Controllable step-flow growth of GaN on patterned freestanding substrate

A new kind of step-flow growth mode is proposed,which adopts sidewall as step source on patterned GaN substrate.The terrace width of steps originated from the sidewall was found to change with the growth temperature and ammonia flux.The growth mechanism is explained and simulated based on step motion model.This work helps better understand the behaviors of step advancement and puts forward a method of precisely modulating atomic steps.

Step-edge-guided nucleation and growth mode transition of α-Ga_(2)O_(3) heteroepitaxy on vicinal sapphire

Controlling the epitaxial growth mode of semiconductor layers is crucial for optimizing material properties and device performance.In this work,the growth mode ofα-Ga_(2)O_(3) heteroepitaxial layers was modulated by tuning miscut angles(θ)from 0°to 7°off the(1010)direction of sapphire(0002)substrate.On flat sapphire surfaces,the growth undergoes a typical three-dimensional(3D)growth mode due to the random nucleation on wide substrate terraces,as evidenced by the hillock morphology and high dislocation densities.As the miscut angle increases toθ=5°,the terrace width of sapphire substrate is comparable to the distance between neighboring nuclei,and consequently,the nucleation is guided by terrace edges,which energetically facilitates the growth mode transition into the desirable two-dimensional(2D)coherent growth.Consequently,the mean surface roughness decreases to only 0.62 nm,accompanied by a significant reduction in screw and edge dislocations to 0.16×10^(7) cm^(-2)and 3.58×10^(9) cm^(-2),respectively.However,the further increment of miscut angles toθ=7°shrink the terrace width less than nucleation distance,and the step-bunching growth mode is dominant.In this circumstance,the misfit strain is released in the initial growth stage,resulting in surface morphology degradation and increased dislocation densities.

Effect of toroidal mode coupling on explosive dynamics of m/n=3/1 double tearing mode

The CLT code was used to quantitatively study the impact of toroidal mode coupling on the explosive dynamics of the m/n=3/1 double tearing mode.The focus of this study was on explosive reconnection processes,in which the energy bursts and the main mode no longer dominates when the separation between two rational surfaces is relatively large in the medium range.The development of higher m and n modes is facilitated by a relatively large separation between two rational surfaces,a small q_(min)(the minimum value of the safety factor),or low resistivity.The relationships between the higher m and n mode development,explosive reconnection rate,and position exchange of 3/1 islands are summarized for the first time.Separation plays a more important role than q_(min)in enhancing the development of higher m and n modes.At a relatively large separation,the good development of higher m and n modes greatly reduces the reconnection rate and suppresses the development of the main mode,resulting in the main mode not being able to develop sufficiently large to generate the position changes of 3/1 islands.

Growth Mode of PTCDA on p-Si Substrates

AFM scanning images of the surface of a PTCDA/p-Si specimen used in an organic/inorganic photodetector show that PTCDA grows in island shapes that are poorly distributed, with each island shaped like a round hillock. The images also show that there exist enormous defects in the PTCDA layer due to pedestal sites and other defects that appear when Si atoms shift transversely, and that the bonding condition is satisfied by the action of atom suspension bonding at the surface of the Si substrate. We infer the growth mode of PTCDA deposited onto p-Si substrates as follows. First,PTCDA molecules assemble at the defects to form three-dimensional island-like PTCDA crystal nuclei, and then by the action of delocalized big π bonding, two adjacent layers of PTCDA molecules overlap to some extent and finally island-like structures form. The PTCDA molecules and Si substrate combine by a process of the combination of benzene rings with Si atoms at the defects and of acid anhydride radicals with Si atoms at the perfect fraction of the surface. In the course of combination, although the structure of the benzene rings does not change, the chemical reaction of acid anhydt＇ide radicals and Si occurs to break off the C=O bond in the acid anhydride, and then C-Si-O and silicon oxide might be produced.

Effects of Different Fertilization Modes on Growth of Cymbidium sinense ‘Qihei'

[Objective] This study was conducted to screen the best fertilization mode for potted Cymbidium sinense ＇Qihei＇. [Method] According to the contents of the N, P and K elements in C. sinense ＇Qihei＇ and the main fertilization modes used by producers and related literature information, the effects of 8 kinds of fertilization models on the growth of C. sinense ＇Qihei＇ were studied. Twenty six morphologic and physiological indexes of C. sinense ＇Qihei＇ growth were measured. [Result] Significant differences were shown on 21 indexes. [Conclusion] Based on the 26 in- dexes, the best fertilization mode included the steps of applying 14-14-14 （N-P20^- K20） slow-release fertilizer particles （8 g per bag） once in April, July and October, respectively; drip-applying 800 times of 30-10-10 water-soluble fertilizer once every half a month from April to September; and drip-applying 800 times of 15-5-30 wa- ter-soluble fertilizer （150 ml） once every half a month from October to December.

The Altun Fault: Its Geometry, Nature and Mode of Growth

The Altun (or Altyn Tagh) fault displays a geometry of overlapping of linear and arcuate segments and shows strong inhomogeneity in time and space. It is a gigantic fault system with complex mechanical behaviours including thrusting, sinistral strike slip and normal slip. The strike slip and normal slip mainly occurred in the Cretaceous—Cenozoic and Plio-Quaternary respectively, whereas the thrusting was a deformation event that has played a dominant role since the late Palaeozoic (for a duration of about 305 Ma). The formation of the Altun fault was related to strong inhomogeneous deformation of the massifs on its two sides (in the hinterland of the Altun Mountains contractional deformation predominated and in the Qilian massif thrust propagation was dominant). The fault experienced a dynamic process of successive break-up and connection of its segments and gradual propagation, which was synchronous with the development of an overstep thrust sequence in the Qilian massif and the uplift of the Qinghai-Tibet plateau. With southward propagation of the thrust sequence and continued uplift of the plateau, the NE tip of the Altun fault moved in a NE direction, while the SW tip grew in a SW direction.

Relationship between the spatial position of the seed and growth mode for single-crystal diamond grown with an enclosed-type holder

The relationship between the spatial position of the diamond seed and growth mode is investigated with an enclosedtype holder for single-crystal diamond growth using the microwave plasma chemical vapor deposition epitaxial method.The results demonstrate that there are three main regions by varying the spatial position of the seed.Due to the plasma concentration occurring at the seed edge,a larger depth is beneficial to transfer the plasma to the holder surface and suppress the polycrystalline diamond rim around the seed edge.However,the plasma density at the edge decreases drastically when the depth is too large,resulting in the growth of a vicinal grain plane and the reduction of surface area.By adopting an appropriate spatial location,the size of single-crystal diamond can be increased from 7 mm×7 mm×0.35 mm to8.6 mm×8.6 mm×2.8 mm without the polycrystalline diamond rim.

Urgency Required in Changing the Growth Mode of China's Foreign Trade

Presently China mainly relies on the low cost of production factors and introducing advanced foreign technology to create an international competitive edge.Thepresent foreign trade growth mode,which is charaterized of quantitative expansion,labor-intensive and low prices,low e ciency,unsustained,is facing lots ofdifficulties.The problems such as the worsening terms of trade,the huge trade surplus,too much dependence on foreign trade,the rising prices of production factors,difficulties in the introduction of high technology,excessive consumption of resources,environmental pressures exacerbated the situations.Therefore,China mustadopt effective measures into a sustained and high efficiency foreign trade growth mode,which is supposed to be described as optimization of export commoditystructure,market diversification,mainly relying on independent innovation and independent brands,promoting trade with science and technology,rationaliztion ofindustrial structure,focusing on high added value.

Development Mode of Mid-small Cities in Northern Jiangsu Based on the Growth Pole Theory

The development mode of mid-small cities in northern Jiangsu is analyzed on the Growth Pole theory.Depending on scales,endowment of resources,geographical positions,and industrial advantages of mil-small cities,we can divide the development mode of those mid-small cities within this context into five types:development through integration into big cities;independent development;resource-dependent development;single industry development;and mixed industry development.

Growth rate of peeling mode in the near separatrix region of diverted tokamak plasma

An analytical expression of the peeling mode in the near separatrix region of diverted tokamak plasma is derived. It is shown that in diverted plasmas both with single and double X points, though the perturbed potential energy of the unstable peeling mode tends to be large, its growth rate becomes very small due to the even larger kinetic energy. Compared to some recent studies that give qualitatively correct results about this growth rate, our result is directly related with the diverted equilibrium quantities suitable for application to realistic experiments.

Principle of Classification of Economic Growth Mode

In this paper, the economic growth factors are classified into two types and three kinds by the growth rate function of Solow. Based on their contribution, the economic growth mode is classified into three types and eight kinds. The case analysis of the classfication of economic growth mode is given. Finally, the paper gives the economic growth function which describes the principle of interaction among economic growth factors.

GROWTH MODE AND MODIFICATION OF GRAPHITE IN CAST IRON MELT

Using liquid quenching technique,the change of growth mode of graphite in cast iron melt was analysed.Based on the interface structure theory of crystal growth,the concept of multiplication of spiral growth steps was advanced and two basic multiplication models were given.It was proposed that multiplication of spiral steps is responsible for the change of growth mode of graphite in cast iron melt.The modifying elements such as Ce promote multiplication of spiral steps,which is regarded as the core of modification.Origination of screw dislocation and branch of the sector blocks in radius direction,both of which are essential to spheroidization of graphite in the melt,are caused by multiplication of spiral steps:and so is thickening of graphite plates.

THE GROWTH MODE OF ALTUN FAULT AND IT'S DYNAMICS

A set of ENE\|trending fault which locates in the rigid Tarim massif and flexible Qilian massif in the same dynamic system of the uplift of the Qinghai—Tibetan plateau is referred to as the Altun Fault (ALF). ALF displays a linear geometry or a geometry of overlapping of linear and arcuate segments and a growth and development process of the breakdown segment\|by\|segment, connection segment\|by\|segment and propagation gradually (northeastward migration of the northeast tip, southwestward growth of the southwest tip). The formation of the Altun fault began in the middle or upper Carboniferous. It was characteristic of the sinistral strike\|slip\|thrust before Eocene, of the thrust\|sinistral strike\|slip during Oligocene—Miocene, and of the normal slip, and thrust\|sinistral strike\|slip simultaneously since Miocene.

Transition of Growth Mode in Homoepitaxy on Metal Surface

The process of the multilayer growth of Pt on Pt(111)is studied by using a Monte Carlo model with realisticphysical parameters.The effects of the substrate temperature,the ES barrier,and the deposition rate on the growthmode have been investigated.Gradual transitions of the surface roughness from oscillatory to non-oscillatory behaviorand then back to oscillatory behavior are observed while increasing the substrate temperature from 270 K to 620 K.Itis found that the growth mode depends strongly on ES barrier over the whole temperatures and the deposition rate ofatoms effectively affects the growth mode.The simulation results are consistent with many experimental observationsfor homoexpitaxy on a Pt(111)substrate.

A shortcut for determining growth mode

Thin and thick films of iron phthalocyanine （FePc） molecules are deposited on a Ag （110） surface. The nature of the FePc growth and the interaction with the substrate have been studied by X-ray photoelectron spectroscopy （XPS）. All of the core level spectra exhibit rigid shifts towards lower binding energies following the deposition of the organic films, each by a different magnitude. A greater change and a larger shift in the Fe2p level as compared to Cls core level reveals that the adsorbate interacts with the substrate mainly via the Fe atom, located at the center of the molecule. An increase/decrease in the intensity of C1 s/Ag3d level is found to be exponentially linked to the overlayer molecular coverage. Finally, the so- called growth/decay curve indicates that FePc thin films initially develop following the FM growth mode and then transform to SK mode, resulting in 3D island aggregation.

Storm-scale ensemble forecast based on breeding of growth modes

How to obtain fast-growth errors, which is comparable to the actual forecast growth error, is a crucial problem in ensemble forecast （EF）. The method, Breeding of Growth Modes （BGM）, which has been used to generate perturbations for medium-range EF at NCEP, simulates the development of fast-growth errors in the analysis cycle, and is a reasonable choice in capturing growing errors modes, especially for extreme weather by BGM. An ideal supercell storm, simulated by Weather Research Forecast model （WRF）, occurred in central Oklahoma on 20 May 1977. This simulation was used to study the application of BGM methods in the meso-scale strong convective Ensemble Prediction System （EPS）. We compared the forecasting skills of EPS by different pertubation methods, like Monte-Carlo and BGM. The results show that the ensemble average forecast based on Monte-Carlo with statistics meaning is superior to the single-deterministic prediction, but a less dynamic process of the method leads to a smaller spread than expected. The fast-growth errors of BGM are comparable to the actual short-range forecast error and a more appropriate ensemble spread. Considering evaluation indexes and scores, the forecast skills of EPS by BGM is higher than Monte-Carlo＇s. Furthermore, various breeding cycles have different effects on precipitation and non-precipitation fields, confirmation of reasonable cycles need consider balance between variables.

Coverage Dependence of Growth Mode in Heteroepitaxy of Ni on Cu(100) Surface

A realistic kinetic Monte Carlo （KMC） simulation model with physical parameters is developed, which well reproduces the heteroepitaxial growth of multilayered Ni thin film on Cu（100） surfaces at room temperature. The effects of mass transport between interlayers and edge diffusion of atoms along the islands are included in the simulation model, and the surface roughness and the layer distribution versus total coverage are calculated. Speeially, the simulation model reveals the transition of growth mode with coverage and the difference between the Ni heteroepitaxy on Cu（100） and the Ni homoepitaxy on Ni（100）. Through comparison of KMC simulation with the real scanning tunneling microscopy （STM） experiments, the Ehrlich-Schwoebel （ES） barrier Ees is estimated to be 0.18±0.02 eV for Ni/Cu（100） system while 0.28 eV for Ni/Ni（100）. The simulation also shows that the growth mode depends strongly on the thickness of thin film and the surface temperature, and the critical thickness of growth mode transition is dependent on the growth condition such as surface temperature and deposition flux as well.

Failure Mode Effects and Criticality Analysis Method of Armored Equipment Based on Testability Growth

In view of the low level testability of armored equipment,the important significance of armored equipment testability growth is discussed in this paper.The failure mode effects and criticality analysis( FMECA) method to realize testability growth is introduced.Centering on the testability growth demands of new armored equipment,the deficiencies of traditional FMECA are analyzed.And an enhanced FMECA( EFMECA) method is proposed.The method increases the analysis contents,combines the information before the failure occurrence and impending failure modes together organically.Then the failure symptoms is analyzed,the failure modes and effects is determined,and the state development trend is predicted.Finally,the application of EFMECA method is illustrated by the example of the failure mode of typical armored equipment engine.

Growth Mode Investigation of 3,4,9,10-perylenetetra-carboxylic Dianhydride on p-Si Substrates by X-ray Photoemission Spectroscopy

The growth mode of 3,4,9,10-perylenetetra-carboxylic dianhydride(PTCDA) deposited on p-Si substrates can be deduced by X-ray Photoemission Spectroscopy(XPS). The spectrum and fine spectrum at the surface of specimen are studied. Firstly, PTCDA molecules assemble at the defects to form lots of three-dimensional island-like PTCDA crystal nucleuses, and then by the action of delocalized big π bond, two adjacent layers of PTCDA molecules overlap to some extent and finally island-like structure forms. PTCDA molecules of benzene ring combine with Si atoms at the defects, and that of acid anhydride radicals combine with Si atoms at the perfect fraction of the surface. In the course of combination, although the structure of benzene ring doesn't change, the chemical reaction of acid anhydride radicals and Si occurs to break off C=O bond in acid anhydride, and then C-Si-O and silicon oxide might be produced.

Logarithmic Growth Algorithm of Sleep Mode of Broadband Mobile Access Terminal

The sleep mode which works upon low arrival traffic is introduced in IEEE802.16e standard to reduce the power consumption of the mobile access terminal. Due to the rapid growth in the sleep interval in the exponential growth algorithm prescribed in IEEE802.16e, the power saving efficiency of the mobile access terminal is limited and the average delay time of receiving data frames is prolonged when the arrival rate of data frames is low. To obtain lower power consumption and shorter average delay time, the l...