For photon detection, superconducting transition-edge sensor(TES) micro-calorimeters are excellent energy-resolving devices. In this study, we report our recent work in developing Ti-/Au-based TES. The Ti/Au TES devic...For photon detection, superconducting transition-edge sensor(TES) micro-calorimeters are excellent energy-resolving devices. In this study, we report our recent work in developing Ti-/Au-based TES. The Ti/Au TES devices were designed and implemented with a thickness ratio of 1:1 and different suspended structures using micromachining technology. The characteristics were evaluated and analyzed, including surface morphology, 3 D deformation of suspended Ti/Au TES device structure, I–V characteristics, and low-temperature superconductivity. The results showed that the surface of Ti/Au has good homogeneity and the surface roughness of Ti/Au is significantly increased compared with the substrate. The structure of Ti/Au bilayer film significantly affects the deformation of suspended devices, but the deformation does not affect the I–V characteristics of the devices. For devices with the Ti/Au bilayer(150 μm × 150 μm) and beams(100 μm × 25 μm), the transition temperature(T;) is 253 m K with a width of 6 m K, and the value of the temperature sensitivity α is 95.1.展开更多
文摘For photon detection, superconducting transition-edge sensor(TES) micro-calorimeters are excellent energy-resolving devices. In this study, we report our recent work in developing Ti-/Au-based TES. The Ti/Au TES devices were designed and implemented with a thickness ratio of 1:1 and different suspended structures using micromachining technology. The characteristics were evaluated and analyzed, including surface morphology, 3 D deformation of suspended Ti/Au TES device structure, I–V characteristics, and low-temperature superconductivity. The results showed that the surface of Ti/Au has good homogeneity and the surface roughness of Ti/Au is significantly increased compared with the substrate. The structure of Ti/Au bilayer film significantly affects the deformation of suspended devices, but the deformation does not affect the I–V characteristics of the devices. For devices with the Ti/Au bilayer(150 μm × 150 μm) and beams(100 μm × 25 μm), the transition temperature(T;) is 253 m K with a width of 6 m K, and the value of the temperature sensitivity α is 95.1.
