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A review of progress on nano-aperture VCSEL Invited Paper
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作者 Sonny Vo James S.Harris 《Chinese Optics Letters》 SCIE EI CAS CSCD 2008年第10期748-754,共7页
This paper reviews the progress on nano-aperture vertical-cavity surface-emitting lasers (VCSELs). The design, fabrication, and polarization control of nano-aperture VCSELs are reviewed. With the nanoaperture evolvi... This paper reviews the progress on nano-aperture vertical-cavity surface-emitting lasers (VCSELs). The design, fabrication, and polarization control of nano-aperture VCSELs are reviewed. With the nanoaperture evolving from conventional circular and square aperture to unique C-shaped, H-shaped, I-shaped, and bowtie-shaped aperture, both the near-field intensity and near-field beam confinement from nanoaperture VCSELs are significantly improved. As a high-intensity compact light source with sub-100- nm spot size, nano-aperture VCSELs are promising to realize many new near-field optical systems and applications. 展开更多
关键词 VCSEL VIEW A review of progress on nano-aperture VCSEL Invited Paper
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Monolithically integrated dual-wavelength photodetector based on a step-shaped Fabry-Prot filter
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作者 范鑫烨 黄永清 +3 位作者 任晓敏 段晓峰 胡服全 王琦 《Chinese Optics Letters》 SCIE EI CAS CSCD 2012年第11期9-12,共4页
A novel long wavelength photodetector with dual-wavelength spectral response is designed and fabricated using a step-shaped Fabry-Perot (F-P) filter structure. The step-shaped GaAs/A1GaAs distributed Bragg reflector... A novel long wavelength photodetector with dual-wavelength spectral response is designed and fabricated using a step-shaped Fabry-Perot (F-P) filter structure. The step-shaped GaAs/A1GaAs distributed Bragg reflectors and the InP PIN photodetector are grown on a GaAs substrate using low pressure metal organic chemical vapor deposition. High quality GaAs/InP heteroepitaxy is realized by employing a thin low temperature buffer layer. The photodetector structure is optimized by theoretical simulation. This device has a dual-peak distance of 19 nm (1558 and 1 577 nm). The 3-dB bandwidth of 16 GHz is simultaneously obtained with peak ouantum efficiencies of 8.5% and 8.6% around 1 .55R and 1 .577 nm respectively 展开更多
关键词 GaAs PIN InP rot filter Monolithically integrated dual-wavelength photodetector based on a step-shaped Fabry-P
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