Damage Evolution of Ballastless Track Concrete Exposed to Flexural Fatigue Loads:The Application of Ultrasonic Pulse Velocity,Impact-echo and Surface Electrical Resistance Method

In order to clarify the fatigue damage evolution of concrete exposed to flexural fatigue loads,ultrasonic pulse velocity(UPV),impact-echo technology and surface electrical resistance(SR) method were used.Damage variable based on the change of velocity of ultrasonic pulse(Du) and impact elastic wave(Di)were defined according to the classical damage theory.The influences of stress level,loading frequency and concrete strength on damage variable were measured.The experimental results show that Du and Di both present a three-stages trend for concrete exposed to fatigue loads.Since impact elastic wave is more sensitive to the microstructure damage in stage Ⅲ,the critical damage variable,i e,the damage variable before the final fracture of concrete of Di is slightly higher than that of Du.Meanwhile,the evolution of SR of concrete exposed to fatigue loads were analyzed and the relationship between SR and Du,SR and Di of concrete exposed to fatigue loads were established.It is found that the SR of concrete was decreased with the increasing fatigue cycles,indicating that surface electrical resistance method can also be applied to describe the damage of ballastless track concrete exposed to fatigue loads.

Nanogrinding of SiC wafers with high flatness and low subsurface damage

Nanogrinding of SiC wafers with high flatness and low subsurface damage was proposed and nanogrinding experiments were carried out on an ultra precision grinding machine with fine diamond wheels. Experimental results show that nanogrinding can produce flatness less than 1.0μm and a surface roughness Ra of 0.42nm. It is found that nanogrinding is capable of producing much flatter SiC wafers with a lower damage than double side lapping and mechanical polishing in much less time and it can replace double side lapping and mechanical polishing and reduce the removal amount of chemical mechanical polishing.

An Improved Angle Polishing Method for Measuring Subsurface Damage in Silicon Wafers

We present an improved angle polishing method in which the end of the cover slice near the glue layer is beveled into a thin,defect-free wedge,the straight edge of which is used as the datum for measuring the depth of subsurface damage. The bevel angle can be calculated from the interference fringes formed in the wedge. The minimum depth of the subsurface damage that can be measured by this method is a few hundred nanometers. Our results show that the method is straightforward, accurate, and convenient.

Subsurface Damage in the Monocrystal Silicon Grinding on Atomic Scale

A molecular dynamics （MD） simulation is carried out to analyze the effect of cutting edge radius,cutdepth, and grinding speed on the depth of subsurface damage layers in monocrystal silicon grinding processes on an atomic scale. The results show that when the cutting edge radius decreases in the nanometric grinding process with the same cut-depth and grinding speed, the depth of the damage layers and the potential energy between the silicon atoms decrease too. Also, when the cut depth increases, both the depth of the damage layers and the potential energy between silicon atoms increase. When the grinding speed is between 20 and 200m/s,the depth of the damage layers does not change much with the increase of the grinding speed under the same cutting edge radius and cut depth conditions. This means that the MD simulation is not sensitive to changes in the grinding speed, and thus increasing the grinding speed properly can shorten the sion,the subsurface damage of monocrystal silicon is silicon atoms, which is verified by the ultra-precision simulation time and enlarge the simulation scale. In conclumainly based on the change of the potential energy between grinding and CMP experiments.

Understanding Simulated Causes of Damaging Surface Winds in a Derecho-Producing Mesoscale Convective System near the East China Coast Based on Convection-Permitting Simulations

A mesoscale convective system(MCS) occurred over the East China coastal provinces and the East China Sea on 30April 2021, producing damaging surface winds near the coastal city Nantong with observed speeds reaching 45 m s^(–1). A simulation using the Weather Research and Forecasting model with a 1.5-km grid spacing generally reproduces the development and subsequent organization of this convective system into an MCS, with an eastward protruding bow segment over the sea. In the simulation, an east-west-oriented high wind swath is generated behind the gust front of the MCS. Descending dry rear-to-front inflows behind the bow and trailing gust front are found to feed the downdrafts in the main precipitation regions. The inflows help to establish spreading cold outflows and enhance the downdrafts through evaporative cooling. Meanwhile, front-to-rear inflows from the south are present, associated with severely rearward-tilted updrafts initially forming over the gust front. Such inflows descend behind(north of) the gust front, significantly enhancing downdrafts and near-surface winds within the cold pool. Consistently, calculated trajectories show that these parcels that contribute to the derecho originate primarily from the region ahead(south) of the east-west-oriented gust front, and dry southwesterly flows in the low-to-middle levels contribute to strong downdrafts within the MCS. Moreover, momentum budget analyses reveal that a large westward-directed horizontal pressure gradient force within the simulated cold pool produced rapid flow acceleration towards Nantong. The analyses enrich the understanding of damaging wind characteristics over coastal East China and will prove helpful to operational forecasters.

Methods for Detection of Subsurface Damage:A Review

Subsurface damage is easily induced in machining of hard and brittle materials because of their particular mechani?cal and physical properties. It is detrimental to the strength,performance and lifetime of a machined part. To manu?facture a high quality part,it is necessary to detect and remove the machining induced subsurface damage by the subsequent processes. However,subsurface damage is often covered with a smearing layer generated in a machining process,it is rather di cult to directly observe and detect by optical microscopy. An e cient detection of subsur?face damage directly leads to quality improvement and time saving for machining of hard and brittle materials. This paper presents a review of the methods for detection of subsurface damage,both destructive and non?destructive. Although more reliable,destructive methods are typically time?consuming and confined to local damage infor?mation. Non?destructive methods usually su er from uncertainty factors,but may provide global information on subsurface damage distribution. These methods are promising because they can provide a capacity of rapid scan and detection of subsurface damage in spatial distribution.

Experimental investigation of subsurface damage depth of lapped optics by fluorescent method

Subsurface defects were fluorescently tagged with nanoscale quantum dots and scanned layer by layer using confocal fluorescence microscopy to obtain images at various depths. Subsurface damage depths of fused silica optics were characterized quantitatively by changes in the fluorescence intensity of feature points. The fluorescence intensity vs scan depth revealed that the maximum fluorescence intensity decreases sharply when the scan depth exceeds a critical value. The subsurface damage depth could be determined by the actual embedded depth of the quantum dots. Taper polishing and magnetorheological finishing were performed under the same conditions to verify the effectiveness of the nondestructive fluorescence method. The results indicated that the quantum dots effectively tagged subsurface defects of fused-silica optics, and that the nondestructive detection method could effectively evaluate subsurface damage depths.

Subsurface Damage in Scratch Testing of Potassium Dihydrogen Phosphate Crystal

Potassium dihydrogen phosphate （KDP） is an important electro-optic crystal, often used for frequency conversion and Pockels cells in large aperture laser systems. To investigate the influence of anisotropy to the depth of subsurface damage and the profiles of cracks in subsurface of KDP crystal, an experimental study was made to obtain the form of subsurface damage produced by scratches on KDP crystal in [100], [120] and [110] crystal directions on （001） crystal plane. The results indicated that there were great differences between depth and crack shape in different directions. For many slip planes in KDP, the plastic deformation and cracks generated under pressure in the subsurface were complex. Fluctuations of subsurface damage depth at transition point were attributed to the deformation of the surface which consumed more energy when the surface deformation changed from the mixed region of brittle and plastic to the complete brittle region along the scratch. Also, the process of subsurface damage from shallow to deep, from dislocation to big crack in KDP crystal with the increase of radial force and etch pit on different crystal plane were obtained. Because crystallographic orientation and processing orientation was different, etching pits on （100） crystal plane were quadrilateral while on （110） plane and （120） plane were trapezoidal and triangular, respectively.

Relationship between subsurface damage and surface roughness of ground optical materials

A theoretical model of relationship between subsurface damage and surface roughness was established to realize rapid and non-destructive measurement of subsurface damage of ground optical materials.Postulated condition of the model was that subsurface damage depth and peak-to-valley surface roughness are equal to depth of radial and lateral cracks in brittle surface induced by small-radius(radius≤200 μm)spherical indenter,respectively.And contribution of elastic stress field to the radial cracks propagation was also considered in the loading cycle.Subsurface damage depth of ground BK7 glasses was measured by magnetorheological finishing spot technique to validate theoretical ratio of subsurface damage to surface roughness.The results show that the ratio is directly proportional to load of abrasive grains and hardness of optical materials,while inversely proportional to granularity of abrasive grains and fracture toughness of optical materials.Moreover,the influence of the load and fracture toughness on the ratio is more significant than the granularity and hardness,respectively.The measured ratios of 80 grit and 120 grit fixed abrasive grinding of BK7 glasses are 5.8 and 5.4,respectively.

Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching

In this work,we propose to reveal the subsurface damage(SSD)of 4H-SiC wafers by photo-chemical etching and identify the nature of SSD by molten-alkali etching.Under UV illumination,SSD acts as a photoluminescence-black defect.The selective photo-chemical etching reveals SSD as the ridge-like defect.It is found that the ridge-like SSD is still crystalline 4H-SiC with lattice distortion.The molten-KOH etching of the 4H-SiC wafer with ridge-like SSD transforms the ridge-like SSD into groove lines,which are typical features of scratches.This means that the underlying scratches under mechanical stress give rise to the formation of SSD in 4H-SiC wafers.SSD is incorporated into 4H-SiC wafers during the lapping,rather than the chemical mechanical polishing(CMP).

Rapid subsurface damage detection of SiC using inductivity coupled plasma

This paper proposes a method for the rapid detection of subsurface damage(SSD)of Si C using atmospheric inductivity coupled plasma.As a plasma etching method operated at ambient pressure with no bias voltage,this method does not introduce any new SSD to the substrate.Plasma diagnosis and simulation are used to optimize the detection operation.Assisted by an Si C cover,a taper can be etched on the substrate with a high material removal rate.Confocal laser scanning microscopy and scanning electron microscope are used to analyze the etching results,and scanning transmission electron microscope(STEM)is adopted to confirm the accuracy of this method.The STEM result also indicates that etching does not introduce any SSD,and the thoroughly etched surface is a perfectly single crystal.A rapid SSD screening ability is also demonstrated,showing that this method is a promising approach for the rapid detection of SSD.

Correlation of polishing-induced shallow subsurface damages with laser-induced gray haze damages in fused silica optics

Laser-induced damage in fused silica optics greatly restricts the performances of laser facilities. Gray haze damage,which is always initiated on ceria polished optics, is one of the most important damage morphologies in fused silica optics.In this paper, the laser-induced gray haze damages of four fused silica samples polished with CeO2, Al2O3, ZrO2, and colloidal silica slurries are investigated. Four samples all present gray haze damages with much different damage densities.Then, the polishing-induced contaminant and subsurface damages in four samples are analyzed. The results reveal that the gray haze damages could be initiated on the samples without Ce contaminant and are inclined to show a tight correlation with the shallow subsurface damages.

Subsurface Damage of Monocrystalline Germanium Wafers by Fixed and Free Abrasive Lappings

The subsurface damage(SSD)layers of monocrystalline germanium wafers lapped by three different ways were measured and compared by the method of nanoindentation and micro morphology.Three ways such as ice-fixed abrasive,thermosetting fixed abrasive and free abrasive lappings are adopted to lap monocrystalline germanium wafers.The SSD depth was measured by a nanoindenter,and the morphology of SSD layer was observed by an atomic force microscopy(AFM).The results show that the SSD layer of monocrystalline germanium wafer is mainly composed of soft corrosion layer and plastic scratch and crack growth layer.Compared with thermosetting fixed abrasive and free abrasive lappings,the SSD depth lapped with ice-fixed abrasive is shallower.Moreover,the SSD morphology of monocrystalline germanium wafer lapped with ice-fixed abrasive is superior to those of two other processing ways.

The Subsurface and Surface Indian Ocean Dipoles and Their Association with ENSO in CMIP6 models

This study assesses the reproducibility of 31 historical simulations from 1850 to 2014 in the Coupled Model Intercomparison Project phase 6(CMIP6) for the subsurface(Sub-IOD) and surface Indian Ocean Dipole(IOD) and their association with El Ni?o-Southern Oscillation(ENSO). Most CMIP6 models can reproduce the leading east-west dipole oscillation mode of heat content anomalies in the tropical Indian Ocean(TIO) but largely overestimate the amplitude and the dominant period of the Sub-IOD. Associated with the much steeper west-to-east thermocline tilt of the TIO, the vertical coupling between the Sub-IOD and IOD is overly strong in most CMIP6 models compared to that in the Ocean Reanalysis System 4(ORAS4). Related to this, most models also show a much tighter association of Sub-IOD and IOD events with the canonical ENSO than observations. This explains the more(less) regular Sub-IOD and IOD events in autumn in those models with stronger(weaker) surface-subsurface coupling in TIO. Though all model simulations feature a consistently low bias regarding the percentage of the winter–spring Sub-IOD events co-occurring with a Central Pacific(CP) ENSO, the linkage between a westward-centered CP-ENSO and the Sub-IOD that occurs in winter–spring, independent of the IOD, is well reproduced.

Hemispherical resonator with low subsurface damage machined by small ball-end fine diamond grinding wheel:A novel grinding technique

As for the ultra-precision grinding of the hemispherical fused silica resonator,due to the hard and brittle nature of fused silica,subsurface damage(SSD)is easily generated,which enormously influences the performance of such components.Hence,ultra-precision grinding experiments are carried out to investigate the surface/subsurface quality of the hemispherical resonator machined by the small ball-end fine diamond grinding wheel.The influence of grinding parameters on the surface roughness(SR)and SSD depth of fused silica samples is then analyzed.The experimental results indicate that the SR and SSD depth decreased with the increase of grinding speed and the decrease of feed rate and grinding depth.In addition,based on the material strain rate and the maximum undeformed chip thickness,the effect of grinding parameters on the subsurface damage mechanism of fused silica samples is analyzed.Furthermore,a multi-step ultra-precision grinding technique of the hemispherical resonator is proposed based on the interaction influence between grinding depth and feed rate.Finally,the hemispherical resonator is processed by the proposed grinding technique,and the SR is improved from 454.328 nm to 110.449 nm while the SSD depth is reduced by 94%from 40μm to 2.379μm.The multi-step grinding technique proposed in this paper can guide the fabrication of the hemispherical resonator.

Investigation of Surface Damage in Forming of High Strength and Galvanized Steel Sheets

Powdering/exfoliating of coatings and scratching galvanized steels and high strength steels （HSS）, are the main forms of surface damage in the forming of which result in increased die maintenance cost and scrap rate. In this study, a special rectangular box was developed to investigate the behavior and characteristics of surface damage in sheet metal forming （SMF） processes. U-channel forming tests were conducted to study the effect of tool hardness on surface damage in the forming of high strength steels and galvanized steels （hot-dip galvanized and galvannealed steels）. Experimental results indicate that sheet deformation mode influences the severity of surface damage in SMF and surface damage occurs easily at the regions where sheet specimen deforms under the action of compressive stress. Die corner is the position where surface damage initiates. For HSS sheet, surface damage is of major interest due to high forming pressure. The HSS and hot-dip galvanized steels show improved ability of damage-resistance with increased hardness of the forming tool. However, for galvannealed steel it is not the forming tool with the highest hardness value that performs best.

Characteristics of Laser-Induced Surface and Bulk Damage of Large-Aperture Deuterated Potassium Dihydrogen Phosphate at 351 nm

Deuterated potassium dihydrogen phosphate damage performance at 351 nm is studied on a large-aperture laser system. Bulk and rear-surface damage are initiated under the 3ω fluences of 6.T J/cm2 and 33/cm2, and show different growth characteristics under multiple laser irradiations with the fluence of 6 J/cm2. The size and number of bulk damage keep unchanged once initiated. However, surface damage size also does not grow, while surface damage number increases linearly with laser shots. Different damage thresholds and growth behaviors suggest different formations of bulk and surface damage precursors. The cause of surface damage is supposed to be near-surface absorbing particles buried under the sol-gel coating.

Bulk and surface damages in complementary bipolar junction transistors produced by high dose irradiation

Two complementary types NPN and PNP of bipolar junction transistors （BJTs） were exposed to higll dose of neutrons and gamma rays. The change in the base and collector currents, minority carriers lifetime, and current gain factor/3 with respect to the dose were analyzed. The contributions of the base current according to the defect types were also reported. It was declared that the radiation effect of neutrons was almost similar between the two transistor types, this effect at high dose may decrease the value of/3 to less than one. The Messenger-Spratt equation was used to describe the experimental results in this case. However, the experimental data demonstrated that the effect of gamma rays was generally higher on NPN than PNP transistors. This is mainly attributed to the difference in the behavior of the trapped positive charges in the SiO2 layers. Meanwhile, this difference tends to be small for high gamma dose.

Comparison of the Water Quality between the Surface Microlayer and Subsurface Water in Typical Water Bodies in Sichuan

Investigation and assessment of water quality status in the surface microlayer (SML) and subsurface water (SSW) in several kinds of typical water bodies in Sichuan were carried out from May to June 2010.The results showed that N, P were enriched to some extent at SML in Xichi pool, Funan River and Longquan reservoir, which made concentrations of the indexes such as total nitrogen (TN), total phosphorus (TP), chemical oxygen demand (COD)of SML be much higher than those of SSW (P<0.05), and the exceeding rates were up to 100%. The contents of TN,TP,COD of SML and SSW in Xichi pool, and Funan River exceeded III even Ⅳlevel of water quality standard, while these indexes in Longquan reservoir were lower than Ⅲ or Ⅱlevel of water quality standard. Though Chl. a mass concentration at SML and SSW in Funan River was prominently lower than those in Xichi pool and Longquan reservoir, according to the eutrophic evaluation standard, the water bodies of SML and SSW in Funan River and Xichi pool were in middle eutrophication, the highest index of eutrophication (E value) was up to 66.78, while there was light entuophic in Longquan reservoir, and there had obvious difference with E value and COD, TP, TN (P<0.05). This research shows that the water quality of Longquan reservoir is generally well. While Funan River is a middle eutrophication, and its pollution is more serious than Xichi pool, the two waters belong to national III even IV level, and SML has the capability of enrichment to the pollutants such as N, P.

Surface Damage in Wire cut Silicon Wafers

The surface damage and the damage depth in wire-cut silicon wafers and inner-diameter (ID) cut silicon wafers were studied by means of thickness meter, scanning electron microscopy (SEM) and double crystal X-ray diffractometer. The results show that the surface of wire-cut silicon wafers is rougher than that of ID-cut silicon wafers and the surface damage in wire-cut silicon wafers is more serious than that in ID-cut silicon wafers, while the damage depth in wire-cut silicon wafers is smaller than that in ID-cut silicon wafers. The possible reasons for the generation of surface damage in wire-cut silicon wafers were also discussed.