The effects of different masks and patterns on the top stripping of GaAs microwire arrays fabricated by inductively coupled plasma etching for 20min and 40min are investigated. The results show that the mask layer is ...The effects of different masks and patterns on the top stripping of GaAs microwire arrays fabricated by inductively coupled plasma etching for 20min and 40min are investigated. The results show that the mask layer is the main affect of the top stripping of the GaAs microwires in 40min. Increasing the mask layers and reducing the photoresist layers can prevent top stripping and result in a suitable GaAs microwire array.展开更多
The special case of a crack under mode Ⅲ conditions was treated, lying parallel to the edges of an infinite strip with finite width and with the shear modulus varying exponentially perpendicular to the edges. By usin...The special case of a crack under mode Ⅲ conditions was treated, lying parallel to the edges of an infinite strip with finite width and with the shear modulus varying exponentially perpendicular to the edges. By using Fourier transforms the problem was formulated in terms of a singular integral equation. It was numerically solved by representing the unknown dislocation density by a truncated series of Chebyshev polynomials leading to a linear system of equations. The stress intensity factor （SIF） results were discussed with respect to the influences of different geometric parameters and the strength of the non-homogeneity. It was indicated that the SIF increases with the increase of the crack length and decreases with the increase of the rigidity of the material in the vicinity of crack. The SIF of narrow strip is very sensitive to the change of the non-homogeneity parameter and its variation is complicated. With the increase of the non-homogeneity parameter, the stress intensity factor may increase, decrease or keep constant, which is mainly determined by the strip width and the relative crack location. If the crack is located at the midline of the strip or if the strip is wide, the stress intensity factor is not sensitive to the material non-homogeneity parameter.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61261009 and 61067001the Key Program of Science and Technology Research of the Ministry of Education of China under Grant No 212090+1 种基金the Natural Science Foundation of Jiangxi Province under Grant No 20133ACB20005the Foundation of Training Academic and Technical Leaders for Main Majors of Jiangxi Province under Grant No 20142BCB22006
文摘The effects of different masks and patterns on the top stripping of GaAs microwire arrays fabricated by inductively coupled plasma etching for 20min and 40min are investigated. The results show that the mask layer is the main affect of the top stripping of the GaAs microwires in 40min. Increasing the mask layers and reducing the photoresist layers can prevent top stripping and result in a suitable GaAs microwire array.
基金Project supported by the National Natural Science Foundation of China (No.90305023)
文摘The special case of a crack under mode Ⅲ conditions was treated, lying parallel to the edges of an infinite strip with finite width and with the shear modulus varying exponentially perpendicular to the edges. By using Fourier transforms the problem was formulated in terms of a singular integral equation. It was numerically solved by representing the unknown dislocation density by a truncated series of Chebyshev polynomials leading to a linear system of equations. The stress intensity factor （SIF） results were discussed with respect to the influences of different geometric parameters and the strength of the non-homogeneity. It was indicated that the SIF increases with the increase of the crack length and decreases with the increase of the rigidity of the material in the vicinity of crack. The SIF of narrow strip is very sensitive to the change of the non-homogeneity parameter and its variation is complicated. With the increase of the non-homogeneity parameter, the stress intensity factor may increase, decrease or keep constant, which is mainly determined by the strip width and the relative crack location. If the crack is located at the midline of the strip or if the strip is wide, the stress intensity factor is not sensitive to the material non-homogeneity parameter.
