The electronic structures of (CdSe)n/(ZnSe)m strained-lager soperfattice (SLS) were investigated by the recursion method in the tight-bindiop opproximation. The total,local, and partial density of states were calculat...The electronic structures of (CdSe)n/(ZnSe)m strained-lager soperfattice (SLS) were investigated by the recursion method in the tight-bindiop opproximation. The total,local, and partial density of states were calculated for n=1, m=5.The total density of states (TDOS) for bulk CdSe, ZnSe and n=1, 3, m=1, 3, 5, for SLS were investigated.Fermi energy, the band gap, the valence of an atom, and the ionization potential and the electron affinity were discassed.展开更多
The investigation on optical properties of Si1-xGex/Si strained layer structures has been carried out actively in recent years. The photoluminescence has become a brisker subject in the studies of its various optical ...The investigation on optical properties of Si1-xGex/Si strained layer structures has been carried out actively in recent years. The photoluminescence has become a brisker subject in the studies of its various optical properties. A research development on photoluminescence properties of some new Si1-x Gex/Si strained layer structures is introduced.展开更多
Ⅰ. INTRODUCTION The coulomb interaction between electron and hole has been enhanced in the quasi-two-dimensional (2D)electronic system in quantum well or superlattice structure, especially by the potential confinemen...Ⅰ. INTRODUCTION The coulomb interaction between electron and hole has been enhanced in the quasi-two-dimensional (2D)electronic system in quantum well or superlattice structure, especially by the potential confinement effect along z direction. The exciton binding energy of 2D展开更多
I. INTRODUCTION The wide gap semiconductor superlattioes and quantum wells fabricated by ZnS, ZnSe and ZnTe are expected to be greatly useful in the optoelectronics area in the visible region. 600-700 nm wavelength op...I. INTRODUCTION The wide gap semiconductor superlattioes and quantum wells fabricated by ZnS, ZnSe and ZnTe are expected to be greatly useful in the optoelectronics area in the visible region. 600-700 nm wavelength optoelectronic devices with these structures have attracted much interest for the use in high-density optical information systems.展开更多
文摘The electronic structures of (CdSe)n/(ZnSe)m strained-lager soperfattice (SLS) were investigated by the recursion method in the tight-bindiop opproximation. The total,local, and partial density of states were calculated for n=1, m=5.The total density of states (TDOS) for bulk CdSe, ZnSe and n=1, 3, m=1, 3, 5, for SLS were investigated.Fermi energy, the band gap, the valence of an atom, and the ionization potential and the electron affinity were discassed.
文摘The investigation on optical properties of Si1-xGex/Si strained layer structures has been carried out actively in recent years. The photoluminescence has become a brisker subject in the studies of its various optical properties. A research development on photoluminescence properties of some new Si1-x Gex/Si strained layer structures is introduced.
文摘Ⅰ. INTRODUCTION The coulomb interaction between electron and hole has been enhanced in the quasi-two-dimensional (2D)electronic system in quantum well or superlattice structure, especially by the potential confinement effect along z direction. The exciton binding energy of 2D
文摘I. INTRODUCTION The wide gap semiconductor superlattioes and quantum wells fabricated by ZnS, ZnSe and ZnTe are expected to be greatly useful in the optoelectronics area in the visible region. 600-700 nm wavelength optoelectronic devices with these structures have attracted much interest for the use in high-density optical information systems.
