Based on the exact resultant solution of two-dimensional Poisson＇s equation in strained Si and Si1-xCex layer, a simple and accurate two-dimensional.analytical model including surface channel potential, surface chann...Based on the exact resultant solution of two-dimensional Poisson＇s equation in strained Si and Si1-xCex layer, a simple and accurate two-dimensional.analytical model including surface channel potential, surface channel electric field, threshold voltage and subthreshold swing for fully depleted gate stack strained Si on silicon-germanium-on-insulator （SGOI） MOSFETs has been developed. The results show that this novel structure can suppress the short channel effects （SCE）, the drain-induced barrier-lowering （DIBL） and improve the subthreshold performance in nanoelectronics application. The model is verified by numerical simulation. The model provides the basic designing guidance of gate stack strained Si on SGOI MOSFETs.展开更多
Based on the ultra-thin strained silicon-on-insulator（s SOI） technology, by creatively using a hydrofluoric acid（HF）vapor corrosion system to dry etch the Si O2 layer, a large area of suspended strained silicon（s...Based on the ultra-thin strained silicon-on-insulator（s SOI） technology, by creatively using a hydrofluoric acid（HF）vapor corrosion system to dry etch the Si O2 layer, a large area of suspended strained silicon（s Si） nanomembrane with uniform strain distribution is fabricated. The strain state in the implemented nanomembrane is comprehensively analyzed by using an UV-Raman spectrometer with different laser powers. The results show that the inherent strain is preserved while there are artificial Raman shifts induced by the heat effect, which is proportional to the laser power. The suspended s SOI nanomembrane will be an important material for future novel high-performance devices.展开更多
This paper presents the analytical modeling of subthreshold current and subthreshold swing of short- channel fully-depleted （FD） strained-Si-on-insulator （SSOI） MOSFETs having vertical Gaussian-like doping pro- fi...This paper presents the analytical modeling of subthreshold current and subthreshold swing of short- channel fully-depleted （FD） strained-Si-on-insulator （SSOI） MOSFETs having vertical Gaussian-like doping pro- file in the channel. The subthreshold current and subthreshold swing have been derived using the parabolic approx- imation method. In addition to the effect of strain on silicon layer, various other device parameters such as channel length （L）, gate-oxide thickness （tox）, strained-Si channel thickness （ts_Si）, peak doping concentration （Np）, project range （Rp） and straggle （op） of the Gaussian profile have been considered while predicting the device characteris- tics. The present work may help to overcome the degradation in subthreshold characteristics with strain engineering. These subthreshold current and swing models provide valuable information for strained-Si MOSFET design. Ac- curacy of the proposed models is verified using the commercially available ATLASTM, a two-dimensional （2D） device simulator from SILVACO.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005)the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 200807010010)
文摘Based on the exact resultant solution of two-dimensional Poisson＇s equation in strained Si and Si1-xCex layer, a simple and accurate two-dimensional.analytical model including surface channel potential, surface channel electric field, threshold voltage and subthreshold swing for fully depleted gate stack strained Si on silicon-germanium-on-insulator （SGOI） MOSFETs has been developed. The results show that this novel structure can suppress the short channel effects （SCE）, the drain-induced barrier-lowering （DIBL） and improve the subthreshold performance in nanoelectronics application. The model is verified by numerical simulation. The model provides the basic designing guidance of gate stack strained Si on SGOI MOSFETs.
基金supported by the National Natural Science Foundation of China(Grant Nos.61376117 and 61107025)the Zhejiang Provincial Natural Science Foundation of China(Grant No.LY13F040004)
文摘Based on the ultra-thin strained silicon-on-insulator（s SOI） technology, by creatively using a hydrofluoric acid（HF）vapor corrosion system to dry etch the Si O2 layer, a large area of suspended strained silicon（s Si） nanomembrane with uniform strain distribution is fabricated. The strain state in the implemented nanomembrane is comprehensively analyzed by using an UV-Raman spectrometer with different laser powers. The results show that the inherent strain is preserved while there are artificial Raman shifts induced by the heat effect, which is proportional to the laser power. The suspended s SOI nanomembrane will be an important material for future novel high-performance devices.
文摘This paper presents the analytical modeling of subthreshold current and subthreshold swing of short- channel fully-depleted （FD） strained-Si-on-insulator （SSOI） MOSFETs having vertical Gaussian-like doping pro- file in the channel. The subthreshold current and subthreshold swing have been derived using the parabolic approx- imation method. In addition to the effect of strain on silicon layer, various other device parameters such as channel length （L）, gate-oxide thickness （tox）, strained-Si channel thickness （ts_Si）, peak doping concentration （Np）, project range （Rp） and straggle （op） of the Gaussian profile have been considered while predicting the device characteris- tics. The present work may help to overcome the degradation in subthreshold characteristics with strain engineering. These subthreshold current and swing models provide valuable information for strained-Si MOSFET design. Ac- curacy of the proposed models is verified using the commercially available ATLASTM, a two-dimensional （2D） device simulator from SILVACO.
