期刊文献+
共找到2篇文章
< 1 >
每页显示 20 50 100
Electrochemical machining of a convex strips structure on a revolving part by using site directed power interruption
1
作者 Yongcheng GE Zengwei ZHU +1 位作者 Di ZHU Dengyong WANG 《Chinese Journal of Aeronautics》 SCIE EI CAS CSCD 2018年第10期2049-2056,共8页
Revolving parts with complex surface structures are widely used in machinery and mechanical equipment. The ECM process provides its adequacy to cut hard materials with different shapes, and its applications are widely... Revolving parts with complex surface structures are widely used in machinery and mechanical equipment. The ECM process provides its adequacy to cut hard materials with different shapes, and its applications are widely increased, due to its outstanding advantages. In this paper, a new method for machining a convex strips structure on a cylinder by using site directed power interruption(SDPI) in the ECM process is presented. A variable correction value of the power-off time was defined and optimized to obtain the ideal interval for better machining accuracy and stability.The electric field distribution and the simulated convex profiles show that the stray current density can be reduced effectively by using the proposed method. The correction value has an important influence on the machining accuracy. A suitable correction value in the range of 0.6–1.2 s can effectively improve the machining accuracy of the convex strips structure. Experiments were also conducted to verify the proposed method. Results have confirmed that the stray corrosion on the convex strips surface is significantly reduced and the machining accuracy of convex strips structure is remarkably improved by using the proposed method with a suitable correction value in the ECM process. Finally, a convex strip with a height of 2 mm on a thin-wall revolving part was also produced successfully using a correction value of 0.9. 展开更多
关键词 Convex strips structure Electrochemical machining Revolving part Site directed power interruption Stray corrosion
原文传递
A new static induction thyristor with high forward blocking voltage and excellent switching performances 被引量:1
2
作者 张彩珍 王永顺 +1 位作者 刘春娟 汪再兴 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第3期54-57,共4页
A new static induction thyristor (SITH) with a strip anode region and p- buffer layer structure (SAP-B) has been successfully designed and fabricated. This structure is composed of a p- buffer layer and lightly do... A new static induction thyristor (SITH) with a strip anode region and p- buffer layer structure (SAP-B) has been successfully designed and fabricated. This structure is composed of a p- buffer layer and lightly doped n- regions embedded in the p+-emitter. Compared with the conventional structure of a buffed-gate with a diffused source region (DSR buffed-gate), besides the simple fabrication process, the forward blocking voltage of this SITH has been increased to 1600 V from the previous value of 1000 V, the blocking gain increased from 40 to 70, and the turn-offtime decreased from 0.8 to 0.4μs. 展开更多
关键词 static induction thyristor strip anode region and p- buffer layer structure forward blocking voltage turn-off time
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部