A novel low-cost sub-50nm poly-Si gate patterning technology is proposed and experimentally demonstrated.The technology is resolution-independent,ie.,it does not contain any critical photolithographic steps.The nano-s...A novel low-cost sub-50nm poly-Si gate patterning technology is proposed and experimentally demonstrated.The technology is resolution-independent,ie.,it does not contain any critical photolithographic steps.The nano-scale masking pattern for gate formation is formed according to the image transfer of an edge-defined spacer.Experimental results reveal that the resultant gate length,about 75 to 85 percent of the thickness,is determined by the thickness of the film to form the spacer.From SEM photograph,the cross-section of the poly-Si gate is seen to be an inverted-trapezoid,which is useful to reduce the gate resistance.展开更多
An extended interaction oscillator （EIO） generating 120 GHz wave in sub-terahertz waves is studied by using the three-dimensional electromagnetic simulation software CST and PIC codes. A rectangular reentrant couple...An extended interaction oscillator （EIO） generating 120 GHz wave in sub-terahertz waves is studied by using the three-dimensional electromagnetic simulation software CST and PIC codes. A rectangular reentrant coupled-cavity is proposed as the slow-wave structure of EIO. By CST, the circuit parameters including frequency-phase dispersion, interaction impedance and characteristic impedance are simulated and calculated. The operation mode of EIO is chosen very close to the point where βL = 2π with corresponding frequency 120 GHz, the beam voltage 12 kV and the dimensions of the cavity with the period 0.5mm, the height 3mm and the width 1.4mm. Simulation results of beam-wave interaction by PIC show that the exciting frequency is 120.85 GHz and output peak power 465 W with 12-period coupled-cavity with the perveance 0.17 μP. Simulation results indicate that the EIO has very wide range of the operation voltage.展开更多
Reliable fabrication of micro/nanostructures with sub-10 nm features is of great significance for advancing nanoscience and nanotechnology.While the capability of current complementary metal-oxide semiconductor(CMOS)c...Reliable fabrication of micro/nanostructures with sub-10 nm features is of great significance for advancing nanoscience and nanotechnology.While the capability of current complementary metal-oxide semiconductor(CMOS)chip manufacturing can produce structures on the sub-10 nm scale,many emerging applications,such as nano-optics,biosensing,and quantum devices,also require ultrasmall features down to single digital nanometers.In these emerging applications,CMOS-based manufacturing methods are currently not feasible or appropriate due to the considerations of usage cost,material compatibility,and exotic features.Therefore,several specific methods have been developed in the past decades for different applications.In this review,we attempt to give a systematic summary on sub-10 nm fabrication methods and their related applications.In the first and second parts,we give a brief introduction of the background of this research topic and explain why sub-10 nm fabrication is interesting from both scientific and technological perspectives.In the third part,we comprehensively summarize the fabrication methods and classify them into three main approaches,including lithographic,mechanics-enabled,and post-trimming processes.The fourth part discusses the applications of these processes in quantum devices,nano-optics,and high-performance sensing.Finally,a perspective is given to discuss the challenges and opportunities associated with this research topic.展开更多
Directed self-assembly(DSA)emerges as one of the most promising new patterning techniques for single digit miniaturization and next generation lithography.DSA achieves high-resolution patterning by molecular assembly ...Directed self-assembly(DSA)emerges as one of the most promising new patterning techniques for single digit miniaturization and next generation lithography.DSA achieves high-resolution patterning by molecular assembly that circumvents the diffraction limit of conventional photolithography.Recently,the International Roadmap for Devices and Systems listed DSA as one of the advanced lithography techniques for the fabrication of 3-5 nm technology node devices.DSA can be combined with other lithography techniques,such as extreme ultra violet(EUV)and 193 nm immersion(193i),to further enhance the patterning resolution and the device density.So far,DSA has demonstrated its superior ability for the fabrication of nanoscale devices,such as fin field effect transistor and bit pattern media,offering a variety of configurations for high-density integration and low-cost manufacturing.Over 1 T in-2 device density can be achieved either by direct templating or coupled with nanoimprinting to improve the throughput.The development of high x block copolymer further enhances the patterning resolution of DSA.In addition to its superiority in high-resolution patterning,the implementation ofDSA on a 300 mm pivot line fully demonstrates its potential for large-scale,high-throughput,and cost-effective manufacturing in industrial environment.展开更多
We present two cavity-stabilized lasers at 1555 nm, which are built to be the frequency source for a transportable photonic microwave generation system. The frequency instability reaches the thermal noise limit （7 &#...We present two cavity-stabilized lasers at 1555 nm, which are built to be the frequency source for a transportable photonic microwave generation system. The frequency instability reaches the thermal noise limit （7 ×10-16） of the 10-cm ultra-low expansion glass cavity at 1-10s averaging time and the beat signal of the two lasers reveals a remarkable linewidth of 185mHz.展开更多
A high quality epitaxial Si layer by molecular beam epitaxy(MBE)on Si(001)substrates was demonstrated to fabricate a channel with low density defects for high-performance Fin FET technology.In order to study the effec...A high quality epitaxial Si layer by molecular beam epitaxy(MBE)on Si(001)substrates was demonstrated to fabricate a channel with low density defects for high-performance Fin FET technology.In order to study the effects of fin width and crystallography orientation on the MBE behavior,a 30 nm thick Si layer was deposited on the top of an etched Si fin with different widths from 10 nm to 50 nm and orientations of 100 and 110.The result shows that a defect-free Si film was obtained on the fin by MBE,since the etching damage was confined in the bottom of the epitaxial layer.In addition,the vertical growth of the epitaxial Si layer was observed on sub-10 nm 100 Si fins,and this was explained by a kinetic mechanism.展开更多
Under the condition of combined effects of group--velocitydispersion and self- phase modulation, the step Fourier method isused to simulate the propagation of initial chirped super-Gaussianpulses inside fiber. The ini...Under the condition of combined effects of group--velocitydispersion and self- phase modulation, the step Fourier method isused to simulate the propagation of initial chirped super-Gaussianpulses inside fiber. The initial chirp influences the shapes of superGaussian pulses in propagation process, and positive and negativechirps have different effects. For the existing of initial chirp, thesplits of pulses and the spreading speed move ahead and increase.When the amplitude of super-Gaussian pulses increases by 1.4 times,in the range of │C│<1.5, pulses can keep good shapes along theirpropagation distance.展开更多
Solid-state nanopores with controllable pore size and morphology have huge application potential.However,it has been very challenging to process sub-10 nm silicon nanopore arrays with high efficiency and high quality ...Solid-state nanopores with controllable pore size and morphology have huge application potential.However,it has been very challenging to process sub-10 nm silicon nanopore arrays with high efficiency and high quality at low cost.In this study,a method combining metal-assisted chemical etching and machine learning is proposed to fabricate sub-10 nm nanopore arrays on silicon wafers with various dopant types and concentrations.Through a SVM algorithm,the relationship between the nanopore structures and the fabrication conditions,including the etching solution,etching time,dopant type,and concentration,was modeled and experimentally verified.Based on this,a processing parameter window for generating regular nanopore arrays on silicon wafers with variable doping types and concentrations was obtained.The proposed machine-learning-assisted etching method will provide a feasible and economical way to process high-quality silicon nanopores,nanostructures,and devices.展开更多
The two-color circularly polarized pulses scheme was proposed to generate isolated attosecond pulses in our previous work [Phys. Rev. A 87 （2013） 043406], while the polarization of the attosecond pulse was not inves...The two-color circularly polarized pulses scheme was proposed to generate isolated attosecond pulses in our previous work [Phys. Rev. A 87 （2013） 043406], while the polarization of the attosecond pulse was not investigated. We show a supplementary explanation of this scheme and present another scheme to generate linear isolated attosecond pulses by combining a circularly polarized pulse with an elliptically polarized pulse. High-order harmonic generation and quantum path control are investigated to compare these two schemes. Both schemes can obtain supercontinuum spectra plateau from about 200eV to 550eV, which belong to the water window region. It is found that the latter scheme can clearly eliminate the short quantum path and extend the harmonic plateau. A linear isolated attosecond pulse with a duration of sub-6Oas can be generated by superposing a bandwidth of 70eV.展开更多
The molecular orientation created by laser fields is important for steering chemical reactions. In this paper, we propose a theoretical scheme to manipulate field-free molecular orientation by using an intense super-G...The molecular orientation created by laser fields is important for steering chemical reactions. In this paper, we propose a theoretical scheme to manipulate field-free molecular orientation by using an intense super-Gaussian laser pulse and a time-delayed terahertz half-cycle pulse(THz HCP). It is shown that the degree of field-free orientation can be doubled by the combined pulse with respect to the super-Gaussian pulse or THz HCP alone. Moreover, different laser intensities, carrier envelop phases, shape parameters, and time delays have great influence on the positive and negative orientations, with other conditions unchanged. Furthermore, it is indicated that the maximum degree and direction of molecular orientation can be precisely controlled by half of the duration of the super-Gaussian pulse. Finally, by adjusting the laser parameters of the super-Gaussian laser pulse and THz HCP, the optimal results of negative orientation and corresponding rotational populations are obtained at different temperatures of the molecular system.展开更多
文摘A novel low-cost sub-50nm poly-Si gate patterning technology is proposed and experimentally demonstrated.The technology is resolution-independent,ie.,it does not contain any critical photolithographic steps.The nano-scale masking pattern for gate formation is formed according to the image transfer of an edge-defined spacer.Experimental results reveal that the resultant gate length,about 75 to 85 percent of the thickness,is determined by the thickness of the film to form the spacer.From SEM photograph,the cross-section of the poly-Si gate is seen to be an inverted-trapezoid,which is useful to reduce the gate resistance.
基金supported by the National Natural Science Foundation of China (Grant No 10676110)the National Basic Research Program of China (Grant No 2007CB310401)
文摘An extended interaction oscillator （EIO） generating 120 GHz wave in sub-terahertz waves is studied by using the three-dimensional electromagnetic simulation software CST and PIC codes. A rectangular reentrant coupled-cavity is proposed as the slow-wave structure of EIO. By CST, the circuit parameters including frequency-phase dispersion, interaction impedance and characteristic impedance are simulated and calculated. The operation mode of EIO is chosen very close to the point where βL = 2π with corresponding frequency 120 GHz, the beam voltage 12 kV and the dimensions of the cavity with the period 0.5mm, the height 3mm and the width 1.4mm. Simulation results of beam-wave interaction by PIC show that the exciting frequency is 120.85 GHz and output peak power 465 W with 12-period coupled-cavity with the perveance 0.17 μP. Simulation results indicate that the EIO has very wide range of the operation voltage.
基金supported by the National Natural Science Foundation of China(Grants Nos.51722503,51805160and U1930114)the National Key Research and Development Program of China(Grant No.2018YFE0109200)the Guangdong Basic Research Foundation(Grant No.2020A1515110971)。
文摘Reliable fabrication of micro/nanostructures with sub-10 nm features is of great significance for advancing nanoscience and nanotechnology.While the capability of current complementary metal-oxide semiconductor(CMOS)chip manufacturing can produce structures on the sub-10 nm scale,many emerging applications,such as nano-optics,biosensing,and quantum devices,also require ultrasmall features down to single digital nanometers.In these emerging applications,CMOS-based manufacturing methods are currently not feasible or appropriate due to the considerations of usage cost,material compatibility,and exotic features.Therefore,several specific methods have been developed in the past decades for different applications.In this review,we attempt to give a systematic summary on sub-10 nm fabrication methods and their related applications.In the first and second parts,we give a brief introduction of the background of this research topic and explain why sub-10 nm fabrication is interesting from both scientific and technological perspectives.In the third part,we comprehensively summarize the fabrication methods and classify them into three main approaches,including lithographic,mechanics-enabled,and post-trimming processes.The fourth part discusses the applications of these processes in quantum devices,nano-optics,and high-performance sensing.Finally,a perspective is given to discuss the challenges and opportunities associated with this research topic.
文摘Directed self-assembly(DSA)emerges as one of the most promising new patterning techniques for single digit miniaturization and next generation lithography.DSA achieves high-resolution patterning by molecular assembly that circumvents the diffraction limit of conventional photolithography.Recently,the International Roadmap for Devices and Systems listed DSA as one of the advanced lithography techniques for the fabrication of 3-5 nm technology node devices.DSA can be combined with other lithography techniques,such as extreme ultra violet(EUV)and 193 nm immersion(193i),to further enhance the patterning resolution and the device density.So far,DSA has demonstrated its superior ability for the fabrication of nanoscale devices,such as fin field effect transistor and bit pattern media,offering a variety of configurations for high-density integration and low-cost manufacturing.Over 1 T in-2 device density can be achieved either by direct templating or coupled with nanoimprinting to improve the throughput.The development of high x block copolymer further enhances the patterning resolution of DSA.In addition to its superiority in high-resolution patterning,the implementation ofDSA on a 300 mm pivot line fully demonstrates its potential for large-scale,high-throughput,and cost-effective manufacturing in industrial environment.
基金Supported by the National Natural Science Foundation of China under Grant No 91536217the West Light Foundation of the Chinese Academy of Sciences under Grant No 2013ZD02the Youth Innovation Promotion Association of the Chinese Academy of Sciences under Grant No 2015334
文摘We present two cavity-stabilized lasers at 1555 nm, which are built to be the frequency source for a transportable photonic microwave generation system. The frequency instability reaches the thermal noise limit （7 ×10-16） of the 10-cm ultra-low expansion glass cavity at 1-10s averaging time and the beat signal of the two lasers reveals a remarkable linewidth of 185mHz.
基金the National Key Research and Development Program of China(Grant No.2016YFA0200504)the National Natural Science Foundation of China(Grant No.61927901)。
文摘A high quality epitaxial Si layer by molecular beam epitaxy(MBE)on Si(001)substrates was demonstrated to fabricate a channel with low density defects for high-performance Fin FET technology.In order to study the effects of fin width and crystallography orientation on the MBE behavior,a 30 nm thick Si layer was deposited on the top of an etched Si fin with different widths from 10 nm to 50 nm and orientations of 100 and 110.The result shows that a defect-free Si film was obtained on the fin by MBE,since the etching damage was confined in the bottom of the epitaxial layer.In addition,the vertical growth of the epitaxial Si layer was observed on sub-10 nm 100 Si fins,and this was explained by a kinetic mechanism.
文摘Under the condition of combined effects of group--velocitydispersion and self- phase modulation, the step Fourier method isused to simulate the propagation of initial chirped super-Gaussianpulses inside fiber. The initial chirp influences the shapes of superGaussian pulses in propagation process, and positive and negativechirps have different effects. For the existing of initial chirp, thesplits of pulses and the spreading speed move ahead and increase.When the amplitude of super-Gaussian pulses increases by 1.4 times,in the range of │C│<1.5, pulses can keep good shapes along theirpropagation distance.
基金supported by the National Natural Science Foundation of China[Grant Nos.51975127,U20A6004]the Guangdong-Hong Kong Technology Coopeartion[Grant No.GHP/112/19GD]from Hong Kong Innovation and Technology Commission+1 种基金Research and Development Program of Guangdong Province[Grant No.2020A0505140008]the Fund of Key-Area Research and Development Program of Guangdong Province[Grant No.2018B090906002]。
文摘Solid-state nanopores with controllable pore size and morphology have huge application potential.However,it has been very challenging to process sub-10 nm silicon nanopore arrays with high efficiency and high quality at low cost.In this study,a method combining metal-assisted chemical etching and machine learning is proposed to fabricate sub-10 nm nanopore arrays on silicon wafers with various dopant types and concentrations.Through a SVM algorithm,the relationship between the nanopore structures and the fabrication conditions,including the etching solution,etching time,dopant type,and concentration,was modeled and experimentally verified.Based on this,a processing parameter window for generating regular nanopore arrays on silicon wafers with variable doping types and concentrations was obtained.The proposed machine-learning-assisted etching method will provide a feasible and economical way to process high-quality silicon nanopores,nanostructures,and devices.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11404204 and 11447208the Key Project of Chinese Ministry of Education under Grant No 211025+1 种基金the Research Fund for the Doctoral Program of Higher Education of China under Grant No 20111404120004the Natural Science Foundation for Young Scientists of Shanxi Province under Grant No 2009021005
文摘The two-color circularly polarized pulses scheme was proposed to generate isolated attosecond pulses in our previous work [Phys. Rev. A 87 （2013） 043406], while the polarization of the attosecond pulse was not investigated. We show a supplementary explanation of this scheme and present another scheme to generate linear isolated attosecond pulses by combining a circularly polarized pulse with an elliptically polarized pulse. High-order harmonic generation and quantum path control are investigated to compare these two schemes. Both schemes can obtain supercontinuum spectra plateau from about 200eV to 550eV, which belong to the water window region. It is found that the latter scheme can clearly eliminate the short quantum path and extend the harmonic plateau. A linear isolated attosecond pulse with a duration of sub-6Oas can be generated by superposing a bandwidth of 70eV.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11674198 and 11874241)the Taishan Scholar Project of Shandong Province,China
文摘The molecular orientation created by laser fields is important for steering chemical reactions. In this paper, we propose a theoretical scheme to manipulate field-free molecular orientation by using an intense super-Gaussian laser pulse and a time-delayed terahertz half-cycle pulse(THz HCP). It is shown that the degree of field-free orientation can be doubled by the combined pulse with respect to the super-Gaussian pulse or THz HCP alone. Moreover, different laser intensities, carrier envelop phases, shape parameters, and time delays have great influence on the positive and negative orientations, with other conditions unchanged. Furthermore, it is indicated that the maximum degree and direction of molecular orientation can be precisely controlled by half of the duration of the super-Gaussian pulse. Finally, by adjusting the laser parameters of the super-Gaussian laser pulse and THz HCP, the optimal results of negative orientation and corresponding rotational populations are obtained at different temperatures of the molecular system.
