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Edge Structure of Reynolds Stress and Poloidal Flow on the HL-1M Tokamak 被引量:6
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作者 洪文玉 王恩耀 +2 位作者 曹建勇 李强 刘达致 《Plasma Science and Technology》 SCIE EI CAS CSCD 2001年第3期791-796,共6页
The measurement on radial profile of electrostatic Reynolds stress, plasma poloidal rotations, radial and poloidal electric field have been performed in the plasma boundary region of the HL-IM Tokamak using a multi-ar... The measurement on radial profile of electrostatic Reynolds stress, plasma poloidal rotations, radial and poloidal electric field have been performed in the plasma boundary region of the HL-IM Tokamak using a multi-array of Mach/Langmuir probes. In the experiments of Lower Hybrid Current Drive (LHCD), Supersonic Molecular Beam injection (SMBI), Multi-shot Pellet Injection (MPI) and Neutral Beam injection (NBI), the correlation between the Reynolds stress and poloidal flow in the edge plasma is presented. The results indicate that a sheared poloidal flow can be generated in Tokamak plasma due to radially varying Reynolds stress. 展开更多
关键词 LHCD Edge structure of Reynolds Stress and Poloidal Flow on the HL-1m Tokamak HL
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Metamorphic growth of 1.55 μm InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates
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作者 李小波 黄永清 +7 位作者 王俊 段晓峰 张瑞康 李业弘 刘正 王琦 张霞 任晓敏 《Chinese Optics Letters》 SCIE EI CAS CSCD 2015年第3期32-36,共5页
We fabricate a GaAs-based InGaAs/InGaAsP multiple quantum wells (MQWs) laser at 1.55 pm. Using two-step growth method and thermal cyclic annealing, a thin low-temperature InP layer and a thick InP buffer layer are g... We fabricate a GaAs-based InGaAs/InGaAsP multiple quantum wells (MQWs) laser at 1.55 pm. Using two-step growth method and thermal cyclic annealing, a thin low-temperature InP layer and a thick InP buffer layer are grown on GaAs substrates by low-pressure metal organic chemical vapor deposition technology. Then, high- quality MQWs laser structures are grown on the InP buffer layer. Under quasi-continuous wave (QCW) condition, a threshold current of 476 mA and slope efficiency of 0.15 mW/mA are achieved for a broad area device with 50 μm wide strip and 500 μm long cavity at room-temperature. The peak wavelength of emission spectrum is 1549.5 nm at 700 mA. The device is operating for more than 2000 h at room-temperature and 600 mA. 展开更多
关键词 AS In GA m InGaAs/InGaAsP multiple quantum wells laser structures on GaAs substrates metamorphic growth of 1.55
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