Topmetal-M2 is a large-area pixel sensor chip fabricated using the GSMC 130 nm CMOS process in 2021.The pixel array of Topmetal-M2 consists of pixels of 400 rows×512 columns with a pixel pitch of 45μm×45μm...Topmetal-M2 is a large-area pixel sensor chip fabricated using the GSMC 130 nm CMOS process in 2021.The pixel array of Topmetal-M2 consists of pixels of 400 rows×512 columns with a pixel pitch of 45μm×45μm.The array is divided into 16 subarrays,with pixels of 400 rows×32 columns per subarray.Each pixel incorporates two charge sensors:a diode sensor and a Topmetal sensor.The in-pixel circuit primarily consists of a charge-sensitive amplifier for energy measurements,a discriminator with a peak-holding circuit,and a time-to-amplitude converter for time-of-arrival measurements.The pixel of Topmetal-M2 has a charge input range of~0-3 k e-,a voltage output range of~0-180 mV,and a charge-voltage conversion gain of~59.56μV∕e-.The average equivalent noise charge of Topmetal-M2,which includes the readout electronic system noise,is~43.45 e-.In the scanning mode,the time resolution of Topmetal-M2 is 1 LSB=1.25μs,and the precision is^()7.41μs.At an operating voltage of 1.5 V,Topmetal-M2 has a power consumption of~49 mW∕cm~2.In this article,we provide a comprehensive overview of the chip architecture,pixel working principles,and functional behavior of Topmetal-M2.Furthermore,we present the results of preliminary tests conducted on Topmetal-M2,namely,alpha-particle and soft X-ray tests.展开更多
With the complication and delicateness of the nuclear physics experiments, the traditional silicon semiconductor detectors such as silicon surface barrier detector and the Li-drifted detector, cannot satisfy the exper...With the complication and delicateness of the nuclear physics experiments, the traditional silicon semiconductor detectors such as silicon surface barrier detector and the Li-drifted detector, cannot satisfy the experimental requirements.Large area ion-implanted silicon detector and silicon strip detector have been badly needed and frequently used in the experiments.展开更多
A chemical vapour deposition （CVD） diamond film detector was prepared and the main characteristics for pulsed proton detection were studied at Beijing Tandem Accelerator. The result shows that the charge collection ...A chemical vapour deposition （CVD） diamond film detector was prepared and the main characteristics for pulsed proton detection were studied at Beijing Tandem Accelerator. The result shows that the charge collection efficiency of the detector increases with increasing electric field intensity and reaches to 9.44% at 5 V/μm with the charge collection distance of 15.9 μm. The relationship between the sensitivity of the detector and proton energy is consistent with the Monte Carlo （MC） simulation result. Its plasma time for a pulse with 4.85×10^5 protons is 1l.2ns. The dose threshold for onset of damage under 9MeV proton irradiation in the detector is about 10^13 cm^-2. All of the results show that a CVD diamond detector has fast time response and high radiation hardness, and can be used in pulsed proton detection.展开更多
Microstructure of P + Si 0.65 Ge 0.35 /p Si HIP infrared detector has been studied by using localization cross section transmission electron microscopy. The photosensitive region of the detector consists of 6 P + Si 0...Microstructure of P + Si 0.65 Ge 0.35 /p Si HIP infrared detector has been studied by using localization cross section transmission electron microscopy. The photosensitive region of the detector consists of 6 P + Si 0.65 Ge 0.35 layers and 5 UD Si layers, which are flat and have thickness of 6 nm and 32 nm, respectively. A stress field exists on the interface between Si 0.65 Ge 0.35 and UD Si layers, but no any crystal defect has been found in this region, except the edges of this region. Both Si 0.65 Ge 0.35 and UD Si layers on amorphous SiO 2 layer consist of polycrystals and are in wave. There is defect area in the edges of photosensitive region. The area appears in a shape of inverse triangle and the maximum width is less than 120 nm. The crystal defects are stacking faults and microtwins.展开更多
In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated...In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.展开更多
Fabrication and characterization of metal-semiconductor-metal ultraviolet （MSM UV） photodetector based on ZnO ultra thin （nano scale） films with Pd Schottky contact are reported. The ZnO thin film was grown on gla...Fabrication and characterization of metal-semiconductor-metal ultraviolet （MSM UV） photodetector based on ZnO ultra thin （nano scale） films with Pd Schottky contact are reported. The ZnO thin film was grown on glass substrate by thermal oxidation of preeposited zinc films using vacuum deposition technique. With applied voltage in the range from -3V to 3V, the contrast ratio, responsivity, and detectivity for an incident radiation of 0.1 mW at 365 nm wavelength were estimated. The proposed device exhibited a high gain which was attributed to the hole trapping at semiconductor-metal interface. I-V characteristics were studied and the parameters, such as ideality factor, leakage current, resistance-areaproduct, and barrier height, were extracted from the measured data.展开更多
Semiconductor-based neutron-detectors are characterized by small size, high energy-resolution, good spatial resolution, and stable response(at the depletion voltage). Consequently, these neutron-detectors are importan...Semiconductor-based neutron-detectors are characterized by small size, high energy-resolution, good spatial resolution, and stable response(at the depletion voltage). Consequently, these neutron-detectors are important for the fields of nuclear proliferation prevention, oil exploration, monitoring neutron-scattering experiments, cancer treatments, and space radiation effect research. However, there are some well-known problems for conventional silicon-based neutron detectors: low neutron-detection efficiency and limited resistance to radiation. Therefore, critical improvements are needed to enable sufficiently effective and practical neutron detection. To address these problems, direct-conversion neutron detectors as well as wide bandgap semiconductor-based detectors have been developed and studied intensely during the past years. Significant progress with respect to detection efficiency, radiation resistance, and room temperature operation was achieved. This paper reviews the latest research highlights, remaining challenges, and emerging technologies of direct-conversion neutron detectors as well as wide-bandgap semiconductor neutron detectors. This compact review serves as a reference for researchers interested in the design and development of improved neutron detectors in the future.展开更多
Purpose Development of highly sensitive semiconductor detectors of large diameter and manufacturing of a measuring complex—a radiometer based on the developed detectors for studying the activity of alpha particles an...Purpose Development of highly sensitive semiconductor detectors of large diameter and manufacturing of a measuring complex—a radiometer based on the developed detectors for studying the activity of alpha particles and the volumetric activity of radon in various media.Methods The detectors were manufactured using surface-barrier and heterojunction technologies.Polishing etchant formulations for silicon have been developed.To obtain plane-parallelism of the plates during chemical etching,a special dynamic setup was used.The structure of the radiometer,electrical circuits,and device software have been developed.Results The results of the development of technology for the manufacture of detectors of large dimensions(30-100 mm in diameter)are presented.Studies of the electrical and radiometric characteristics of surface-barrier n detectors and detectors based on Al-αGe-pSi-Au heterojunctions were carried out.The principle of operation of the electronic components of a radiometer made using these detectors is also given.Conclusion The data of monitoring of radon content in soil air are given.Monitoring results showed that the concentration varies depending on temperature,humidity,and time of day.The GSM/SMS module allows the device to operate in real time.展开更多
Purpose Considerable advances in the fundamental knowledge and applications of radiation science have led to significant progress and development of room-temperature semiconductor radiation detectors(RTSD).The RTSDs t...Purpose Considerable advances in the fundamental knowledge and applications of radiation science have led to significant progress and development of room-temperature semiconductor radiation detectors(RTSD).The RTSDs technologies are continuously evolving with accelerated research and material engineering in the last decade.Significant scientific and technological advancements have led to development of high-performance radiation detectors with high signal-to-noise ratio(SNR),better sensitivity,faster response and higher-resolution with capability of desired room-temperature operation.This paper is a review on emerging semiconductor radiation detector materials with a deeper insight into the prospective role of Bismuth tri-iodide(BiI_(3))for room-temperature radiation detectors.Methods An introduction of the state of art of most developed semiconductor materials,i.e.,cadmium telluride(CdTe),mercury iodide(HgI_(2)),lead iodide(PbI_(2)),etc.,and a critical examination of properties,shortcomings and challenges related to their synthesis have been elaborated.Polymer-semiconductor composites with desirable properties and their integration into detector devices is also presented.Subsequent sections discuss the role of BiI_(3) as an emerging radiation detector material for room-temperature operation with an in-depth discussion on the role of defects in charge transportation and electrode configuration.Furthermore,the current challenges along with the future prospects of these materials for radiation detection to promote continuous innovation and practical applications are also elaborated.Conclusion The comprehensive review on latest developments in room-temperature radiation detector materials is expected to help establish a technological roadmap for the synthesis,fabrication and commercialization of novel materials for development of efficient radiation detectors.展开更多
基金supported by the National Key Research and Development Program of China(No.2020YFE0202002)the National Natural Science Foundation of China(Nos.11875146 and U1932143)。
文摘Topmetal-M2 is a large-area pixel sensor chip fabricated using the GSMC 130 nm CMOS process in 2021.The pixel array of Topmetal-M2 consists of pixels of 400 rows×512 columns with a pixel pitch of 45μm×45μm.The array is divided into 16 subarrays,with pixels of 400 rows×32 columns per subarray.Each pixel incorporates two charge sensors:a diode sensor and a Topmetal sensor.The in-pixel circuit primarily consists of a charge-sensitive amplifier for energy measurements,a discriminator with a peak-holding circuit,and a time-to-amplitude converter for time-of-arrival measurements.The pixel of Topmetal-M2 has a charge input range of~0-3 k e-,a voltage output range of~0-180 mV,and a charge-voltage conversion gain of~59.56μV∕e-.The average equivalent noise charge of Topmetal-M2,which includes the readout electronic system noise,is~43.45 e-.In the scanning mode,the time resolution of Topmetal-M2 is 1 LSB=1.25μs,and the precision is^()7.41μs.At an operating voltage of 1.5 V,Topmetal-M2 has a power consumption of~49 mW∕cm~2.In this article,we provide a comprehensive overview of the chip architecture,pixel working principles,and functional behavior of Topmetal-M2.Furthermore,we present the results of preliminary tests conducted on Topmetal-M2,namely,alpha-particle and soft X-ray tests.
文摘With the complication and delicateness of the nuclear physics experiments, the traditional silicon semiconductor detectors such as silicon surface barrier detector and the Li-drifted detector, cannot satisfy the experimental requirements.Large area ion-implanted silicon detector and silicon strip detector have been badly needed and frequently used in the experiments.
基金Project supported by the National Natural Science Foundation of China (Grant No 10675074)
文摘A chemical vapour deposition （CVD） diamond film detector was prepared and the main characteristics for pulsed proton detection were studied at Beijing Tandem Accelerator. The result shows that the charge collection efficiency of the detector increases with increasing electric field intensity and reaches to 9.44% at 5 V/μm with the charge collection distance of 15.9 μm. The relationship between the sensitivity of the detector and proton energy is consistent with the Monte Carlo （MC） simulation result. Its plasma time for a pulse with 4.85×10^5 protons is 1l.2ns. The dose threshold for onset of damage under 9MeV proton irradiation in the detector is about 10^13 cm^-2. All of the results show that a CVD diamond detector has fast time response and high radiation hardness, and can be used in pulsed proton detection.
文摘Microstructure of P + Si 0.65 Ge 0.35 /p Si HIP infrared detector has been studied by using localization cross section transmission electron microscopy. The photosensitive region of the detector consists of 6 P + Si 0.65 Ge 0.35 layers and 5 UD Si layers, which are flat and have thickness of 6 nm and 32 nm, respectively. A stress field exists on the interface between Si 0.65 Ge 0.35 and UD Si layers, but no any crystal defect has been found in this region, except the edges of this region. Both Si 0.65 Ge 0.35 and UD Si layers on amorphous SiO 2 layer consist of polycrystals and are in wave. There is defect area in the edges of photosensitive region. The area appears in a shape of inverse triangle and the maximum width is less than 120 nm. The crystal defects are stacking faults and microtwins.
文摘In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.
基金support by Indo-Iraq Cultural Exchange Program of ICCR (Indian Council for Cultural Relations)
文摘Fabrication and characterization of metal-semiconductor-metal ultraviolet （MSM UV） photodetector based on ZnO ultra thin （nano scale） films with Pd Schottky contact are reported. The ZnO thin film was grown on glass substrate by thermal oxidation of preeposited zinc films using vacuum deposition technique. With applied voltage in the range from -3V to 3V, the contrast ratio, responsivity, and detectivity for an incident radiation of 0.1 mW at 365 nm wavelength were estimated. The proposed device exhibited a high gain which was attributed to the hole trapping at semiconductor-metal interface. I-V characteristics were studied and the parameters, such as ideality factor, leakage current, resistance-areaproduct, and barrier height, were extracted from the measured data.
基金supported by the National Natural Science Foundation of China (Grant Nos. 11922507, and 12050005)Major State Basic Research Development Program of China (Grant No. 2021YFB3201000)Fundamental Research Funds for the Central Universities (Grant No.2021NTST14)。
文摘Semiconductor-based neutron-detectors are characterized by small size, high energy-resolution, good spatial resolution, and stable response(at the depletion voltage). Consequently, these neutron-detectors are important for the fields of nuclear proliferation prevention, oil exploration, monitoring neutron-scattering experiments, cancer treatments, and space radiation effect research. However, there are some well-known problems for conventional silicon-based neutron detectors: low neutron-detection efficiency and limited resistance to radiation. Therefore, critical improvements are needed to enable sufficiently effective and practical neutron detection. To address these problems, direct-conversion neutron detectors as well as wide bandgap semiconductor-based detectors have been developed and studied intensely during the past years. Significant progress with respect to detection efficiency, radiation resistance, and room temperature operation was achieved. This paper reviews the latest research highlights, remaining challenges, and emerging technologies of direct-conversion neutron detectors as well as wide-bandgap semiconductor neutron detectors. This compact review serves as a reference for researchers interested in the design and development of improved neutron detectors in the future.
基金This work was financially supported by the Fundamental Research Programs of the Uzbekistan Academy of Sciences on the topic“Development and investigation of electrophysical and radiometric characteristics of large-sized ionizing radiation detectors”.
文摘Purpose Development of highly sensitive semiconductor detectors of large diameter and manufacturing of a measuring complex—a radiometer based on the developed detectors for studying the activity of alpha particles and the volumetric activity of radon in various media.Methods The detectors were manufactured using surface-barrier and heterojunction technologies.Polishing etchant formulations for silicon have been developed.To obtain plane-parallelism of the plates during chemical etching,a special dynamic setup was used.The structure of the radiometer,electrical circuits,and device software have been developed.Results The results of the development of technology for the manufacture of detectors of large dimensions(30-100 mm in diameter)are presented.Studies of the electrical and radiometric characteristics of surface-barrier n detectors and detectors based on Al-αGe-pSi-Au heterojunctions were carried out.The principle of operation of the electronic components of a radiometer made using these detectors is also given.Conclusion The data of monitoring of radon content in soil air are given.Monitoring results showed that the concentration varies depending on temperature,humidity,and time of day.The GSM/SMS module allows the device to operate in real time.
文摘Purpose Considerable advances in the fundamental knowledge and applications of radiation science have led to significant progress and development of room-temperature semiconductor radiation detectors(RTSD).The RTSDs technologies are continuously evolving with accelerated research and material engineering in the last decade.Significant scientific and technological advancements have led to development of high-performance radiation detectors with high signal-to-noise ratio(SNR),better sensitivity,faster response and higher-resolution with capability of desired room-temperature operation.This paper is a review on emerging semiconductor radiation detector materials with a deeper insight into the prospective role of Bismuth tri-iodide(BiI_(3))for room-temperature radiation detectors.Methods An introduction of the state of art of most developed semiconductor materials,i.e.,cadmium telluride(CdTe),mercury iodide(HgI_(2)),lead iodide(PbI_(2)),etc.,and a critical examination of properties,shortcomings and challenges related to their synthesis have been elaborated.Polymer-semiconductor composites with desirable properties and their integration into detector devices is also presented.Subsequent sections discuss the role of BiI_(3) as an emerging radiation detector material for room-temperature operation with an in-depth discussion on the role of defects in charge transportation and electrode configuration.Furthermore,the current challenges along with the future prospects of these materials for radiation detection to promote continuous innovation and practical applications are also elaborated.Conclusion The comprehensive review on latest developments in room-temperature radiation detector materials is expected to help establish a technological roadmap for the synthesis,fabrication and commercialization of novel materials for development of efficient radiation detectors.
