This paper presents a new model to study the static performances of a GaN metal epitaxial-semiconductor field effect transistor（MESFET） based on the metal-semiconductor interface state of the Schottky junction.The I...This paper presents a new model to study the static performances of a GaN metal epitaxial-semiconductor field effect transistor（MESFET） based on the metal-semiconductor interface state of the Schottky junction.The I-V performances of MESFET under different channel lengths and different operating systems（pinch-off or not） have been achieved by our model, which strictly depended on the electrical parameters, such as the drain-gate capacity Cgd, the source-gate capacity C;, the transconductance, and the conductance. To determine the accuracy of our model, root-mean-square（RMS） errors were calculated. In the experiment, the experimental data agree with our model. Also, the minimum value of the electrical parameter has been calculated to get the maximum cut-off frequency for the GaN MESFET.展开更多
基金Project supported by the Taiyuan Institute of Technology School Foundation
文摘This paper presents a new model to study the static performances of a GaN metal epitaxial-semiconductor field effect transistor（MESFET） based on the metal-semiconductor interface state of the Schottky junction.The I-V performances of MESFET under different channel lengths and different operating systems（pinch-off or not） have been achieved by our model, which strictly depended on the electrical parameters, such as the drain-gate capacity Cgd, the source-gate capacity C;, the transconductance, and the conductance. To determine the accuracy of our model, root-mean-square（RMS） errors were calculated. In the experiment, the experimental data agree with our model. Also, the minimum value of the electrical parameter has been calculated to get the maximum cut-off frequency for the GaN MESFET.
