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An analytical model of the electric field distributions of buried superjunction devices
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作者 黄海猛 陈星弼 《Journal of Semiconductors》 EI CAS CSCD 2013年第6期68-71,共4页
An analytical model of the electric field distributions of buried superjunction structures,based on the charge superposition method and Green's function approach,is derived.An accurate approximation of the exact anal... An analytical model of the electric field distributions of buried superjunction structures,based on the charge superposition method and Green's function approach,is derived.An accurate approximation of the exact analytical model of the vertical electric field is also proposed and demonstrated by numerical simulation.The influence of the dimension and doping concentration of each layer on the electric field is discussed in detail,and the breakdown voltage is demonstrated by simulations. 展开更多
关键词 analytical model superjunction devices electric field distributions breakdown voltage
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