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面向CMOS图像传感器应用的列级模数转换器研究进展
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作者 廖文丽 张植潮 +2 位作者 张九龄 蔡铭嫣 陈铖颖 《半导体技术》 CAS 北大核心 2023年第11期961-971,共11页
随着有源像素工艺以及互补金属氧化物半导体(CMOS)集成电路技术迅速发展,CMOS图像传感器(CIS)朝着高分辨率、高动态范围、低功耗、小体积的方向不断发展,在数码相机、汽车驾驶、安防监控、医学等多个领域中逐渐取代原市场主流的电荷耦... 随着有源像素工艺以及互补金属氧化物半导体(CMOS)集成电路技术迅速发展,CMOS图像传感器(CIS)朝着高分辨率、高动态范围、低功耗、小体积的方向不断发展,在数码相机、汽车驾驶、安防监控、医学等多个领域中逐渐取代原市场主流的电荷耦合器件(CCD)图像传感器。模数转换器(ADC)作为模拟信号和数字信号的转换端口,是CMOS图像传感器中的重要组成部分,其性能的优劣直接决定了CMOS图像传感器的成像质量。对应用于CMOS图像传感器的模数转换器进行了综述,分析了几种主流架构的优缺点,阐述了面临的挑战以及解决方案,最后对未来的发展前景进行了展望。 展开更多
关键词 CMOS图像传感器(CIS) 模数转换器(ADC) 单斜(ss)ADC 逐次逼近寄存器(SAR)ADC 循环ADC Sigma-Delta ADC
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A Novel Fully-Depleted Dual-Gate MOSFET
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作者 张国和 邵志标 +1 位作者 韩彬 刘德瑞 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第9期1359-1363,共5页
A novel fully-depleted dual-gate MOSFET with a hetero-material gate and a lightly-doped drain is proposed. The hetero-material gate, which consists of a main gate and two side-gates,is used to control the surface pote... A novel fully-depleted dual-gate MOSFET with a hetero-material gate and a lightly-doped drain is proposed. The hetero-material gate, which consists of a main gate and two side-gates,is used to control the surface potential distribution. The fabrication process and the device characteristics are simulated with Tsuprem-4 and Medici separately. Compared to a common DG fully depleted SO1 MOSFET,the proposed device has much higher on/off current ratio and superior sub-threshold slope. The on/off current ratio is about 10^10 and the sub-threshold slope is nearly 60mV/dec under a 0.18μm process. 展开更多
关键词 hetero-material gate on/off current ratio sub-threshold slope SOI FET
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基于上限分析的空间变异土质边坡可靠度 被引量:8
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作者 孙志豪 谭晓慧 +2 位作者 孙志彬 林鑫 姚玉川 《岩土力学》 EI CAS CSCD 北大核心 2021年第12期3397-3406,共10页
空间变异性是土体的固有不确定性。采用随机场理论表示土体的空间变异性,通过Karhunen–Loève(KL)展开法进行随机场的离散。使用基于离散机构的边坡上限分析,在生成速度间断面时考虑空间各点的内摩擦角随机场离散结果,并联合使用... 空间变异性是土体的固有不确定性。采用随机场理论表示土体的空间变异性,通过Karhunen–Loève(KL)展开法进行随机场的离散。使用基于离散机构的边坡上限分析,在生成速度间断面时考虑空间各点的内摩擦角随机场离散结果,并联合使用强度折减法、二分法及序列二次规划法求解边坡的安全系数,采用一阶可靠度方法(FORM)和子集模拟(SS)进行边坡的可靠度分析。针对SS与强度折减法的特点,提出二者耦合的优化算法以提高计算效率。通过对某土质边坡的计算分析,阐明了基于KL展开法的FORM及SS在求解边坡可靠指标及失效后果的异同点,分析了土体强度参数变异系数对边坡可靠指标与失效后果的影响规律,为进行边坡的风险分析与防治提供了理论依据。 展开更多
关键词 土质边坡 上限分析 空间变异性 一阶可靠度 子集模拟
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Characteristics of a 0.1μm SOI Grooved Gate pMOSFET
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作者 邵红旭 孙宝刚 +1 位作者 吴峻峰 钟兴华 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第11期2080-2084,共5页
A 0. 1μm SOI grooved gate pMOSFET with 5.6nm gate oxide is fabricated and demonstrated. The groove depth is 180nm. The transfer characteristics and the output characteristics are shown. At Vds = -1. 5V,the drain satu... A 0. 1μm SOI grooved gate pMOSFET with 5.6nm gate oxide is fabricated and demonstrated. The groove depth is 180nm. The transfer characteristics and the output characteristics are shown. At Vds = -1. 5V,the drain saturation current is 380μA and the off-state leakage current is 1.9nA;the sub-threshold slope is 115mV/dec at Vds = -0. 1V and DIBL factor is 70. 7mV/V. The electrical characteristic comparison between the 0.1μm SOI groovedgate pMOSFET and the 0. 1μm bulk grooved gate one with the same process demonstrates that a 0. 1μm SOI grooved gate pMOSFET has better characteristics in current-driving capability and sub-threshold slope. 展开更多
关键词 SOI grooved gate pMOSFET sub-threshold slope
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护坡植物减缓地表径流效果研究 被引量:6
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作者 王慧子 徐得潜 +1 位作者 陈慧 王元立 《中国水土保持》 2013年第9期46-48,74,共4页
植物护坡不仅能够有效地防止坡面水土流失、减缓地表径流,而且能够恢复已破坏的植被,美化环境。在介绍护坡植物减缓地表径流作用机理的基础上,选取麦冬、香根草、狗牙根3种植物作为护坡植物进行模拟降雨冲刷试验。结果表明不同植物... 植物护坡不仅能够有效地防止坡面水土流失、减缓地表径流,而且能够恢复已破坏的植被,美化环境。在介绍护坡植物减缓地表径流作用机理的基础上,选取麦冬、香根草、狗牙根3种植物作为护坡植物进行模拟降雨冲刷试验。结果表明不同植物对降雨径流携带的泥沙等悬浮固体污染物的拦截效果存在一定差异:麦冬坡的SS去除率为63.38%-75.70%,香根草坡为58.38%~68.11%,狗牙根坡为61.80%-70.48%,砼坡为30.61%~38.73%,3种植物护坡拦截SS效果的大小排序为麦冬〉狗牙根〉香根草。坡度大小对SS的拦截效果也有一定的影响,坡度越小拦截效果就越好。狗牙根更适宜作为首选的护坡植物。 展开更多
关键词 护坡植物 地表径流 水土保持效果 ss去除率 狗牙根
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Numerical study of the sub-threshold slope in T-CNFETs
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作者 周海亮 郝跃 张民选 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第9期32-36,共5页
The most attractive merit of tunneling carbon nanotube field effect transistors(T-CNFETs) is the ultra-small inverse sub-threshold slope.In order to obtain as small an average sub-threshold slope as possible,several... The most attractive merit of tunneling carbon nanotube field effect transistors(T-CNFETs) is the ultra-small inverse sub-threshold slope.In order to obtain as small an average sub-threshold slope as possible,several effective approaches have been proposed based on a numerical insight into the working mechanism of T-CNFETs:tuning the doping level of source/drain leads,minimizing the quantum capacitance value via tuning the bias condition or increasing the insulator capacitance,and adopting a staircase doping strategy in the drain lead.Non-equilibrium Green's function based simulation results show that all these approaches can contribute to a smaller average inverse sub-threshold slope, which is quite desirable in high-frequency or low-power applications. 展开更多
关键词 sub-threshold slope T-CNFETs quantum capacitance BTBT NEGF
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Nanoscale Ⅲ-Ⅴ on Si-based junctionless tunnel transistor for EHF band applications
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作者 Yogesh Goswami Pranav Asthana Bahniman Ghosh 《Journal of Semiconductors》 EI CAS CSCD 2017年第5期42-48,共7页
A single gate Ⅲ-Ⅴ junctionless tunnel field effect transistor(SG-JLTFET) has been reported which shows excellent dc characteristics at low power supply operation.This device has a thin uniformly n-type doped chann... A single gate Ⅲ-Ⅴ junctionless tunnel field effect transistor(SG-JLTFET) has been reported which shows excellent dc characteristics at low power supply operation.This device has a thin uniformly n-type doped channel of GaSb i.e.gallium antimonide which is grown epitaxially over silicon substrate.The DC performance parameters such as I(on),I(on)/I(off),average and point subthreshold slope as well as device parameters for analog applications viz.transconductance gm,transconductance generation efficiency gm/ID,various capacitances and the unity gain frequency fT are studied using a device simulator.Along with examining its endurance to short channel effects,the performances are also compared with a Silicon Dual Gate Junctionless Tunnel FET(DG-JLTFET).The DC and small signal analog performance reflects that GaSb SG-JLTFET has immense purview for extreme high-frequency and low-power applications. 展开更多
关键词 single gate junctionless tunnel field effect transistor (SG JL-TFET) gallium antimonide band-to-band tunnelling sub-threshold slope (ss
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Temperature effect on hetero structure junctionless tunnel FET 被引量:2
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作者 Shiromani Balmukund Rahi Bahniman Ghosh Bhupesh Bishnoi 《Journal of Semiconductors》 EI CAS CSCD 2015年第3期55-59,共5页
For the first time, we investigate the temperature effect on AIGaAs/Si based hetero-structure junction- less double gate tunnel field effect transistor. Since junctionless tunnel FET is an alternative substitute devic... For the first time, we investigate the temperature effect on AIGaAs/Si based hetero-structure junction- less double gate tunnel field effect transistor. Since junctionless tunnel FET is an alternative substitute device for ultra scaled deep-submicron CMOS technology, having very good device characteristics such as an improved sub- threshold slope (〈 60 mV/decade at 300 K) and very small static leakage currents. The improved subthreshold slope and static leakage current confirms that it will be helpful for the development of future low power switching circuits. The 2-D computer based simulation results show that OFF-state leakage current is almost temperature independent for the proposed device structure. 展开更多
关键词 TFET subthreshold slope (ss temperature effect band-to-band tunneling
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高速公路隧道长大下坡路段驾驶员视错觉改善研究 被引量:8
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作者 杨理波 杜志刚 +2 位作者 孟爽 余昕宇 向一鸣 《公路》 北大核心 2019年第3期169-175,共7页
为了改善高速公路隧道长大下坡路段驾驶员的坡度错觉和速度错觉,进一步提升隧道长大下坡路段的交通安全行车水平。首先,研究中提出通过低频大尺度反光环、中频中尺度倾斜反光条和高频小尺度猫眼道钉等视觉信息组合对隧道长大下坡路段不... 为了改善高速公路隧道长大下坡路段驾驶员的坡度错觉和速度错觉,进一步提升隧道长大下坡路段的交通安全行车水平。首先,研究中提出通过低频大尺度反光环、中频中尺度倾斜反光条和高频小尺度猫眼道钉等视觉信息组合对隧道长大下坡路段不良的行车环境进行改善设计;其次,基于仿真驾驶模拟器和E-prime软件平台进行室内驾驶仿真模拟试验,并测取不同试验场景条件下被试的坡度判断准确率和主观等同速度。试验结果表明:在50%的开灯率水平下,在隧道侧壁布设倾斜反光条能有效提高驾驶员的坡度感知能力,其中,反光条的倾斜角度和布设间距对于驾驶员的坡度感知能力具有显著影响,高度对于坡度感知能力的影响不显著,且在高度为1.8m、倾斜角度60°和布设间距30m的条件下,驾驶员的坡度感知能力最佳,其坡度判断准确率为96.67%;同时,相比于单一中频中尺度反光条,通过增设低频大尺度反光环和高频小尺度猫眼道钉的改善方法,能够更有效地提高驾驶员的速度感知能力和降低反应时间,更有利于提高隧道长大下坡路段的行车安全水平。 展开更多
关键词 隧道长大下坡路段 坡度错觉 速度错觉 坡度判断准确率 主观等同速度
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Performance optimization of MOS-like carbon nanotube-FETs with realistic source/drain contacts based on electrostatic doping
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作者 周海亮 郝跃 张民选 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第12期43-48,共6页
Due to carrier band-to-band-tunneling (BTBT) through channel-source/drain contacts, conventional MOS- like Carbon Nanotube Field Effect Transistors (C-CNFETs) suffer from ambipolar conductance, which deteriorates ... Due to carrier band-to-band-tunneling (BTBT) through channel-source/drain contacts, conventional MOS- like Carbon Nanotube Field Effect Transistors (C-CNFETs) suffer from ambipolar conductance, which deteriorates the device performance greatly. In order to reduce such ambipolar behavior, a novel device structure based on electrostatic doping is proposed and all kinds of source/drain contacting conditions are considered in this paper. The non-equilibrium Green's function (NEGF) formalism based simulation results show that, with proper choice of tuning voltage, such electrostatic doping strategy can not only reduce the ambipolar conductance but also improve the sub-threshold perfor- mance, even with source/drain contacts being of Schottky type. And these are both quite desirable in circuit design to reduce the system power and improve the frequency as well. Further study reveals that the performance of the proposed design depends strongly on the choice of tuning voltage value, which should be paid much attention to obtain a proper trade-off between power and speed in application. 展开更多
关键词 sub-threshold slope ambipolar conductance electrostatic doping BTBT Schottky contact CNFET
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Design and optimization analysis of dual material gate on DG-IMOS
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作者 Sarabdeep Singh Ashish Ramant Naveen Kumar 《Journal of Semiconductors》 EI CAS CSCD 2017年第12期48-55,共8页
An impact ionization MOSFET (IMOS) is evolved for overcoming the constraint of less than 60 mV/decade sub-threshold slope (SS) of conventional MOSFET at room temperature. In this work, first, the device performanc... An impact ionization MOSFET (IMOS) is evolved for overcoming the constraint of less than 60 mV/decade sub-threshold slope (SS) of conventional MOSFET at room temperature. In this work, first, the device performance of the p-type double gate impact ionization MOSFET (DG-IMOS) is optimized by adjusting the device design parameters. The adjusted parameters are ratio of gate and intrinsic length, gate dielectric thickness and gate work function. Secondly, the DMG (dual material gate) DG-IMOS is proposed and investigated. This DMG DG-IMOS is further optimized to obtain the best possible performance parameters. Simulation results reveal that DMG DG-IMOS when compared to DG-IMOS, shows better IoN, ION/IoFF ratio, and RF parameters. Results show that by properly tuning the lengths of two materials at a ratio of 1.5 in DMG DG-IMOS, optimized perform- ance is achieved including ION/IoFF ratio of 2.87 × 10^9 A/μm with/ON as 11.87 × 10^-4 A/μm and transconductance of 1.06× 10^-3 S/μm. It is analyzed that length of drain side material should be greater than the length of source side material to attain the higher transconductance in DMG DG-IMOS. 展开更多
关键词 impact ionization MOSFET (IMOS) avalanche breakdown sub-threshold slope dual material gate (DMG) BIOSENSOR
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