of sp^3 bonding and reduced the hardness. The incorporated Si atoms substituted sp^2- bond carbon atoms in ring structures, which promoted the formation of sp^3-bond. The structural transition from C-C to C-Si bonds resulted in relaxation of the residual stress which led to the decrease of internal stress and hardness. The results of AFM indicated that the films was dense and homogeneous, the roughness of the films was decreased due to the increase of substrate negative self-bias voltage and the Si target power.展开更多
Diamond-like carbon （DLC） films was deposited successfully on stainless steel sub- strates with Si/SiC intermediate layers by combining plasma enhanced unbalanced magnetron sputtering physical vapor deposition （PEU...Diamond-like carbon （DLC） films was deposited successfully on stainless steel sub- strates with Si/SiC intermediate layers by combining plasma enhanced unbalanced magnetron sputtering physical vapor deposition （PEUMS-PVD） and microwave electron cyclotron resonance plasma enhanced chemical vapor deposition （MW-ECR PECVD） techniques. The effect of sil- icon dopant on the structure, morphology, nanomechanical properties and electrochemical be- havior of DLC films were investigated by Raman spectroscopy, nano-indentation, atomic force microscopy （AFM） and potentiodynamic method and electrochemical impedance spectroscopy （EIS）. It showed that the incorporated silicon atoms substituted sp2-bonded carbon atoms in the ring structures, promoting the formation of sp3-bonds. The structural transition from C-C to C-Si bonds resulted in the relaxation of the residual stress, leading to the decrease in films hardness. The DLC films with Si/SiC intermediate layers led to significant improvement in the corrosion resistance of the stainless steel substrate due to effective isolation and good chemical inertness of the DLC films.展开更多
文摘In this work, diamond-like carbon （DLC） films were deposited on stainless steel substrates with Si/SiC intermediate layers by combining plasma enhanced sputtering physical vapour deposition （PEUMS-PVD） and microwave electron cyclotron resonance plasma enhanced chemical vapour deposition （MW-ECRPECVD） techniques. The influence of substrate negative self-bias voltage and Si target power on the structure and nano-mechanical behaviour of the DLC films were investigated by Raman spectroscopy, nano-indentation, and the film structural morphology by atomic force microscopy （AFM）. With the increase of deposition bias voltage, the G band shifted to higher wave-number and the integrated intensity ratio ID/IG increased. We considered these as evidences for the development of graphitization in the films. As the substrate negative self-bias voltage increased, particle bombardment function was enhanced and the sp^3-bond carbon density reducing, resulted in the peak values of hardness （H） and elastic modulus （E）. Silicon addition promoted the formation of sp^3 bonding and reduced the hardness. The incorporated Si atoms substituted sp^2- bond carbon atoms in ring structures, which promoted the formation of sp^3-bond. The structural transition from C-C to C-Si bonds resulted in relaxation of the residual stress which led to the decrease of internal stress and hardness. The results of AFM indicated that the films was dense and homogeneous, the roughness of the films was decreased due to the increase of substrate negative self-bias voltage and the Si target power.
文摘Diamond-like carbon （DLC） films was deposited successfully on stainless steel sub- strates with Si/SiC intermediate layers by combining plasma enhanced unbalanced magnetron sputtering physical vapor deposition （PEUMS-PVD） and microwave electron cyclotron resonance plasma enhanced chemical vapor deposition （MW-ECR PECVD） techniques. The effect of sil- icon dopant on the structure, morphology, nanomechanical properties and electrochemical be- havior of DLC films were investigated by Raman spectroscopy, nano-indentation, atomic force microscopy （AFM） and potentiodynamic method and electrochemical impedance spectroscopy （EIS）. It showed that the incorporated silicon atoms substituted sp2-bonded carbon atoms in the ring structures, promoting the formation of sp3-bonds. The structural transition from C-C to C-Si bonds resulted in the relaxation of the residual stress, leading to the decrease in films hardness. The DLC films with Si/SiC intermediate layers led to significant improvement in the corrosion resistance of the stainless steel substrate due to effective isolation and good chemical inertness of the DLC films.
