期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Properties of Reactive Magnetron Sputtered ITO Films without in-situ Substrate Heating and Post-deposition Annealing 被引量:4
1
作者 Meng CHEN, Xuedong BAI, Jun GONG, Chao SUN, Rongfang HUANG and Lishi WEN (Institute of Metal Research, the Chinese Academy of Sciences, Shenyang 110015, China) 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2000年第3期281-285,共5页
Indium tin oxide (ITO) films were prepared on polyester, Si and glass substrate with relatively high deposition rate of above 0.9 nm/s by DC reactive magnetron sputtering technique at the sputtering pressure of 0.06 P... Indium tin oxide (ITO) films were prepared on polyester, Si and glass substrate with relatively high deposition rate of above 0.9 nm/s by DC reactive magnetron sputtering technique at the sputtering pressure of 0.06 Pa system, respectively. The dependence of resistivity on deposition parameters, such as deposition rate, target-to-substrate distance (TSD), oxygen flow rate and sputtering time (thickness), has been investigated, together with the structural and the optical properties. It was revealed that all ITO films exhibited lattice expansion. The resistivity of ITO thin films shows significant substrate effect: much lower resistivity and broader process window have been reproducibly achieved for the deposition of ITO films onto polyester rather than those prepared on both Si and glass substrates. The films with resistivity of as low as 4.23 x 10^-4 Ω.cm and average transmittance of ~78% at wavelength of 400~700 nm have been achieved for the films on polyester at room temperature. 展开更多
关键词 ITO Properties of Reactive Magnetron Sputtered ITO Films without in-situ substrate Heating and Post-deposition Annealing TSD rate than
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部