Research progress on the effects of positive stress reduction on positive awareness and psychosocial functioning in patients with depressive disorders

To review the current research status of positive thought stress reduction therapy(PTSRT),psychosocial functioning of patients with depressive disorders,the shortcomings and outlook of the influence of PTSRT on positive thought awareness,and psychosocial functioning of patients with depressive disorders.This review has the objective to provide clinical healthcare personnel with essential information about the use of PTSRT to improve the level of positive thought and psychosocial functioning of patients with depressive disorders.

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

The time and temperature dependence of threshold voltage shift under positive-bias stress（PBS） and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide（a-IGZO） thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant τ is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier Eτ stress= 0.72 eV for the PBS process and an average effective energy barrier Eτ recovery= 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development.

Positive gate bias stress-induced hump-effect in elevated-metal metal-oxide thin film transistors

Under the action of a positive gate bias stress, a hump in the subthreshold region of the transfer characteristic is observed for the amorphous indium-gallium-zinc oxide thin film transistor, which adopts an elevated-metal metal-oxide structure. As stress time goes by, both the on-state current and the hump shift towards the negative gate-voltage direction. The humps occur at almost the same current levels for devices with different channel widths, which is attributed to the parasitic transistors located at the channel width edges. Therefore, we propose that the positive charges trapped at the back-channel interface cause the negative shift, and the origin of the hump is considered as being due to more positive charges trapped at the edges along the channel width direction. On the other hand, the hump-effect becomes more significant in a short channel device （L=2 μm）. It is proposed that the diffusion of oxygen vacancies takes place from the high concentration source/drain region to the intrinsic channel region.

Quantitative analysis of the Nepal earthquake on 25 April, 2015 in the perspective of future earthquake hazard

The earthquake that occurred in Nepal on 25 April, 2015 was followed by about 256 aftershocks which continued for another 20-25 days. The Coulomb stress change due to the main shock has been estimated at depths 10 km, 15 km and 22 km which justify the occurrence of about 218 aftershocks of magnitudes 4 to 5 mostly at 10 km depth and the rest of magnitudes 5 to 7.3 mostly at 15-30 km depth. The western, southern and northern fringes of the fault plane that slipped on 25 April, 2015 show a high value of positive Coulomb stress change estimated at the above mentioned depths and yet these parts of the fault remained devoid of any aftershock epicentre and therefore must be treated as seats for possible future events. Co-seismic displacement of 5 GPS stations located in Nepal after the devastating earthquake of MwZ8 on 25 April, 2015 and its largest aftershock of MwZ3 on 12 May, 2015 have been separately estimated and analysed.

重车调车机车臂的设计

对C型翻车机重车调车机车臂的结构进行了设计,针对车臂的等截面和变截面的应力强度进行了分析校核,设备实际运行状况良好,表明设计方法合理可靠。