A High-Efficiency Broadband Superconducting Nanowire Single-Photon Detector with a Composite Optical Structure

Superconducting nanowire single-photon detectors （SNSPDs） with a composite optical structure composed of phase-grating and optical cavity structures are designed to enhance both the system detection efficiency and the response bandwidth. Numerical simulation by the finite-difference time-domain method shows that the photon absorption capacity of SNSPDs with a composite optical structure can be enhanced significantly by adjusting the parameters of the phase-grating and optical cavity structures at multiple frequency bands. The absorption capacity of the superconducting nanowires reaches 70%, 72%, 60.73%, 61.7%, 41.2%, and 46.5% at wavelengths of 684, 850, 732, 924, 1256, and 1426nm, respectively. The use of a composite optical structure reduces the total filling factor of superconducting nanowires to only 0.25, decreases the kinetic inductance of SNSPDs, and improves the count rates.

Wavelength dependence of intrinsic detection efficiency of NbN superconducting nanowire single-photon detector

Superconducting nanowire single-photon detectors(SNSPDs) have attracted considerable attention owing to their excellent detection performance;however, the underlying physics of the detection process is still unclear.In this study, we investigate the wavelength dependence of the intrinsic detection efficiency(IDE) for NbN SNSPDs.We fabricate various NbN SNSPDs with linewidths ranging from 30 nm to 140 nm.Then, for each detector, the IDE curves as a function of bias current for different incident photon wavelengths of 510–1700 nm are obtained.From the IDE curves, the relations between photon energy and bias current at a certain IDE are extracted.The results exhibit clear nonlinear energy–current relations for the NbN detectors, indicating that a detection model only considering quasiparticle diffusion is unsuitable for the meander-type NbN-based SNSPDs.Our work provides additional experimental data on SNSPD detection mechanism and may serve as an interesting reference for further investigation.

Large-inductance superconducting microstrip photon detector enabling 10 photon-number resolution

Efficient and precise photon-number-resolving detectors are essential for optical quantum information science.Despite this,very few detectors have been able to distinguish photon numbers with both high fidelity and a large dynamic range,all while maintaining high speed and high timing precision.Superconducting nanostrip-based detectors excel at counting single photons efficiently and rapidly,but face challenges in balancing dynamic range and fidelity.Here,we have pioneered the demonstration of 10 true photon-number resolution using a superconducting microstrip detector,with readout fidelity reaching an impressive 98%and 90%for 4-photon and 6-photon events,respectively.Furthermore,our proposed dual-channel timing setup drastically reduces the amount of data acquisition by 3 orders of magnitude,allowing for real-time photon-number readout.We then demonstrate the utility of our scheme by implementing a quantum random-number generator based on sampling the parity of a coherent state,which guarantees inherent unbiasedness,robustness against experimental imperfections and environmental noise,as well as invulnerability to eavesdropping.Our solution boasts high fidelity,a large dynamic range,and real-time characterization for photon-number resolution and simplicity with respect to device structure,fabrication,and readout,which may provide a promising avenue towards optical quantum information science.

Superconducting single-photon detectors integrated with diamond nanophotonic circuits

Photonic quantum technologies hold promise to repeat the success of integrated nanophotonic circuits in non-classical applications.Using linear optical elements,quantum optical computations can be performed with integrated optical circuits and can therefore overcome the existing limitations in terms of scalability.In addition to passive optical devices for realizing photonic quantum gates,active elements,such as single-photon sources and single-photon detectors,are essential ingredients for future optical quantum circuits.Material systems that allow for the monolithic integration of all components are particularly attractive,including III-V semiconductors,silicon and diamond.Here,we demonstrate nanophotonic integrated circuits made from high-quality polycrystalline diamond thin films in combination with on-chip single-photon detectors.By using superconducting nanowires that are coupled evanescently to traveling waves,we achieve high detection efficiencies of up to 66%as well as low dark count rates and a timing resolution of 190 ps.Our devices are fully scalable and hold promise for functional diamond photonic quantum devices.

SSPD的低抖动SFQ信号读数

运用单磁通量量子(SFQ)读取技术的超导单光子探测器(SSPD)可以实现低抖动信号的读出。通过优化SFQ读出电路的电路参数,输入电流灵敏度被改善到10μA以下,且该结果比SSPD典型的临界电流小。实验使用脉冲发生器作为输入脉冲源,结果显示测出的SFQ读出电路的抖动值远低于目前测量装置系统超过15μA的抖动电流值。SSPD连接到SFQ读出电路的测量抖动值在37 ps的半高全宽(FWHM)时的SSPD偏置电流约为18μA,这是对传统的没有SFQ读出电路,抖动为67 ps的FWHM的显著提高。

Wideband cryogenic amplifier for a superconducting nanowire single-photon detector

We present a low-power inductorless wideband differential cryogenic amplifier using a 0.13-μm Si Ge Bi CMOS process for a superconducting nanowire single-photon detector(SNSPD).With a shunt-shunt feedback and capacitive coupling structure,theoretical analysis and simulations were undertaken,highlighting the relationship of the amplifier gain with the tunable design parameters of the circuit.In this way,the design and optimization flexibility can be increased,and a required gain can be achieved even without an accurate cryogenic device model.To realize a flat terminal impedance over the frequency of interest,an RC shunt compensation structure was employed,improving the amplifier’s closed-loop stability and suppressing the amplifier overshoot.The S-parameters and transient performance were measured at room temperature(300 K)and cryogenic temperature(4.2 K).With good input and output matching,the measurement results showed that the amplifier achieved a 21-d B gain with a 3-d B bandwidth of 1.13 GHz at 300 K.At 4.2 K,the gain of the amplifier can be tuned from 15 to 24 d B,achieving a 3-d B bandwidth spanning from 120 k Hz to 1.3 GHz and consuming only 3.1 m W.Excluding the chip pads,the amplifier chip core area was only about 0.073 mm^(2).

Geometric origin of intrinsic dark counts in superconducting nanowire single-photon detectors

The dark count is one of the key physical issues for superconducting nanowire single-photon detectors(SNSPDs)that limits various applications for optical quantum information and classical optics.When the bias current approaches the switching current of SNSPDs,the dark count is actually dominated by the intrinsic dark counts(iDCs).However,the origin of iDCs and its relation to constrictions remains unclear for practical SNSPDs.We herein systematically characterize the iDCs of the SNSPDs with and without artificial geometric constrictions by applying the differential readout method.For these devices with constrictions,we have observed distinct Gaussian distributions in the temporal distribution of iDCs,in which the time difference between the distributions is consistent with the geometric distance between constrictions,and the rates of iDCs produced by each constriction are in good agreement with constrictions'widths.With respect to practical SNSPDs,surprisingly,we also observe several Gaussian distributions in the temporal domain and it shows no significant dependence on the devices’sizes,demonstrating that the iDCs of SNSPDs are mainly dominated by a few specific constrictions.