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Design for manufacturability of a VDSM standard cell library
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作者 周宠 陈岚 +2 位作者 曾健平 尹明会 赵劼 《Journal of Semiconductors》 EI CAS CSCD 2012年第2期143-148,共6页
This paper presents a method of designing a 65 nm DFM standard cell library.By reducing the amount of the library largely,the process of optical proximity correction(OPC) becomes more efficient and the need for larg... This paper presents a method of designing a 65 nm DFM standard cell library.By reducing the amount of the library largely,the process of optical proximity correction(OPC) becomes more efficient and the need for large storage is reduced.This library is more manufacture-friendly as each cell has been optimized according to the DFM rule and optical simulation.The area penalty is minor compared with traditional library,and the timing,as well as power has a good performance.Furthermore,this library has passed the test from the Technology Design Department of Foundry.The result shows this DFM standard cell library has advantages that improve the yield. 展开更多
关键词 design for manufacturability reduced standard cell library layout optimization optical simulation YIELD
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Analysis of single event transient pulse-width in 65 nm commercial radiation-hardened logic cell 被引量:1
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作者 Haisong Li Longsheng Wu +1 位作者 Bo Yang Yihu Jiang 《Journal of Semiconductors》 EI CAS CSCD 2017年第8期100-104,共5页
With the critical charge reduced to generate a single event effect (SEE) and high working frequency for a nanometer integrated circuit, the single event effect (SET) becomes increasingly serious for high performan... With the critical charge reduced to generate a single event effect (SEE) and high working frequency for a nanometer integrated circuit, the single event effect (SET) becomes increasingly serious for high performance SOC and DSP chips. To analyze the radiation-hardened method of SET for the nanometer integrated circuit, the n+ guard ring and p+ guard ring have been adopted in the layout for a 65 nm commercial radiation-hardened standard cell library. The weakest driving capacity inverter cell was used to evaluate the single event transient (SET) pulse-width distribution. We employed a dual-lane measurement circuit to get more accurate SET's pulse- width. Six kinds of ions, which provide LETs of 12.5, 22.5, 32.5, 42, 63, and 79.5 MeV-cm2/mg, respectively, have been utilized to irradiate the SET test circuit in the Beijing Tandem Accelerator Nuclear Physics National Laboratory. The testing results reveal that the pulse-width of most SETs is shorter than 400 ps in the range of LETefr from 12.5 MeV.cm2/mg to 79.5 MeV-cm2/mg and the pulse-width presents saturation tendency when the effective linear energy transfer (LETeff value is larger than 40 MeV-cm2/mg. The test results also show that the hardened commercial standard cell's pulse-width concentrates on 33 to 264 ps, which decreases by 40% compared to the pulse-width of the 65 nm commercial unhardened standard cell. 展开更多
关键词 single event effect single event transient radiation-hardened guard ring standard cell library PULSEWIDTH
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