Research of Crossbar Switch of High Performance Network of Signal Processing System

The new type of embedded signal processing system based on the packet switched network is achieved. According to the application field and the-characteristics of signal processing system, the RapidIO protocol is used to solve the high-speed interconnection of multi-digital signal processor （DSP）. Based on this protocol, a kind of crossbar switch module which is used to interconnect multi-DSP in the system is introduced. A route strategy, some flow control rules and error control rules, which adapt to different RapidIO network topology are also introduced. Crossbar switch performance is analyzed in detail by the probability module. By researching the technique of crossbar switch and analyzing the system performance, it has a significant meaning for building the general signal processing system.

DESIGN OF TERNARY CURRENT-MODE CMOS CIRCUITS BASED ON SWITCH-SIGNAL THEORY

By applying switch-signal theory, the interaction between MOS transmission switch-ing transistor and current signal in current-mode CMOS circuits is analyzed, and the theory oftransmission current-switches which is suitable to current-mode CMOS circuits is proposed. Thecircuits, such as ternary full-adder etc., designed by using this theory have simpler circuit struc-tures and correct logic functions. It is confirmed that this theory is efficient in guiding the logicdesign of current-mode CMOS circuits at switch level.

Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch

This paper presents an accurate small-signal model for multi-gate GaAs pHEMTs in switching-mode.The extraction method for the proposed model is developed.A 2-gate switch structure is fabricated on a commercial 0.5μm AlGaAs/GaAs pHEMT technology to verify the proposed model.Excellent agreement has been obtained between the measured and simulated results over a wide frequency range.

Optical Switching and Digital Signal Amplification Using an Optical Fiber Grating OBD

It is proposed that an optical fiber grating bistability device may be used for an all optical switching or an all optical digital signal amplifier with low power and high speed. The principle, characteristic and paremeter are analysed, and some design ideas are given.

SOFT SWITCHED SYNCHRONOUS RECTIFIER WITH PHASE-SHIFTED FULL BRIDGE CONVERTER AND ITS SMALL-SIGNAL ANALYSIS

By using the output inductors and body capacitances without adding any component compared with hard switching synchronous rectifier,the topology of a soft switched synchronous rectifier with phase-shifted full bridge zero voltage switching DC/DC converter is proposed. The converter efficiency is maximized due to soft switching of the full bridge MOSFETs and the synchronous MOSFETs, and also the low conduction loss of synchronous MOSFET. The operation principles of the circuit are analyzed in detail and the small-signal model is derived, also the converter dynamic characteristics are analyzed. Frequency responses of transfer functions under different values of transformer primary leakage inductance are discussed. The experimental results were obtained from a 400 V input and 100 A/12 V output DC/DC converter operating at 100 kHz. The results show that the converter efficiency is 2% higher in rated power than traditional diode rectifier.

Broad-Band All-Optical Wavelength Conversion of Differential Phase-Shift Keyed Signal Using an SOA-Based Nonlinear Polarization Switch

Broad-band all-optical wavelength conversion of differential phase-shift keyed （DPSK） signal is experimentally demonstrated. This scheme is composed of a one-bit delay interferometer demodulation stage followed by a semiconductor optical amplifier （SOA） based nonlinear polarization switch. A wavelength converter for the 10 G b/s DPSK signal is presented, which has a wide wavelength range of more than 30 nm. The converted signals experience small power penalties less than 1.4 dB compared with the original signal, at a bit error rate of 10-9. Additionally, the optical spectra, the measured waveforms and the open eye diagrams of the converted signals show a high quality wavelength conversion performance.

Simulation of Diode-Pumped Q-Switched Nd:YAG Laser Generating Eye-Safe Signal in IOPO Environment

Numerical simulation of diode-pumped Q-switched Nd:YAG laser leading to the generation of eye-safe signal in singly resonant Intracavity Optical Parametric Oscillator (IOPO) is presented. Starting from rate equations, the time dependent laser equations have been solved numerically, whereas the space-dependent OPO equations analytically. Our results show that 1.4 J diode laser (810 nm) pulse with 200 msec width, delivers 30 mJ Nd:YAG laser (1064 nm) pulse with 5 n-second width. This Nd:YAG laser further generates 9 mJ eye safe signal (1570 nm) pulse with 2.5 n-second width.

Capacitive Microwave MEMS Switch

A novel capacitive microwave MEMS switch with a silicon/metal/dielectric as a membrane is fabricated successfully by bonding and etching-stop process. Its principal, design, and fabricating process are described in detail. A patterned dielectric layer, Ta2O5, with dielectric constant of 24 is reached. Experiment results show this novel structure,where the switch＇s dielectric layer is not prepared on the transmission line, features very low insertion loss. The insertion loss is 0.06dB at 2GHz and lower than 0.5dB in the wider range from De up to 20GHz,especially when the transmission line metal is only 0. 5μm thick.

Iterative Learning Control for a Class of Linear Discrete-time Switched Systems

在这份报纸，反复的学习控制(ILC ) 与任意的切换的信号为线性分离时间的交换系统的一个类被考虑。交换系统重复地在有限时间间隔期间被操作，这被假定，然后第一个顺序 P 类型 ILC 计划能被用来完成完美的追踪在上自始至终间隔。由超级向量途径，为在重复领域的如此的 ILC 系统的一个集中条件能被给。理论分析被模拟支持。

基于开关流图法的Buck-Boost变换器小信号建模分析

阐述Buck-Boost变换器具有输出纹波低,电压可控等优点,广泛应用于新能源汽车电池发电、直流微电网。建立小信号模型有利于对电路系统主电路的控制和控制回路的设计。分析Buck-Boost变换器,利用开关流图法和信号支路的模型建立变换器的流图,从而推导出变换器的小型号模型。

Resistive Switching Behavior of Ag/Mg0.2Zn0.8O/ZnMn2O4/p^+-Si Heterostructure Devices for Nonvolatile Memory Applications

The Ag/Mg0.2Zn0.8O/ZnMn2O4/p^＋-Si heterostructure devices were fabricated by sol-gel spin coating technique and the resistive switching behavior,conduction mechanism,endurance characteristic,and retention properties were investigated.A distinct bipolar resistive switching behavior of the devices was observed at room temperature.The resistance ratio R_（HRS）/RLRS of high resistance state and low resistance state is as large as four orders of magnitude with a readout voltage of 2.0 V.The dominant conduction mechanism of the device is trap-controlled space charge limited current（SCLC）.The devices exhibit good durability under 1×10^3cycles and the degradation is invisible for more than 10^6 s.

Effects of Electrode on Resistance Switching Properties of ZnMn_2O_4 Films Deposited by Magnetron Sputtering

ZnMn_2O_4 films for resistance random access memory（RRAM） were fabricated with different device structures by magnetron sputtering. The effects of electrode on I-V characteristics, resistance switching behavior, endurance and retention characteristics of ZnMn_2O_4 films were investigated. The ZnMn_2O_4 films, using p-Si and Pt as bottom electrode, exhibit bipolar resistive switching（BRS） behavior dominated by the space-charge-limited conduction（SCLC） mechanism in the high resistance state（HRS） and the filament conduction mechanism in the low resistance state（LRS）, but the ZnMn_2O_4 films using n-Si as bottom electrodes exhibit both bipolar and unipolar resistive switching behaviors controlled by the Poole-Frenkel（P-F） conduction mechanism in both HRS and LRS. Ag/ZnMn_2O_4/p-Si device possesses the best endurance and retention characteristics, in which the number of stable repetition switching cycle is over 1000 and the retention time is longer than 106 seconds. However, the highest RHRS/R_（LRS） ratio of 104 and the lowest V_（ON） and V_（OFF） of 3.0 V have been observed in Ag/ZnMn_2O_4/Pt device. Though the Ag/ZnMn_2O_4/n-Si device also possesses the highest RHRS/R_（LRS） ratio of 104, but the highest values of V_（ON）,V_（OFF）, RHRS and R_（LRS）, as well as the poor endurance and retention characteristics.

Resistance Switching Properties of Ag/Zn Mn_2O_4/p-Si Fabricated by Magnetron Sputtering for Resistance Random Access Memory

A resistance random access memory（RRAM） with a structure of Ag/ZnMn2O4/p-Si was fabricated by magnetron sputtering method. Reliable and repeated switching of the resistance of ZnMn2O4 fi lms was obtained between two well-defi ned states of high and low resistance with a narrow dispersion and 3V switching voltages. Resistance ratio of the high resistance state and low resistance state was found in the range of around 10^3 orders of magnitude and up to about 10^3 test cycles. The retention time of Ag/ZnMn2O4/p-Si device is longer than 10^6 seconds and the resistance ratio between two states remains higher than 10^3 at room temperature, showing a remarkable reliability performance of the RRAM devices for nonvolatile memory application. The equivalent simulation circuits for HRS（high resistance state） and LRS（low resistance state） were also studied by impedance spectroscopy.

MODERN CLIMATIC SIGNALS DEDUCED FROM STABLE ISOTOPE IN SHELLS IN XINGCUO LAKE SEDIMENTS,EAST TIBETAN PLATEAU,CHINA

Xingcuo lake,a closed one,is situated in eastern Tibetan Plateau.There are abundant snail shells Gy-raulus sibirica in its sediments.Here we display the determining results ofδ 13 C,δ 18 O in shell Gyraulus sibirica continuous-ly preserved in Xincuo Lake sediment s in the recent 50years.And by coupling the indexes ofδ 13 C,δ 18 O and instrumen-tal meteorological data in its basin to build relative function relation s among them,we probe quantitatively climatic sig-nals recorded in those indexes.The r esults show that there are remarkabl e relations betweenδ 13 C proxy and precipitation,δ 18 Oproxy and air temperature,of which correlative coefficient was 0.89an d 0.71,respectively.Besides,we also demon-strated that average variation betw eenδ 13 C proxy and precipitation(dδ 13 C /dP)was 0.027‰/mm and 1.64‰/℃forδ 18 O and air temperature(dδ 18 O /dT).

Dissecting the effects of androgen deprivation therapy on cadherin switching in advanced prostate cancer: A molecular perspective

Prostate cancer is one of the most often diagnosed malignancies in males and its prevalence is rising in both developed and developing countries.Androgen deprivation therapy has been used as a standard treatment approach for advanced prostate cancer for more than 80 years.The primary aim of androgen deprivation therapy is to decrease circulatory androgen and block androgen signaling.Although a partly remediation is accomplished at the beginning of treatment,some cell populations become refractory to androgen deprivation therapy and continue to metastasize.Recent evidences suggest that androgen deprivation therapy may cause cadherin switching,from E-cadherin to N-cadherin,which is the hallmark of epithelial-mesenchymal transition.Diverse direct and indirect mechanisms are involved in this switching and consequently,the cadherin pool changes from E-cadherin to N-cadherin in the epithelial cells.Since E-cadherin represses invasive and migrative behaviors of the tumor cells,the loss of E-cadherin disrupts epithelial tissue structure leading to the release of tumor cells into surrounding tissues and circulation.In this study,we review the androgen deprivation therapy-dependent cadherin switching in advanced prostate cancer with emphasis on its molecular basis especially the transcriptional factors regulated through TFG-βpathway.

Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Ag/ZnMn_2O_4/p^+-Si Device

ZnMn_2O_4 thin films were deposited by a sol-gel technique onto a p+-Si substrate, and a RRAM device with the Ag/ZnMn_2O_4/p^+-Si structure was fabricated. The microstructure of ZnMn_2O_4 films and the resistive switching behavior of Ag/ZnMn_2O_4/p^+-Si device were investigated. ZnMn_2O_4 thin films had a spinel structure after annealing at 650 °C for 1 h. The Ag/ZnMn_2O_4/p^+-Si device showed unipolar and/or bipolar resistive switching behavior, exhibiting different ION/IOFF ratio and switching endurance properties. In bipolar resistive switching, high-resistance-state(HRS) conduction was dominated by the space-charge-limited conduction mechanism, whereas the filament conduction mechanism dictated the low resistance state(LRS). For unipolar resistive switching, HRS and LRS were controlled by the filament conduction mechanism. For bipolar resistive switching, the conduction process can be explained by the space-charge region of the p-n junction.

Bipolar Resistive Switching in Epitaxial Mn_3O_4 Thin Films on Nb-Doped SrTiO_3 Substrates

Spinel （O01）-orientated Mn304 thin films on Nb-doped SrTi03 （001） substrates are fabricated via the pulsed laser deposition method. X-ray diffraction and high-resolution transmission electron microscopy indicate that the as-prepared epitaxial fihn is well crystaiHzed. In the film plane the orientation relationship between the film and the substrate is [lOOjMn3 04 ｜｜[110] Nb-doped SrTiO3. After an electroforming process, the film shows bipolar nonvolatile resistance switching behavior. The positive voltage bias drives the sample into a low resistance state, while the negative voltage switches it back to a high resistance state. The switching polarity is different from the previous studies. The complex impedance measurement suggests that the resistance switching behavior is of filament type. Due to the performance reproducibility and state stability, Mn3O4 might be a promising candidate for the resistive random access memory devices.

基于Robot Studio的分类码垛仿真设计

针对工业机器人轨迹规划和自动化生产协调难度大的问题,提出一种基于Robot Studio的分类码垛仿真设计方案。使用Robot Studio软件,创建工业机器人仿真工作站。通过Smart组件的设计、I/O信号的设定、工作站逻辑的建立和程序编写等工作,最终实现工业机器人智能分类码垛操作。经过模拟仿真,结果表明:分类码垛的速度和准确率均可达到预期要求。说明该分类码垛设计方案可行,可以为实际码垛工作站的搭建和生产提供一定的现实指导。

NI CompactDAQ数据采集平台新增19个I／O模块,并推出全新LabVIEW SignalExpress软件

美国国家仪器有限公司（NI）日前正式宣布将其适用于NI CompactDAQ数据采集平台的I／O模块数量增加2倍之多，并为这一基于USB的数据采集系统新添了多项关键的测量功能。此外，每一款NI CompactDAQ机箱均同步配套发售全新NI LabVIEW SignalExpress数据记录软件，在一个交互式且无需编程的软件平台上为用户带来快速的数据采集、分析和显示功能。这一全新的软件和全系列的I／O模块选择为台式、工业现场和生产线上的电气和传感器测量，提供了一个简单、完整和强大的数据记录解决方案。

Effects of Film Thickness and Ar/O2 Ratio on Resistive Switching Characteristics of HfOx-Based Resistive-Switching Random Access Memories

Cu/HfOx/n^＋Si devices are fabricated to investigate the influence of technological parameters including film thickness and Ar/02 ratio on the resistive switching （RS） characteristics of HfOx films, in terms of switch ratio, endurance properties, retention time and multilevel storage. It is revealed that the RS characteristics show strong dependence on technological parameters mainly by altering the defects （oxygen vacancies） in the film. The sample with thickness of 2Onto and Ar/O2 ratio of 12：3 exhibits the best RS behavior with the potential of multilevel storage. The conduction mechanism of all the films is interpreted based on the filamentary model.