NPN-type small and medium power switching transistors in 3DK series are used to conduct analyses and studies of accelerating degradation. Through three group studies of accelerating degradation in different temperatur...NPN-type small and medium power switching transistors in 3DK series are used to conduct analyses and studies of accelerating degradation. Through three group studies of accelerating degradation in different temperature-humidity constant stresses, the failure sensitive parameters of transistors are identified and the lifetime of samples is extrapolated from the performance degradation data. Average lifetimes in three common distributions are given, when, combined with the Hallberg-Peck temperature-humidity model, the storage lifetime of transistor samples in the natural storage condition is extrapolated between 105-10^7 h. According to its definition, the accelerating factor is 1462 in 100 ℃/100% relative humidity （RH） stress condition, and 25 ℃/25% RH stress con- dition. Finally, the degradation causes of performance parameters of the test samples are analyzed. The findings can provide certain references for the storage reliability of domestic transistors.展开更多
We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is ...We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a controllable electromigration process and the individual silicon quantum dot in the junction is deter- mined to be a Si 170 cluster. Differential conductance as a function of the bias and gate voltage clearly shows the Coulomb diamond which confirms that the transport is dominated by a single silicon quantum dot. It is found that the charging energy can be as large as 300meV, which is a result of the large capacitance of a small silicon quantum dot （-1.8 nm）. This large Coulomb interaction can potentially enable a single electron transistor to work at room temperature. The level spacing of the excited state can be as large as 10meV, which enables us to manipulate individual spin via an external magnetic field. The resulting Zeeman splitting is measured and the g factor of 2.3 is obtained, suggesting relatively weak electron-electron interaction in the silicon quantum dot which is beneficial for spin coherence time.展开更多
A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor（HEMT） switch.The new extraction method is verified by comparing the simulated S-parameters with ...A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor（HEMT） switch.The new extraction method is verified by comparing the simulated S-parameters with the measured data over the 5-40 GHz frequency range.The percentage errors E（ij） within 3.83% show the great agreement between the simulated S-parameters and the measured data.展开更多
文摘NPN-type small and medium power switching transistors in 3DK series are used to conduct analyses and studies of accelerating degradation. Through three group studies of accelerating degradation in different temperature-humidity constant stresses, the failure sensitive parameters of transistors are identified and the lifetime of samples is extrapolated from the performance degradation data. Average lifetimes in three common distributions are given, when, combined with the Hallberg-Peck temperature-humidity model, the storage lifetime of transistor samples in the natural storage condition is extrapolated between 105-10^7 h. According to its definition, the accelerating factor is 1462 in 100 ℃/100% relative humidity （RH） stress condition, and 25 ℃/25% RH stress con- dition. Finally, the degradation causes of performance parameters of the test samples are analyzed. The findings can provide certain references for the storage reliability of domestic transistors.
基金Supported by the National Key Research and Development Program of China under Grant No 2017YFA0303200the National Natural Science Foundation of China under Grant Nos U1732273,U1732159,91421109,91622115,11522432,11574217 and 61774133the Natural Science Foundation of Jiangsu Province under Grant No BK20160659
文摘We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a controllable electromigration process and the individual silicon quantum dot in the junction is deter- mined to be a Si 170 cluster. Differential conductance as a function of the bias and gate voltage clearly shows the Coulomb diamond which confirms that the transport is dominated by a single silicon quantum dot. It is found that the charging energy can be as large as 300meV, which is a result of the large capacitance of a small silicon quantum dot （-1.8 nm）. This large Coulomb interaction can potentially enable a single electron transistor to work at room temperature. The level spacing of the excited state can be as large as 10meV, which enables us to manipulate individual spin via an external magnetic field. The resulting Zeeman splitting is measured and the g factor of 2.3 is obtained, suggesting relatively weak electron-electron interaction in the silicon quantum dot which is beneficial for spin coherence time.
文摘A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor（HEMT） switch.The new extraction method is verified by comparing the simulated S-parameters with the measured data over the 5-40 GHz frequency range.The percentage errors E（ij） within 3.83% show the great agreement between the simulated S-parameters and the measured data.
