Moiré superlattices arising from growth induced by screw dislocations in layered materials

Moiré superlattices(MSLs) are modulated structures produced from homogeneous or heterogeneous two-dimensional layers stacked with a twist angle and/or lattice mismatch. Enriching the methods for fabricating MSL and realizing the unique emergent properties are key challenges in its investigation. Here we recommend that the spiral dislocation driven growth is another optional method for the preparation of high quality MSL samples. The spiral structure stabilizes the constant out-of-plane lattice distance, causing the variations in electronic and optical properties. Taking SnS_(2) MSL as an example, we find prominent properties including large band gap reduction(~ 0.4 e V) and enhanced optical activity. Firstprinciples calculations reveal that these unusual properties can be ascribed to the locally enhanced interlayer interaction associated with the Moiré potential modulation. We believe that the spiral dislocation driven growth would be a powerful method to expand the MSL family and broaden their scope of application.

Comprehensive study of the ultrafast photoexcited carrier dynamics in Sb_(2)Te_(3)–GeTe superlattices

Chalcogenide superlattices Sb_(2)Te_(3)-GeTe is a candidate for interfacial phase-change memory(iPCM) data storage devices.By employing terahertz emission spectroscopy and the transient reflectance spectroscopy together,we investigate the ultrafast photoexcited carrier dynamics and current transients in Sb_(2)Te_(3)-GeTe superlattices.Sample orientation and excitation polarization dependences of the THz emission confirm that ultrafast thermo-electric,shift and injection currents contribute to the THz generation in Sb_(2)Te_(3)-GeTe superlattices.By decreasing the thickness and increasing the number of GeTe and Sb_(2)Te_(3) layer,the interlayer coupling can be enhanced,which significantly reduces the contribution from circular photo-galvanic effect(CPGE).A photo-induced bleaching in the transient reflectance spectroscopy probed in the range of~1100 nm to~1400 nm further demonstrates a gapped state resulting from the interlayer coupling.These demonstrates play an important role in the development of iPCM-based high-speed optoelectronic devices.

Peak structure in the interlayer conductance of Moirésuperlattices

We investigate the peak structure in the interlayer conductance of Moirésuperlattices using a tunneling theory wedeveloped previously.The theoretical results predict that,due to the resonance of two different partial waves,the doublepeakstructure can appear in the curve of the interlayer conductance versus twist angle.Furthermore,we study the influencesof the model parameters,i.e.,the chemical potential of electrodes,the thickness of Moirésuperlattice,and the strength ofinterface potential,on the peak structure of the interlayer conductance.In particular,the parameter dependence of the peakstructure is concluded via a phase diagram,and the physical meanings of the phase diagram is formulized.Finally,thepotential applications of the present work is discussed.

An advanced theoretical approach to study super-multiperiod superlattices:theory vs experiments

A new theoretical method to study super-multiperiod superlattices has been developed.The method combines the precision of the 8-band kp-method with the flexibility of the shooting method and the Monte Carlo approach.This method was applied to examine the finest quality samples of super-multiperiod Al_(0.3)Ga_(0.7)As/GaAs superlattices grown by molecular beam epitaxy.The express photoreflectance spectroscopy method was utilized to validate the proposed theoretical method.For the first time,the accurate theoretical analysis of the energy band diagram of super-multiperiod superlattices with experimental verification has been conducted.The proposed approach highly accurately determines transition peak positions and enables the calculation of the energy band diagram,transition energies,relaxation rates,and gain estimation.It has achieved a remarkably low 5%error compared to the commonly used method,which typically results in a 25%error,and allowed to recover the superlattice parameters.The retrieved intrinsic parameters of the samples aligned with XRD data and growth parameters.The proposed method also accurately predicted the escape of the second energy level for quantum well thicknesses less than 5 nm,as was observed in photoreflectance experiments.The new designs of THz light-emitting devices operating at room temperature were suggested by the developed method.

Recent progress on fabrication and flat-band physics in 2D transition metal dichalcogenides moiré superlattices

Moiré superlattices are formed when overlaying two materials with a slight mismatch in twist angle or lattice constant. They provide a novel platform for the study of strong electronic correlations and non-trivial band topology, where emergent phenomena such as correlated insulating states, unconventional superconductivity, and quantum anomalous Hall effect are discovered. In this review, we focus on the semiconducting transition metal dichalcogenides(TMDs) based moiré systems that host intriguing flat-band physics. We first review the exfoliation methods of two-dimensional materials and the fabrication technique of their moiré structures. Secondly, we overview the progress of the optically excited moiré excitons, which render the main discovery in the early experiments on TMD moiré systems. We then introduce the formation mechanism of flat bands and their potential in the quantum simulation of the Hubbard model with tunable doping, degeneracies, and correlation strength. Finally, we briefly discuss the challenges and future perspectives of this field.

Impeded thermal transport in aperiodic BN/C nanotube superlattices due to phonon Anderson localization

Anderson localization of phonons is a kind of phonon wave effect,which has been proved to occur in many structures with disorders.In this work,we introduced aperiodicity to boron nitride/carbon nanotube superlattices(BN/C NT SLs),and used molecular dynamics to calculate the thermal conductivity and the phonon transmission spectrum of the models.The existence of phonon Anderson localization was proved in this quasi one-dimensional structure by analyzing the phonon transmission spectra.Moreover,we introduced interfacial mixing to the aperiodic BN/C NT SLs and found that the coexistence of the two disorder entities(aperiodicity and interfacial mixing)can further decrease the thermal conductivity.In addition,we also showed that anharmonicity can destroy phonon localization at high temperatures.This work provides a reference for designing thermoelectric materials with low thermal conductivity by taking advantage of phonon localization.

High-performance extended short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices

High performance short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices on GaSb substrate have been demonstrated.At 300 K,the device exhibits a 50%cut-off wavelength of~2.1μm as predicted from the band structure calculation;the device responsivity peaks at 0.85 A/W,corresponding to a quantum efficiency(QE)of 56%for 2.0μm-thick absorption region.The dark current density of 1.03×10^(-3)A/cm^(2)is obtained under 50 mV applied bias.The device exhibits a saturated dark current shot noise limited specific detectivity(D*)of 3.29×1010cm·Hz^(1/2)/W(at a peak responsivity of 2.0μm)under-50 mV applied bias.

Strain compensated type Ⅱ superlattices grown by molecular beam epitaxy

We investigate a strain compensation method for the growth of complex interband cascade laser structures. For thick In As/Al Sb superlattice clad layers, the sublayer thicknesses were adjusted so that the tensile strain energy in the In As sublayer was equal to the compressive strain energy in the Al Sb sublayer. For the four-constituent active region, as the compressive strain in the Ga0.65In0.35Sb alloy layer was large, a tensile strain was incorporated in the chirped In As/Al Sb superlattice region for strain compensation to the Ga0.65In0.35Sb alloy. A laser structure of thickness 6 μm was grown on the Ga Sb substrate by molecular beam epitaxy. The wafer exhibited good surface morphology and high crystalline quality.

1280×1024元InAs/GaSb II类超晶格中/中波双色红外焦平面探测器

本文报道了1280×1024元InAs/GaSb II类超晶格中/中波双色红外焦平面阵列探测器的研究结果。探测器采用PN-NP叠层双色外延结构,信号提取采用叠层双色结构和顺序读出方式。运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为中波1:6 ML InAs/7 ML GaSb和中波2:9 ML InAs/7 ML GaSb。焦平面阵列像元中心距为12μm。在80 K时测试,器件双波段的工作谱段为中波1:3~4μm,中波2:3.8~5.2μm。中波1器件平均峰值探测率达到6.32×10^(11) cm·Hz^(1/2)W^(-1),中波2器件平均峰值探测率达到2.84×10^(11) cm·Hz^(1/2)W^(-1)。红外焦平面偏压调节成像测试得到清晰的双波段成像。本文是国内首次报道1280×1024规模InAs/GaSb II类超晶格中/中波双色红外焦平面探测器。

D0_(22)相强化型Ni_(2)CoCrFeNb_(0.15)高熵合金的变形机理

采用透射电子显微镜和扫描电子显微镜的背散射电子衍射及电子隧道衬度成像技术研究了D0_(22)相强化型Ni_(2)CoCrFeNb_(0.15)高熵合金在单轴拉伸变形过程中的织构演化、变形亚结构特征、位错与析出相交互作用以及断裂行为。结果表明:位错的平面滑移主导了该合金的单轴拉伸变形,D0_(22)超点阵相是促进位错平面滑移的主要因素。因位错的平面滑移模式产生的平面滑移带随着应变量的增加,其密度随之增加,平均间距随之减小。变形过程中先形成{001}织构,然后{111}织构增强,最终获得典型的{001}和{111}拉伸织构。当合金在单独拉伸变形过程中达到最大应力时,晶界处萌生裂纹并扩展为断裂主裂纹,导致塑性变形失稳。

40 K双波段长波探测器冷箱封装技术研究

冷光学技术是弱目标及多光谱红外探测的重要支撑技术。为了实现低温光学系统温度精确控制和防污染,一般多将低温光学与探测器集成在冷箱内。某高光谱相机需要1个320×64量子阱探测器和1个320×64 II类超晶格探测器共面拼接,集成双波段微型滤光片,形成长波双波段探测杜瓦组件,探测器工作所需的40 K低温环境由脉管制冷机提供。杜瓦采用无窗口设计,并通过柔性波纹管将杜瓦外壳与冷箱外壳集成,以实现气密性集成和光校调节。针对40 K温区双波段探测器封装的三维拼接、探测器及滤光片的低应力封装、制冷机与探测器的高效热传输等难点,对探测器的三维拼接、40 K温区高效热传输、探测器低应力集成的热层结构、低应力滤光片支撑、杜瓦与制冷机耦合等进行研究,创新性提出了三点Z向调节拼接方法、探测器Al2O3载体复合钼基板和钼冷平台的热层结构、双波段滤光片集成的钼支撑结构、带应力隔离的冷平台与制冷机过盈装配的耦合方法,最终实现了40 K温区下双波段探测器平面度优于±2.06μm(RMS)、探测器的低温应力小于22.06 MPa、双波段滤光片低温形变小于8.55μm、探测器与制冷机温度梯度为2.6 K。40 K长波双波段红外探测器冷箱杜瓦组件经过2000 h通电老练和300次开关机试验验证,试验前后组件性能未发生明显变化,满足工程化应用的要求。

光电调控的磁性WSe_(2)超晶格中的自旋和谷极化输运

基于磁性WSe_(2)超晶格系统,探讨了非共振圆偏振光与栅极电压及其对隧穿、谷极化及自旋极化的影响;发现了单层WSe_(2)的弹道输运操纵,以及基于磁性WSe_(2)的NM-FM-NM结的周期性阵列量子输运的调控.结果表明:通过增加势垒的数量,圆偏振光临界值可消除透射能隙;圆偏振光和栅极电压可视为一个透射阀,也可用于控制自旋和谷极化的敏感旋钮.发现了在WSe_(2)超晶格中的克莱因隧穿是自旋-谷相关的;自旋-谷极化可以利用栅极电压和圆偏振光来调整和转换.

界面特性对InAs/GaSb Ⅱ型超晶格光学性质影响理论研究

InAs/GaSb Ⅱ型超晶格是中红外谱段光电子器件的核心结构,其Ⅱ型能带排列特点使电子、空穴在实空间分离而跨过界面,其非公共原子构型使得界面态丰富。我们在Burt-Foreman包络函数理论的基础上,讨论了不同界面态对超晶格电子能态和波函数的调控作用。理论计算表明,超晶格缓变界面和界面势两种不对称界面态分布,都会导致重空穴带的自旋劈裂,而只有施加界面势时才会使得轻空穴带发生自旋劈裂。此外,研究了改变阱宽和改变势垒时超晶格体系带隙的变化趋势。结果表明,随着势垒厚度增大,陡峭界面和缓变界面两种界面态下的带隙计算结果逐渐降低,并且随着厚度增加带隙趋于收敛,而界面势下的带隙计算结果随着势垒厚度的增大而增大,与前两者呈现相反的趋势,这为中红外超晶格器件的精确设计提供了可参考的理论基础。

T2SL红外探测器高量子效率机理的研究进展

二类超晶格(T2SL)红外探测器灵敏度高、响应速度快,适用于更远距离成像、更高速度的运动目标追踪。量子效率(QE)是决定光电探测器能否高质量成像的关键指标之一,提高T2SL红外探测器的QE具有重要意义。为了更直观地理解T2SL红外探测器QE的提高方式,梳理了中长波T2SL红外探测器提高QE的方法,归纳了QE在不同调控手段下能达到的程度,重点讨论了能带结构设计、吸收层厚度设定、吸收层掺杂类型选择、材料改进等方面对T2SL红外探测器QE的影响情况,并对T2SL红外探测器高QE的研究现状和未来发展进行了展望。

基于合成维度拓扑外尔点的波长选择热辐射超构表面

黑体辐射通常具有覆盖整个红外波长范围的宽带光谱,导致红外波段的大部分能量不能有效利用,降低了辐射效率.近年来,具有二维亚波长人工纳米结构的超构表面因其在调节光学特性方面的灵活性而得到广泛研究,这为调控热辐射提供了一个理想的平台.在超构表面中,采用合成维度方法为热辐射的精细调控开辟了新路径,尤其突显了超越传统三维体系的物理特性和丰富的拓扑物理.相比于在三维系统中探索物理现象,研究一维或二维系统更为可行和高效.合成维度的方法通过引入系统的结构或物理参数,为操控光子系统中的内在自由度提供了可能性.本文研究了利用合成维度方法实现波长选择热辐射.首先在超晶格模型中构建合成拓扑外尔点,通过角分辨热辐射谱(ARTES)对合成外尔锥进行实验表征,在实现了合理的波长选择热辐射的同时能够尽可能地抑制其他波长的辐射,对于实际的红外应用,如热光伏和热管理装置,是必不可少的.

基于AlAsSb/InAsSb超晶格势垒的InAs/InAsSbⅡ类超晶格nBn中波红外探测器

InAs/InAsSbⅡ类超晶格避免了InAs/GaSbⅡ类超晶格中与Ga原子相关的缺陷复合中心,具有更高的少数载流子寿命,在高工作温度中波红外探测器制备方面有着良好的应用前景。少数载流子单极势垒结构通常被用来抑制探测器暗电流,如nBn结构探测器。在InAs/InAsSbⅡ类超晶格nBn中波红外光电探测器中,势垒层常采用AlAsSb等多元合金材料,阻挡多数载流子的输运。然而,势垒层与吸收层存在的价带偏移(VBO)使得光电流往往需要在大偏压下饱和,从而增大了探测器暗电流。本文设计了一种AlAsSb/InAsSb超晶格势垒,旨在消除VBO并降低量子效率对偏压的依赖性。研究结果显示,150 K下,设计制备的nBn光电探测器的50%截止波长为4.5μm,探测器光响应在-50 mV的小反向偏压下达到了饱和,3.82μm处的峰值响应度为1.82 A/W,对应量子效率为58.8%。在150 K和-50 mV偏压下,探测器的暗电流密度为2.01×10^(-5)A/cm^(2),计算得到在3.82μm的峰值探测率为6.47×10^(11)cm·Hz^(1/2)/W。

基于超晶格PUF的轻量级信息论安全密钥达成协议

物理不可克隆函数(physicalunclonablefunction,PUF)是一种新型硬件安全原语,提取由器件制造过程中不可避免的随机差异作为密钥.超晶格PUF自提出以来,由于其良好的强PUF特性吸引了国内外诸多学者投入到超晶格随机数发生器和身份认证研究中.但是目前针对超晶格PUF的多方密钥达成协议研究仍然较少,尤其是面向轻量级设备场景.本文提出了一种基于超晶格PUF的轻量级密钥达成协议,阐述了从超晶格PUF派生密钥的方法,并提供信息论安全.通过引入可信第三方来实现持有超晶格PUF的终端设备的注册和会话密钥达成等功能.分析了该协议的攻击模型,证明了其信息论安全.最后在Cortex-A7平台进行实验验证,阐述了其效率和适用性.所提密钥达成协议专注于轻量级群组用户需求,对未来车联网、工业物联网等场景下的安全需求具有重要意义.

GaSb 衬底厚度对超晶格电学特性影响的研究

非故意掺杂的GaSb存在施主缺陷,呈现p型导电,导电性较好。对于分子束外延制备的Sb基超晶格材料,通常用GaSb做衬底,而GaSb衬底厚度远大于超晶格材料厚度,因此对锑基二类超晶格材料进行霍尔测试时GaSb衬底厚度对超晶格电学性能容易产生较大影响。而在红外探测器制备过程中,为了增加材料对红外辐射的吸收,通常在器件制备完成后对衬底进行减薄,通过背入射的方式对红外辐射进行探测,因此探究GaSb厚度对超晶格电学特性的影响能够为超晶格材料的结构设计提供理论依据。讨论了n型超晶格薄膜及p型超晶格薄膜的电学特性受GaSb衬底厚度的影响。使用由分子束外延技术在弱n型GaSb衬底上生长GaSb缓冲层后,分别生长Si掺杂的n型InAs/GaSbⅡ类超晶格及Be掺杂的p型InAs/GaSbⅡ类超晶格,衬底进行不同厚度的减薄,并进行霍尔测试。结果表明:在77 K温度下的霍尔测试中,虽然缓冲层减弱了衬底对超晶格薄膜的影响,但不能完全消除衬底对超晶格薄膜电学特性的影响。n型超晶格及p型超晶格的电学特性仍随衬底厚度变化产生:衬底厚度的减薄导致表面复合效应增加、杂质浓度重分布,因此超晶格材料载流子浓度的减小,载流子迁移率在相同的温度下受杂质散射影响较大,载流子浓度的减小降低了电子散射的可能性,因此迁移率随衬底厚度减薄而增加。n型超晶格载流子浓度及迁移率的变化均在同一量级,与缓冲层极性相反的薄膜材料减薄前的电学特性可以为减薄后的电学特性进行标定。p型超晶格载流子浓度变化相对较大,与缓冲层材料极性相同的材料在需要考虑载流子浓度时,材料生长过程中需要进行高浓度掺杂保证减薄后薄膜材料的载流子浓度,迁移率变化几乎可视为不变。该研究对标定不同类型掺杂浓度的超晶格材料可提供一定的参考意义。

Recent progress on fabrication, spectroscopy properties, and device applications in Sn-doped CdS micro-nano structures

One-dimensional semiconductor materials possess excellent photoelectric properties and potential for the construction of integrated nanodevices. Among them, Sn-doped CdS has different micro-nano structures, including nanoribbons,nanowires, comb-like structures, and superlattices, with rich optical microcavity modes, excellent optical properties, and a wide range of application fields. This article reviews the research progress of various micrometer structures of Sn-doped CdS, systematically elaborates the effects of different growth conditions on the preparation of Sn-doped CdS micro-nano structures, as well as the spectral characteristics of these structures and their potential applications in certain fields. With the continuous progress of nanotechnology, it is expected that Sn-doped CdS micro-nano structures will achieve more breakthroughs in the field of optoelectronics and form cross-integration with other fields, jointly promoting scientific, technological, and social development.

Structural design of mid-infrared waveguide detectors based on InAs/GaAsSb superlattice

In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are often constrained by the reliance on off-chip light sources and detectors.In this study,we demonstrate an InAs/GaAsSb superlattice mid-infrared waveguide integrated detector.The GaAsSb waveguide layer and the InAs/GaAsSb superlattice absorbing layer are connected through evanescent coupling,facilitating efficient and highquality detection of mid-infrared light with minimal loss.We conducted a simulation to analyze the photoelectric characteristics of the device.Additionally,we investigated the factors that affect the integration of the InAs/GaAs⁃Sb superlattice photodetector and the GaAsSb waveguide.Optimal thicknesses and lengths for the absorption lay⁃er are determined.When the absorption layer has a thickness of 0.3μm and a length of 50μm,the noise equiva⁃lent power reaches its minimum value,and the quantum efficiency can achieve a value of 68.9%.The utilization of waveguide detectors constructed with Ⅲ-Ⅴ materials offers a more convenient means of integrating mid-infra⁃red light sources and achieving photoelectric detection chips.