A physical and explicit surface potential model for undoped symmetric double-gate polysilicon thinfilm transistors has been derived based on an effective charge density approach of Poisson＇s equation with both expone...A physical and explicit surface potential model for undoped symmetric double-gate polysilicon thinfilm transistors has been derived based on an effective charge density approach of Poisson＇s equation with both exponential deep and tail state terms included. The proposed surface potential calculation is single-piece and eliminatestheregionalapproach.Modelpredictionsarecomparedtonumericalsimulationswithcloseagreement,having absolute error in the millivolt range. Furthermore, expressions of the drain current are given for a wide range of operation regions, which have been justified by thorough comparisons with experimental data.展开更多
基金Project supported by the National Natural Science Foundation of China(No.61204100)the Guangdong Natural Science Foundation(No.S2013010013088)
文摘A physical and explicit surface potential model for undoped symmetric double-gate polysilicon thinfilm transistors has been derived based on an effective charge density approach of Poisson＇s equation with both exponential deep and tail state terms included. The proposed surface potential calculation is single-piece and eliminatestheregionalapproach.Modelpredictionsarecomparedtonumericalsimulationswithcloseagreement,having absolute error in the millivolt range. Furthermore, expressions of the drain current are given for a wide range of operation regions, which have been justified by thorough comparisons with experimental data.
