Dielectric properties and phase transitions of La_2O_3- and Sb_2O_3-doped barium strontium titanate ceramics

The dielectric properties and phase transition characteristics of La2O3- and Sb2O3-doped barium strontium titanate ceramics prepared by solid state route were investigated. The microstructure was identified by X-ray diffraction method and scanning electron microscope was also employed to observe the surface morphologies. It is found that （La,Sb）-codoped barium strontium titanate ceramics exhibit typical perovskite structure and the average grain size decreases dramatically with increasing the content of Sb2O3. Both La3＋ ions and Sb3＋ ions occupy the A-sites in perovskite lattice. The dielectric constant and dielectric loss of barium strontium titanate based ceramics are obviously influenced by La2O3 as well as Sb2O3 addition content. The tetragonal-cubic phase transition of La2O3 modified barium strontium titanate ceramics is of second order and the Curie temperature shifts to lower value with increasing the La2O3 doping content. The phase transition of （La,Sb）-codoped barium strontium titanate ceramics diffuses and the deviation from Curie-Weiss law becomes more obvious with the increase in Sb2O3 concentration. The temperature corresponding to the dielectric constant maximum of （La,Sb）-codoped barium strontium titanate ceramics decreases with increasing the Sb2O3 content, which is attributed to the replacement of host ions by the Sb3＋ ions.

Dielectric properties and point defect behavior of antimony oxide doped Ti deficient barium strontium titanate ceramics

The microstructures and dielectric properties of Sb2O3-doped Ti deficient barium strontium titanate ceramics prepared by solid state method were investigated with non-stoichiometric level and Sb2O3content by SEM,XRD and LCR measure system.It is found that with the increase ofδ,(Ba0.75Sr0.25)Ti1-δO3-2δceramics transform from single phase solid solutions with typical cubic perovskite structure to multiphase compounds while(Ba0.75Sr0.25)Ti0.998O2.996ceramics remain to be single-phase with the increasing Sb2O3content.The distortion of the ABO3perovskite lattice caused by VTi″″and VO..induces the drop of Curie temperature and the rise of relative dielectric constant in(Ba0.75Sr0.25)Ti1-δO3-2δceramics with increasingδvalue.The orientation of VO??elastic dipoles results in the domain-wall pinning and thus the reduction of the dielectric loss.With increasing Sb2O3content,the relative dielectric constant,dielectric constant maximum and Curie temperature of(Ba0.75Sr0.25)Ti0.998O2.996ceramics decrease dramatically while the dielectric loss increases.

Preparation and characterization of barium strontium titanate/silicon nanoporous pillar array composite thin films by a sol-gel method

Barium strontium titanate （Ba0.5Sr0.5TiO3, BST）/silicon nanoporous pillar array （Si-NPA） thin films were prepared by a spin-coating/annealing technique based on Si-NPA with micro/nano-structure. Both the isomer conversion of acetylacetone and the network structure combined by enol and Ti-alkoxide facilitate the formation of the BST sol and the subsequent crystallization. Before the perovskite BST begins to form, the intermediate phase （Ba, Sr）Ti2OsCO3 is found. The boundary between BST and Si-NPA is of clarity and little interface diffusion, disclosing that Si-NPA is an ideal template substrate in the preparation of multifunctional composite films.

Glass modified barium strontium titanate ceramics for energy storage capacitor at elevated temperatures

A glass with composition of B_(2)O_(3)-Bi_(2)O_(3)-SiO_(2)-CaO-BaO-Al_(2)O_(3)-ZrO_(2)(BBSZ)modified Ba_(x)Sr_(1-x)TiO_(3)(BST,x=0.3 and 0.4)ceramics were prepared by a conventional solid state reaction method abided by a formula of BST+y%BBSZ(y=0,2,4,7,and 10,in mass).The effect of BBSZ glass content on the structure,dielectric properties and energy storage characteristics of the ceramics was investigated.The dielectric constant reduced but the endurable electrical strength enhanced due to the BBSZ glass addition in BST ceramics.In particular,the dielectric loss of the ceramics at elevated temperature(e.g.200℃)can be strongly suppressed from tanδ>20%to tanδ<3% after BBSZ glass modification.For Ba_(0.3)Sr_(0.7)TiO_(3)+2%BBSZ ceramics,an optimized energy storage density(γ=0.63 J/cm^(3))and efficiency(η=91.6%)under an applied electric field of 160 kV/cm was obtained at room temperature.Meanwhile,the temperature dependent polarization-electric field(P-E)hysteresis loops were measured to evaluate the energy storage characteristics of the ceramics potential for high voltage capacitor application at elevated temperatures.

Sol-gel derived nanocrystalline and mesoporous barium strontium titanate prepared at room temperature

Perovskite-type barium strontium titanate （BST） thin films and powders with nanocrystalline and mesoporous structure were prepared by a straightforward particulate sol-gel route at room temperature. The prepared sol had a narrow particle size distribution of about 20 nm. X-ray diffraction （XRD） revealed that phase composition and preferable orientation growth of BST depended upon the annealing temperature. Transmission electron microscope （TEM） images showed that the crystallite size of the powders decreased with increasing annealing temperature from 8 nm at 25 ℃ down to 5 nm at 800 ℃. Field emission scanning electron microscope （FE-SEM） analysis and atomic force microscope （AFM） images revealed that BST thin films had mesoporous and nanocrystafiine structure with average grain size of 3Onm at 600 ℃. Based on Brunauer-Emmett-Teller （BET） analysis, the synthesized BST showed mesoporous structure containing nnres with needle, and nlate shanes and BET surface area in the range of 49-32 m^2/g at 500-800℃

Ultra-high extinction-ratio light modulation by electrically tunable metasurface using dual epsilon-near-zero resonances

The lossy nature of indium tin oxide(ITO) at epsilon-near-zero(ENZ) wavelength is used to design an electrically tunable metasurface absorber. The metasurface unit cell is constructed of a circular resonator comprising two ITO discs and a high dielectric constant perovskite barium strontium titanate(BST) film. The ENZ wavelength in the accumulation and depletion layers of ITO discs is controlled by applying a single bias voltage. The coupling of magnetic dipole resonance with the ENZ wavelength inside the accumulation layer of ITO film causes total absorption of reflected light. The reflection amplitude can achieve ~84 d B or ~99.99% modulation depth in the operation wavelength of 820 nm at a bias voltage of-2.5 V. Moreover, the metasurface is insensitive to the polarization of the incident light due to the circular design of resonators and the symmetrical design of bias connections.

Influence of Composition on Properties of Medium Temperature Sintering (Ba,Sr)TiO_3 Series Capacitor Ceramics

The influence of the composition （Yb2O3, MgO, CeO2, Li2CO3） on the dielectric properties of medium temperature sintering （Ba, Sr）TiO3 （BST） series capacitor ceramics was investigated by means of conventional technology process and orthogonal design experiments. The major secondary influencing factors and the influencing tendency of various factor＇s levels for the dielectric properties of BST ceramics were obtained. The optimum formula for maximum dielectric constant （ε） and for minimum dielectric loss （tanδ） was obtained under the experimental conditions. The BST ceramics with optimum comprehensive properties was obtained by means of orthogonal design experiments, with the sintering temperature at 1200 ℃, the dielectric constant 5239, the dielectric loss 0.0097, withstand electric voltage over 6 MV·m^-1, capacitance temperature changing ence of various components on the providing the basis for preparation rate （△C/C） - 75.67%, and suited for Y5V character. The mechanism of the infludielectric properties of medium temperature sintering BST ceramics was studied, thus of multilayer capacitor ceramics and single-chip capacitor ceramics.

Study on BSTO/MgO Ferroelectric Materials for Phase Shift Doped with Rare Earth Oxides

Barium strontium titanate/magnesia （BSTO/MgO） ferroeleetric materials for phase shift were prepared by traditional ceramic process-solid phase synthesis. The effects of various rare earth oxides of 0.5 % on dielectric behaviors of BSTO/MgO composites were studied in terms of permittivity, loss tangent and tunability both at low and high frequencies. The dielectric constant of Y2O3 and Er2O3 doped samples decreases from 160 to 120, and the microwave loss of La2O3 and Er2O3 doped samples decreases from 8.2 x 10-3 to 6.8 x 10-3. Only La203 increases the tunability of BSTO/MgO system, from 13.6% to 14.8%. For the La2O3 doped sample, the value of tunability is more than 14% with the external DC field 4000 V·mm^-1 and the microwave loss at 2.47 GHz is 6.77 ×10^-3 and, hence, it can basically meet the requirements of phase shifters working at microwave frequencies. The influence mechanism was discussed preliminarily.

Preparation and Microstrutures of BSTO/MgO Ferroelectric Materials for Phase Shift

Barium strontium titanate/magnesia （BSTO/MgO） ferroelectric material for phase shift was prepared by traditional solid phase synthesis. The phase distribution, microstructure and electric properties were investigated. The results show that no secondary phase appears in the composites and the dimension of grains distributes uniformly. With 50 wt% MgO content, the dielectric tunability reaches 17.5 % in the external DC field of 4 000 Vomm^-1 and the microwave loss at about 2.5 GHz is 8×10^-3. Hence, it can be applied in tunable microwave phase shifters.

Ultrahigh frequency tunability of aperture-coupled microstrip antenna via electric-field tunable BST

A composite ceramic with nominal composition of 45.0 wt%（Ba0.5Sr0.5）TiO3–55.0 wt%MgO（acronym is BST–MgO） is sintered for fabricating a frequency reconfigurable aperture-coupled microstrip antenna. The calcined BST–Mg O composite ceramic exhibits good microwave dielectric properties at X-band with appropriate dielectric constant εr around85, lower dielectric loss tan δ about 0.01, and higher permittivity tunability 14.8% at 8.33 k V/cm. An ultrahigh E-field tunability of working frequency up to 11.0%（i.e., from 9.1 GHz to 10.1 GHz with a large frequency shift of 1000 MHz）at a DC bias field from 0 to 8.33 k V/cm and a considerably large center gain over 7.5 d B are obtained in the designed frequency reconfigurable microstrip antenna. These results demonstrate that BST materials are promising for the frequency reconfigurable antenna.

Dielectric Properties and Structure of Yb_2O_3-Doped (Ba,Sr)TiO_3 Ceramics

The effect of Yb2O3 doping amount on the dielectric properties of (Ba, Sr)TiO3 (BST) series capacitor ceramics prepared using solid state reaction method were studied. With the increasing of Yb2O3 doping amount, the dielectric constant(ε) of materials increased, the dielectric loss(tanδ) of materials decreased to minimum when w(Yb2O3) was 0.9%. The BST ceramics with high ε(10000), low tanδ(0.0213) and high DC breakdown voltage(7.2 kV·mm-1) were obtained. The influence of Yb2O3 doping amount on the structure of BST ceramics was studied by means of X-ray diffraction(XRD) and scanning electron microscope. The influencing mechanism of Yb2O3 on the dielectric properties of BST ceramics was studied. The results showed that Yb2O3 doping influenced the properties and structure of BST ceramics by means of forming defect solid solution, but did not influence crystal grain size,the crystal phase was single perovskite structure, did not influence XRD data of BST and did not improve capacitance temperature property greatly, but increase dielectric constant greatly. These results provided the basis for Yb2O3-doped BST series capacitor ceramics.

Preparation and Characterization of La<SUB>2</SUB>O<SUB>3</SUB>Doped Ba<SUB>0.3</SUB>Sr<SUB>0.7</SUB>TiO<SUB>3</SUB>Perovskite Ceramics of Varied Sintering Temperature and Doping

In order to explore new application opportunities of Barium Strontium Titanate (BST) ceramic composite by modifying the conventional ferroelectric properties of BST through La2O3 doping in BST matrix sintered at different temperature was investigated in this current study. Unadulterated Ba0.3Sr0.7TiO3 (BST) matrix was prepared from BaTiO3 (99.95%) and SrTiO3 (99.95%) taken in stoichiometric extents which later doped by La2O3 (99.99%) in varying extents (0.05 g, 0.10 g and 0.15 g) exploiting solid state reaction route. Doping caused drag effect for the penetration of impurities and sintering temperature helped the impurities migration to BST. Dielectric constant gets lower with rising of frequency, as electrons do not get enough time to polarize at high frequency. Dielectric constant and conductance are found maximum for the sample (0.1 g La2O3 doped BST) sintered at 1460°C and reverse is found in impedance analysis. These electrical properties showed visible frequency dependent response irrespective of sintering temperature and doping.

Enhanced electrocaloric effect at room temperature in Mn^(2+) doped lead-free(BaSr)TiO_(3) ceramics via a direct measurement

(Ba_(1-x)Sr_(x))(MnyTi1-y)O_(3)(BSMT)ceramics with x=35,40 mol%and y=0,0.1,0.2,0.3,0.4,0.5 mol%were prepared using a conventional solid-state reaction approach.The dielectric and ferroelectric properties were characterized using impedance analysis and polarization-electric field(P-E)hysteresis loop measurements,respectively.The adiabatic temperature drop was directly measured using a thermocouple when the applied electric field was removed.The results indicate that high permittivity and low dielectric losses were obtained by doping 0.1-0.4 mol%of manganese ions in(BaSr)TiO_(3)(BST)specimens.A maximum electrocaloric effect(ECE)of 2.75 K in temperature change with electrocaloric strength of 0.55 K·(MV/m)^(-1)was directly obtained at~21℃and 50 kV/cm in Ba_(0.6)Sr_(0.4)Mn_(0.001)Ti_(0.999)O_(3) sample,offering a promising ECE material for practical refrigeration devices working at room temperature.

AC Conductivity and Dielectric Relaxation Behavior of Sol-gel Ba_xSr_(1-x)TiO_3 Thin Films

BaxSr1-xTiO3 sol-gel thin films with x--0.5, 0.7 and 0.8 have been fabricated as AI/BST/Pt capacitor. The AC conductivity and dielectric properties over a frequency rang of 10 Hz and I MHz have been studied in order to explore the ion dynamics and relaxation mechanisms in the films. The frequency dependent conductivity plots show three regions of conduction processes. Dielectric results show that ε＇ at low frequencies increases as Sr content decreases, whereas at high frequencies, it shows opposite variation, which is attributed to the dipole dynamics. The electric modulus plots reveal the relaxation peaks which are not observed in the ε＂ plots and the contribution of the grains, grain boundaries and electrode to the relaxation mechanisms.

Dielectric properties of BaMg_(1/3)Nb_(2/3)O_(3) doped Ba_(0.45)Sr_(0.55)TiO_(3) thin films for tunable microwave applications

Ba(Mg_(1/3)Nb_(2/3))O_(3)(BMN)doped and undoped B_(0.45)Sr_(0.55)TiO_(3)(BST)thin films were deposited via radio frequency magnetron sputtering on PUTiO_(2)/SiO_(2)/Al_(2)O_(3) substrates.The surface morphology and chemical state analyses of the films have shown that the BMN doped BST film has a smoother surface with reduced oxygen vacancy,resulting in an improved insulating properties of the BST film.Dielectric tunability,loss,and leakage current(LC)of the undoped and BMN doped BST thin flms were studied.The BMN dopant has remarkably reduced the dielectric loss(~38%)with no significant effect on the tunability of the BST film,leading to an increase in figure of merit(FOM).This is attributed to the opposing behavior of large Mg2+whose detrimental effect on tunability is partially compensated by small Nb5+as the two substitute Ti4+in the BST.The coupling between Mg″_(Ti)and V_(o)charged defects suppresses the dielectric loss in the film by cutting electrons from hopping between Ti ions.The LC of the films was investigated in the temperature range of 300-450K.A reduced LC measured for the BMN doped BST film was correlated to the formation of defect dipoles from Mg″_(Ti),V_(o)and Nb_(Ti) charged defects.The carrier transport properties of the films were analyzed in light of Schottky thermionic emission(SE)and Poole-Frenkel(PF)enmission mechanisms.The result indicated that while the carrier transport mechanism in the undoped film is interface limited(SE),the conduction in the BMN doped film was dominated by bulk processes(PF).The change of the conduction mechanism from SE to PF as a result of BMN doping is atributed to the presence of uncoupled Nb_(Ti) stting as a positive trap center at the shallow donor level of the BST.

Structure and dielectric properties of NBT-xBT-ST lead-free ceramics for energy storage

(0:74-x)(Na_(0.5)Bi_(0.5))TiO_(3)-xBaTiO_(3)-0.26SrTiO_(3)(x=0~0.1)(abbreviated as NBT-xBT-ST)lead-free ceramics were fabricated by a solid-state reaction method.The effect of Ba doping amount x on the structure and energy storage properties of NBT-xBT-ST ceramics were investigated.All the NBT-xBT-ST ceramics showed single perovskite structure with a pseudocubic phase.Ba doping effectively suppressed grain growth,in favor of forming small and uniform grains.The ceramics with a composition of x=0.04,an optimized energy storage density(γ=0.47 J/cm^(3))and efficiency(η=48:67%),under an applied electric field of 50 kV/cm,should be a candidate for solid-state compact pulsed power capacitor materials.