Multicomponent oxide(Ga_(x)In_(1−x))_(2)O_(3)films are prepared on(0001)sapphire substrates to realize a tunable band-gap by magnetron sputtering technology followed by thermal annealing.The optical properties and ban...Multicomponent oxide(Ga_(x)In_(1−x))_(2)O_(3)films are prepared on(0001)sapphire substrates to realize a tunable band-gap by magnetron sputtering technology followed by thermal annealing.The optical properties and band structure evolution over the whole range of compositions in ternary compounds(Ga_(x)In_(1−x))_(2)O_(3)are investigated in detail.The X-ray diffraction spectra clearly indicate that(Ga_(x)In_(1−x))_(2)O_(3)films with Ga content varying from 0.11 to 0.55 have both cubic and monoclinic structures,and that for films with Ga content higher than 0.74,only the monoclinic structure appears.The transmittance of all films is greater than 86%in the visible range with sharp absorption edges and clear fringes.In addition,a blue shift of ultraviolet absorption edges from 380 to 250 nm is noted with increasing Ga content,indicating increasing band-gap energy from 3.61 to 4.64 eV.The experimental results lay a foundation for the application of transparent conductive compound(Ga_(x)In_(1−x))_(2)O_(3)thin films in photoelectric and photovoltaic industry,especially in display,light-emitting diode,and solar cell applications.展开更多
基金Project supported by the National Natural Science Foundation of China(Nos.61764001,61665001,51665009,11965009,61874036,and 61805053)the Guangxi Science and Technology Base and Talent Special Project,China(Nos.AD18281084,AD18281030,AD18281034,and AD18281037)+3 种基金the Guangxi Key Laboratory of Precision Navigation Technology and Application,China(No.DH201808)the One Hundred Person Project of Guangxi as well as the Thousands of Key Teacher Training Project of Guangxi Education Department,Chinathe Innovation Project of Guilin University of Electronic Technology Graduate Education,China(No.2019YCXS021)the Natural Science Foundation of Shanghai,China(No.19ZR1420100)。
文摘Multicomponent oxide(Ga_(x)In_(1−x))_(2)O_(3)films are prepared on(0001)sapphire substrates to realize a tunable band-gap by magnetron sputtering technology followed by thermal annealing.The optical properties and band structure evolution over the whole range of compositions in ternary compounds(Ga_(x)In_(1−x))_(2)O_(3)are investigated in detail.The X-ray diffraction spectra clearly indicate that(Ga_(x)In_(1−x))_(2)O_(3)films with Ga content varying from 0.11 to 0.55 have both cubic and monoclinic structures,and that for films with Ga content higher than 0.74,only the monoclinic structure appears.The transmittance of all films is greater than 86%in the visible range with sharp absorption edges and clear fringes.In addition,a blue shift of ultraviolet absorption edges from 380 to 250 nm is noted with increasing Ga content,indicating increasing band-gap energy from 3.61 to 4.64 eV.The experimental results lay a foundation for the application of transparent conductive compound(Ga_(x)In_(1−x))_(2)O_(3)thin films in photoelectric and photovoltaic industry,especially in display,light-emitting diode,and solar cell applications.
