Ferrites are a class of cohesive new materiafs required for many specialised applications. Cobalt ferrite (CoFe2O4) has been identified as a substitute for carbon and serves as a non consumable anode for an eco-friend...Ferrites are a class of cohesive new materiafs required for many specialised applications. Cobalt ferrite (CoFe2O4) has been identified as a substitute for carbon and serves as a non consumable anode for an eco-friendly and energy efficient production of aluminium. Pellets of cobalt ferrite have been prepared by powder metallurgical process and their electrical properties have been investigated from ambient temperature to 1273 K. The structural and morphological features have been studied by X-ray diffraction and scanning electron microscopy The relationships between such properties, chemical composition and sintering temperatures are thoroughly discussed.展开更多
Zinc oxide （ZnO） is one of the most promising and frequently used semiconductor materials. In-doped nanos- tructure ZnO thin films are grown on p-type gallium nitride substrates by employing the simultaneous rf and ...Zinc oxide （ZnO） is one of the most promising and frequently used semiconductor materials. In-doped nanos- tructure ZnO thin films are grown on p-type gallium nitride substrates by employing the simultaneous rf and dc magnetron co-sputtering technique. The effect of In-doping on structural, morphological and electrical properties is studied. The different dopant concentrations are accomplished by varying the direct current power of the In target while keeping the fixed radio frequency power of the ZnO target through the co-sputtering deposition technique by using argon as the sputtering gas at ambient temperature. The structural analysis confirms that all the grown thin films preferentially orientate along the c-axis with the wurtzite hexagonal crystal structure without having any kind of In oxide phases. The presenting Zn, 0 and In elements＇ chemical compositions are identified with EDX mapping analysis of the deposited thin films and the calculated M ratio has been found to decrease with the increasing In power. The surface topographies of the grown thin films are examined with the atomic force microscope technique. The obtained results reveal that the grown film roughness increases with the In power. The Hall measurements ascertain that all the grown films have n-type conductivity and also the other electrical parameters such as resistivity,mobility and carrier concentration are analyzed.展开更多
Following are the comments for the queries raised by Prof. Pawel E. Tomaszewski on our published paper entitled ＂Structural, Optical, and Electrical Properties of Zn-Doped CdO Thin Films Fabricated by a Simplified Sp...Following are the comments for the queries raised by Prof. Pawel E. Tomaszewski on our published paper entitled ＂Structural, Optical, and Electrical Properties of Zn-Doped CdO Thin Films Fabricated by a Simplified Spray Pyrolysis Technique＂ by K. Usharani and A.R. Balu published in Acta Metall. Sin.展开更多
The commented paper [1] presents the results on structural, optical, and electrical properties of Zn-doped CdO thin films. Unfortunately, there are several mistakes and errors not found by any of referees. It is neces...The commented paper [1] presents the results on structural, optical, and electrical properties of Zn-doped CdO thin films. Unfortunately, there are several mistakes and errors not found by any of referees. It is necessary to show these mistakes or misleading statements to avoid their use in the future papers by authors and other peoples.展开更多
Tin sulfide（Snx Sy/ thin films were prepared by a spray ultrasonic technique on glass substrate at 300℃.The influence of deposition time tD2, 4, 6, 8 and 10 min on different properties of thin films, such as（XRD）,...Tin sulfide（Snx Sy/ thin films were prepared by a spray ultrasonic technique on glass substrate at 300℃.The influence of deposition time tD2, 4, 6, 8 and 10 min on different properties of thin films, such as（XRD）,photoluminescence（PL） and（UV） spectroscopy visible spectrum and four-point were investigated. X-ray diffraction showed that thin films crystallized in SnS2, SnS, and Sn2S3 phases, but the most prominent one is SnS_2. The results of the（UV） spectroscopy visible spectrum show that the film which was deposited at 4 min has a large transmittance of 60% in the visible region. The photoluminescence spectra exhibited the luminescent peaks in the visible region, which shows its potential application in photovoltaic devices. The electrical resistivity（ρ） values of SnxSy films have changed from 8.1×1064to 1.62Ω·cm with deposition time.展开更多
文摘Ferrites are a class of cohesive new materiafs required for many specialised applications. Cobalt ferrite (CoFe2O4) has been identified as a substitute for carbon and serves as a non consumable anode for an eco-friendly and energy efficient production of aluminium. Pellets of cobalt ferrite have been prepared by powder metallurgical process and their electrical properties have been investigated from ambient temperature to 1273 K. The structural and morphological features have been studied by X-ray diffraction and scanning electron microscopy The relationships between such properties, chemical composition and sintering temperatures are thoroughly discussed.
基金Supported by the RU Top-Down under Grant No 1001/CSS/870019
文摘Zinc oxide （ZnO） is one of the most promising and frequently used semiconductor materials. In-doped nanos- tructure ZnO thin films are grown on p-type gallium nitride substrates by employing the simultaneous rf and dc magnetron co-sputtering technique. The effect of In-doping on structural, morphological and electrical properties is studied. The different dopant concentrations are accomplished by varying the direct current power of the In target while keeping the fixed radio frequency power of the ZnO target through the co-sputtering deposition technique by using argon as the sputtering gas at ambient temperature. The structural analysis confirms that all the grown thin films preferentially orientate along the c-axis with the wurtzite hexagonal crystal structure without having any kind of In oxide phases. The presenting Zn, 0 and In elements＇ chemical compositions are identified with EDX mapping analysis of the deposited thin films and the calculated M ratio has been found to decrease with the increasing In power. The surface topographies of the grown thin films are examined with the atomic force microscope technique. The obtained results reveal that the grown film roughness increases with the In power. The Hall measurements ascertain that all the grown films have n-type conductivity and also the other electrical parameters such as resistivity,mobility and carrier concentration are analyzed.
文摘Following are the comments for the queries raised by Prof. Pawel E. Tomaszewski on our published paper entitled ＂Structural, Optical, and Electrical Properties of Zn-Doped CdO Thin Films Fabricated by a Simplified Spray Pyrolysis Technique＂ by K. Usharani and A.R. Balu published in Acta Metall. Sin.
文摘The commented paper [1] presents the results on structural, optical, and electrical properties of Zn-doped CdO thin films. Unfortunately, there are several mistakes and errors not found by any of referees. It is necessary to show these mistakes or misleading statements to avoid their use in the future papers by authors and other peoples.
文摘Tin sulfide（Snx Sy/ thin films were prepared by a spray ultrasonic technique on glass substrate at 300℃.The influence of deposition time tD2, 4, 6, 8 and 10 min on different properties of thin films, such as（XRD）,photoluminescence（PL） and（UV） spectroscopy visible spectrum and four-point were investigated. X-ray diffraction showed that thin films crystallized in SnS2, SnS, and Sn2S3 phases, but the most prominent one is SnS_2. The results of the（UV） spectroscopy visible spectrum show that the film which was deposited at 4 min has a large transmittance of 60% in the visible region. The photoluminescence spectra exhibited the luminescent peaks in the visible region, which shows its potential application in photovoltaic devices. The electrical resistivity（ρ） values of SnxSy films have changed from 8.1×1064to 1.62Ω·cm with deposition time.
