ITO thin films were grown on PC（polycarbonate）, PMMA（polymethyl methacrylate） and glass substrates by r.f. magnetron sputtering. The electrical, structural and chemical characteristics of ITO films were analyzed b...ITO thin films were grown on PC（polycarbonate）, PMMA（polymethyl methacrylate） and glass substrates by r.f. magnetron sputtering. The electrical, structural and chemical characteristics of ITO films were analyzed by the Hall Technique, X-ray diffraction, and X-ray photoelectron spectroscopy. XPS studies suggest that all the ITO films consist of crystalline and amorphous phases. The degree of crystallinity increases from less than 45% to more than 90% when the substrate temperature increases from 80 to 300 ℃. The In and Sn exist in the chemical state of In^3＋ and Sn^4＋, respectively, independent of substrate type and temperature. The enrichment of Sn on surface and In in body of ITO films are also revealed. And, the oxygen deficient regions exist both in surface layer and film body. For ITO films deposited under 180 ℃ , the carrier concentration are mainly provided by oxygen vacancies, and the dominant electron carrier scattering mechanism is grain boundary scattering between the crystal and the amorphous grain. For ITO films deposited over 180 ℃, the carrier concentration are provided by tin doping, and the dominant scattering mechanism transforms from grain boundary scattering between the crystal grains to ionized impurity scattering with increasing deposition temperature.展开更多
This paper presents the substrate temperature dependence of opto-electrical properties for transparent conducting Al-doped ZnO films prepared on polyisocyanate (PI) substrates by r f sputtering. Polycrystalline ZnO:Al...This paper presents the substrate temperature dependence of opto-electrical properties for transparent conducting Al-doped ZnO films prepared on polyisocyanate (PI) substrates by r f sputtering. Polycrystalline ZnO:Al films with good adherence to the substrates having a (002) preferred orientation have been obtained with resistivities in the range from 4.1×10-3to 5.3×104 Ωcm, carrier densities more than 2.6×1020 cm-3 and Hall mobilities between 5.78 and 13.11 cm2/V/s for films. The average transmittance reaches 75% in the visible spectrum. The quality of obtained films depends on substrate temperature during film fabrication.展开更多
Ta-doped titanium dioxide films are deposited on fused quartz substrates using the rf magnetron sputtering technique at different substrate temperatures. After post-annealing at 550℃ in a vacuum, all the films are cr...Ta-doped titanium dioxide films are deposited on fused quartz substrates using the rf magnetron sputtering technique at different substrate temperatures. After post-annealing at 550℃ in a vacuum, all the films are crystallized into the polycrystalline anatase TiO2 structure. The effects of substrate temperature from room temperature up to 350℃ on the structure, morphology, and photoelectric properties of Ta-doped titanium dioxide films are analyzed. The average transmittance in the visible region（400-800 nm） of all films is more than 73%.The resistivity decreases firstly and then increases moderately with the increasing substrate temperature. The polycrystalline film deposited at 150℃ exhibits a lowest resistivity of 7.7 × 10^-4Ω·cm with the highest carrier density of 1.1×10^21 cm^-3 and the Hall mobility of 7.4 cm^2·V^-1s^-1.展开更多
The electric conductivity of gabbro has been measured at 1.0-2.0 GPa and 320-700℃, and the conduction mechanism has been analyzed in terms of the impedance spectra. Experimental results indicated that the electric co...The electric conductivity of gabbro has been measured at 1.0-2.0 GPa and 320-700℃, and the conduction mechanism has been analyzed in terms of the impedance spectra. Experimental results indicated that the electric conductivity depends on the frequency of alternative current. Impedance arcs representing the conduction mechanism of grain interiors are displayed in the complex impedance plane, and the mechanism is dominated at high pressure. These arcs occur over the range of 10\+2-k×10\+5 Hz (k is the positive integer from 1 to 9). On the basis of our results and previous work, it is concluded that gabbro cannot form any high conductivity layer (HCL) in the middle\|lower crust.展开更多
Ruddlesden–Popper iridium oxides have attracted considerable interest because of the many proposed novel quantum states that arise from the large spin–orbit coupling of the heavy iridium atoms in them.A prominent ex...Ruddlesden–Popper iridium oxides have attracted considerable interest because of the many proposed novel quantum states that arise from the large spin–orbit coupling of the heavy iridium atoms in them.A prominent example is the single layer Sr2IrO4, in which superconductivity has been proposed under electron doping.However, the synthesis of Sr2IrO4 high quality thin films has been a huge challenge due to the easy formation of impurities associated with different numbers of SrO layers.Thus techniques to optimize the growth of pure phase Sr2IrO4 are urgently required.Here we report the deposition of high quality Sr2IrO4 thin films on both insulating SrTiO3 and conducting SrTiO3:Nb substrates using pulsed laser deposition assisted with reflective high-energy electron diffraction.The optimal deposition temperature of Sr2IrO4 epitaxial films on SrTiO3:Nb substrates is about 90℃ lower than that on SrTiO3 substrates.The electrical transports of high quality Sr2IrO4 films are measured, which follow the three-dimensional Mott variable-range hopping model.The film magnetizations are measured, which show weak ferromagnetism below ~240 K with a saturation magnetization of~ 0.2 μB/Ir at 5 K.This study provides applicable methods to prepare high quality 5 d Sr2IrO4 epitaxial films, which could be extended to other Ruddlesden–Popper phases and potentially help the future study of exotic quantum phenomena in them.展开更多
In this study,the influence of substrate temperature on properties of Al-N co-doped p-type ZnO films is explored.Benefitting from the high ionization rate in high-power impulsed magnetron sputtering,the concentration ...In this study,the influence of substrate temperature on properties of Al-N co-doped p-type ZnO films is explored.Benefitting from the high ionization rate in high-power impulsed magnetron sputtering,the concentration of ionized nitrogen N+and ionized zinc Zn+were increased,which promoted the formation of ZnO films and lowered the necessary substrate temperature.After optimization,a co-doped p-type ZnO thin film with a resistivity lower than 0.35Ωcm and a hole concentration higher than 5.34×10^(18)cm^(-3)is grown at 280°C.X-ray diffraction results confirm that Al-N co-doping does not destruct the ZnO wurtzite structure.X-ray photoelectron spectroscopy demonstrates that the presence of Al promotes the formation of acceptor(No)defects in ZnO films,and ensures the role of Al in stabilizing p-type ZnO.展开更多
Transparent conducting Co doped ZnO thin films have been fabricated by Ultrasonic spray. The thin films were deposited at three different substrate temperatures of 300, 350 and 400 ℃. The obtained films had a hexagon...Transparent conducting Co doped ZnO thin films have been fabricated by Ultrasonic spray. The thin films were deposited at three different substrate temperatures of 300, 350 and 400 ℃. The obtained films had a hexagonal wurtzite structure with a strong （002） preferred orientation. The maximum crystallite size value of the film deposited at 350 ℃ is 55.46 nm. Spectrophotometer （UV-vis） of a Co doped ZnO film deposited at 350 ℃ shows an average transmittance of about 90%. The band gap energy increased from 3.351 to 3.362 eV when the substrate temperature increased from 300 to 350 ℃. The electrical conductivity of the films deposited at 300, 350 and 400 ℃ were 7.424, 7.547 and 6.743 （Ω·cm）^-1 respectively. The maximum activation energy value of the films at 350 ℃ was 1.28 eV, indicating that the films exhibit a n-type semiconducting nature.展开更多
文摘ITO thin films were grown on PC（polycarbonate）, PMMA（polymethyl methacrylate） and glass substrates by r.f. magnetron sputtering. The electrical, structural and chemical characteristics of ITO films were analyzed by the Hall Technique, X-ray diffraction, and X-ray photoelectron spectroscopy. XPS studies suggest that all the ITO films consist of crystalline and amorphous phases. The degree of crystallinity increases from less than 45% to more than 90% when the substrate temperature increases from 80 to 300 ℃. The In and Sn exist in the chemical state of In^3＋ and Sn^4＋, respectively, independent of substrate type and temperature. The enrichment of Sn on surface and In in body of ITO films are also revealed. And, the oxygen deficient regions exist both in surface layer and film body. For ITO films deposited under 180 ℃ , the carrier concentration are mainly provided by oxygen vacancies, and the dominant electron carrier scattering mechanism is grain boundary scattering between the crystal and the amorphous grain. For ITO films deposited over 180 ℃, the carrier concentration are provided by tin doping, and the dominant scattering mechanism transforms from grain boundary scattering between the crystal grains to ionized impurity scattering with increasing deposition temperature.
基金This work is supported by the National Natural Srience Foundation of China(No.69876025 and No.60076006)Science and Technology Committee of Shandong Province and the Natural Science Foundation of Shandong Province.
文摘This paper presents the substrate temperature dependence of opto-electrical properties for transparent conducting Al-doped ZnO films prepared on polyisocyanate (PI) substrates by r f sputtering. Polycrystalline ZnO:Al films with good adherence to the substrates having a (002) preferred orientation have been obtained with resistivities in the range from 4.1×10-3to 5.3×104 Ωcm, carrier densities more than 2.6×1020 cm-3 and Hall mobilities between 5.78 and 13.11 cm2/V/s for films. The average transmittance reaches 75% in the visible spectrum. The quality of obtained films depends on substrate temperature during film fabrication.
基金Supported by the National Natural Science Foundation of China under Grant No 11374114
文摘Ta-doped titanium dioxide films are deposited on fused quartz substrates using the rf magnetron sputtering technique at different substrate temperatures. After post-annealing at 550℃ in a vacuum, all the films are crystallized into the polycrystalline anatase TiO2 structure. The effects of substrate temperature from room temperature up to 350℃ on the structure, morphology, and photoelectric properties of Ta-doped titanium dioxide films are analyzed. The average transmittance in the visible region（400-800 nm） of all films is more than 73%.The resistivity decreases firstly and then increases moderately with the increasing substrate temperature. The polycrystalline film deposited at 150℃ exhibits a lowest resistivity of 7.7 × 10^-4Ω·cm with the highest carrier density of 1.1×10^21 cm^-3 and the Hall mobility of 7.4 cm^2·V^-1s^-1.
文摘The electric conductivity of gabbro has been measured at 1.0-2.0 GPa and 320-700℃, and the conduction mechanism has been analyzed in terms of the impedance spectra. Experimental results indicated that the electric conductivity depends on the frequency of alternative current. Impedance arcs representing the conduction mechanism of grain interiors are displayed in the complex impedance plane, and the mechanism is dominated at high pressure. These arcs occur over the range of 10\+2-k×10\+5 Hz (k is the positive integer from 1 to 9). On the basis of our results and previous work, it is concluded that gabbro cannot form any high conductivity layer (HCL) in the middle\|lower crust.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51627901 and 11574287)the National Key Research and Development Program of China(Grant No.2016YFA0401004)+1 种基金Hefei Science Center-Chinese Academy of Sciences(Grant No.2016HSC-IU004)the support of the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2016389)
文摘Ruddlesden–Popper iridium oxides have attracted considerable interest because of the many proposed novel quantum states that arise from the large spin–orbit coupling of the heavy iridium atoms in them.A prominent example is the single layer Sr2IrO4, in which superconductivity has been proposed under electron doping.However, the synthesis of Sr2IrO4 high quality thin films has been a huge challenge due to the easy formation of impurities associated with different numbers of SrO layers.Thus techniques to optimize the growth of pure phase Sr2IrO4 are urgently required.Here we report the deposition of high quality Sr2IrO4 thin films on both insulating SrTiO3 and conducting SrTiO3:Nb substrates using pulsed laser deposition assisted with reflective high-energy electron diffraction.The optimal deposition temperature of Sr2IrO4 epitaxial films on SrTiO3:Nb substrates is about 90℃ lower than that on SrTiO3 substrates.The electrical transports of high quality Sr2IrO4 films are measured, which follow the three-dimensional Mott variable-range hopping model.The film magnetizations are measured, which show weak ferromagnetism below ~240 K with a saturation magnetization of~ 0.2 μB/Ir at 5 K.This study provides applicable methods to prepare high quality 5 d Sr2IrO4 epitaxial films, which could be extended to other Ruddlesden–Popper phases and potentially help the future study of exotic quantum phenomena in them.
基金supported by National Natural Science Foundation of China(Nos.11875090,12075032,11775028,11875088,11974048)Beijing Municipal National Science Foundation(Nos.1192008,KZ202010015022)BIGC(Nos.Ea201901,Ee202001)。
文摘In this study,the influence of substrate temperature on properties of Al-N co-doped p-type ZnO films is explored.Benefitting from the high ionization rate in high-power impulsed magnetron sputtering,the concentration of ionized nitrogen N+and ionized zinc Zn+were increased,which promoted the formation of ZnO films and lowered the necessary substrate temperature.After optimization,a co-doped p-type ZnO thin film with a resistivity lower than 0.35Ωcm and a hole concentration higher than 5.34×10^(18)cm^(-3)is grown at 280°C.X-ray diffraction results confirm that Al-N co-doping does not destruct the ZnO wurtzite structure.X-ray photoelectron spectroscopy demonstrates that the presence of Al promotes the formation of acceptor(No)defects in ZnO films,and ensures the role of Al in stabilizing p-type ZnO.
文摘Transparent conducting Co doped ZnO thin films have been fabricated by Ultrasonic spray. The thin films were deposited at three different substrate temperatures of 300, 350 and 400 ℃. The obtained films had a hexagonal wurtzite structure with a strong （002） preferred orientation. The maximum crystallite size value of the film deposited at 350 ℃ is 55.46 nm. Spectrophotometer （UV-vis） of a Co doped ZnO film deposited at 350 ℃ shows an average transmittance of about 90%. The band gap energy increased from 3.351 to 3.362 eV when the substrate temperature increased from 300 to 350 ℃. The electrical conductivity of the films deposited at 300, 350 and 400 ℃ were 7.424, 7.547 and 6.743 （Ω·cm）^-1 respectively. The maximum activation energy value of the films at 350 ℃ was 1.28 eV, indicating that the films exhibit a n-type semiconducting nature.
