In the present paper, continuum fracture mechanics is used to analyze the Smart-Cut process, a recently established ion cut technology which enables highly efficient fabrication of various silicon-on-insulator （SOI）...In the present paper, continuum fracture mechanics is used to analyze the Smart-Cut process, a recently established ion cut technology which enables highly efficient fabrication of various silicon-on-insulator （SOI） wafers of high uniformity in thickness. Using integral transform and Cauchy singular integral equation methods, the mode-I and mode-II stress intensity factors, energy release rate, and crack opening displacements are derived in order to examine several important fracture mechanisms involved in the Smart-Cut process. The effects of defect interaction and stiffening wafer on defect growth are investigated. The numerical results indi- cate that a stiffener/handle wafer can effectively prevent the donor wafer from blistering and exfoliation, but it slows down the defect growth by decreasing the magnitudes of SIF＇s. Defect interaction also plays an important role in the splitting process of SOI wafers, but its contribution depends strongly on the size, interval and internal pressure of defects. Finally, an analytical formula is derived to estimate the implantation dose required for splitting a SOI wafer.展开更多
The main objective of this paper is to study the singular natureof the crack-tip stress and electric displacement field in afunctionally gradient piezoelectric medium having materialcoefficients with a discontinuous d...The main objective of this paper is to study the singular natureof the crack-tip stress and electric displacement field in afunctionally gradient piezoelectric medium having materialcoefficients with a discontinuous derivative. The problem isconsidered for the simplest possible loading and geometry, namely,the anti-plane shear stress and electric displacement in -plane oftwo bonded half spaces in which the crack is parallel to theinterface.展开更多
By using the basic displacements and stresses caused by a single elastic inclusionand a single crack on infinite plane,the interaction problem between a crack and anelastic inclusion is reduced io solve a set of Cauch...By using the basic displacements and stresses caused by a single elastic inclusionand a single crack on infinite plane,the interaction problem between a crack and anelastic inclusion is reduced io solve a set of Cauchy-type singular integral equation.Based on this result,the singular behaviour of the solution for the inclusion-branchingcrack is analysed theoretically and the oscillating singular interface stress field isobtained. For the separating inclusion-crack problem,the stress intensity factors at thetips and the interface stress of the inclusion are calculated and the results of which aresatisfactory.展开更多
基金the Australian Research Council (ARC),the National Natural Science Foundation of China (10525210 and 10732050) 973 Project (2004CB619303)
文摘In the present paper, continuum fracture mechanics is used to analyze the Smart-Cut process, a recently established ion cut technology which enables highly efficient fabrication of various silicon-on-insulator （SOI） wafers of high uniformity in thickness. Using integral transform and Cauchy singular integral equation methods, the mode-I and mode-II stress intensity factors, energy release rate, and crack opening displacements are derived in order to examine several important fracture mechanisms involved in the Smart-Cut process. The effects of defect interaction and stiffening wafer on defect growth are investigated. The numerical results indi- cate that a stiffener/handle wafer can effectively prevent the donor wafer from blistering and exfoliation, but it slows down the defect growth by decreasing the magnitudes of SIF＇s. Defect interaction also plays an important role in the splitting process of SOI wafers, but its contribution depends strongly on the size, interval and internal pressure of defects. Finally, an analytical formula is derived to estimate the implantation dose required for splitting a SOI wafer.
基金the National Natural Science Foundation of China (No.10072041)the National Excellent Young Scholar Fund of China (No.10125209)the Teaching and Research Award Program for Outstanding Young Teachers in Higher Education Institutions of MOE,P.R.C..
文摘The main objective of this paper is to study the singular natureof the crack-tip stress and electric displacement field in afunctionally gradient piezoelectric medium having materialcoefficients with a discontinuous derivative. The problem isconsidered for the simplest possible loading and geometry, namely,the anti-plane shear stress and electric displacement in -plane oftwo bonded half spaces in which the crack is parallel to theinterface.
文摘By using the basic displacements and stresses caused by a single elastic inclusionand a single crack on infinite plane,the interaction problem between a crack and anelastic inclusion is reduced io solve a set of Cauchy-type singular integral equation.Based on this result,the singular behaviour of the solution for the inclusion-branchingcrack is analysed theoretically and the oscillating singular interface stress field isobtained. For the separating inclusion-crack problem,the stress intensity factors at thetips and the interface stress of the inclusion are calculated and the results of which aresatisfactory.
