The performance damage mechanism of InP-based high electron mobility transistors(HEMTs) after proton irradiation has been investigated comprehensively through induced defects.The effects of the defect type, defect ene...The performance damage mechanism of InP-based high electron mobility transistors(HEMTs) after proton irradiation has been investigated comprehensively through induced defects.The effects of the defect type, defect energy level with respect to conduction band ET, and defect concentration on the transfer and output characteristics of the device are discussed based on hydrodynamic model and Shockley–Read–Hall recombination model.The results indicate that only acceptorlike defects have a significant influence on device operation.Meanwhile, as defect energy level ETshifts away from conduction band, the drain current decreases gradually and finally reaches a saturation value with ETabove 0.5 eV.This can be attributed to the fact that at sufficient deep level, acceptor-type defects could not be ionized any more.Additionally,the drain current and transconductance degrade more severely with larger acceptor concentration.These changes of the electrical characteristics with proton radiation could be accounted for by the electron density reduction in the channel region from induced acceptor-like defects.展开更多
We present a study on the second-order resonant interaction between the ring current protons with Whistler-mode waves propagating near the quasi electrostatic limit following the previous second-order resonant theory....We present a study on the second-order resonant interaction between the ring current protons with Whistler-mode waves propagating near the quasi electrostatic limit following the previous second-order resonant theory. The diffusion coefficients are proportional to the electric field amplitude E, much greater than those for the regular first-order resonance, which are proportional to the electric field amplitudes square E^2. Numerical calculations for the pitch angle scattering are performed for typical energies of protons Ek = 50 keV and 100 keV at locations L = 2 and L = 3.5. The timescale for the loss process of protons by the Whistler waves is found to approach one hour, comparable to that by the EMIC waves, suggesting that Whistler waves may also contribute significantly to the ring current decay under appropriate conditions.展开更多
Radiation hardened CC4007RH and non-radiation hardened CC4011 devices were irradiated using ^60Co gamma rays, 1 MeV electrons and 1-9 MeV protons to compare the ionizing radiation damage of the gamma rays with the cha...Radiation hardened CC4007RH and non-radiation hardened CC4011 devices were irradiated using ^60Co gamma rays, 1 MeV electrons and 1-9 MeV protons to compare the ionizing radiation damage of the gamma rays with the charged particles. For all devices examined, with experimental uncertainty, the radiation induced threshold voltage shifts （△Vth） generated by ^60Co gamma rays are equal to that of 1 MeV electron and 1-7 MeV proton radiation under 0 gate bias condition. Under 5 V gate bias condition, the distinction of threshold voltage shifts （△Vth） generated by ^60Co gamma rays and 1 MeV electrons irradiation are not large, and the radiation damage for protons energy the proton has, the less serious below 9 MeV is always less than the radiation damage becomes. that of ^60Co gamma rays. The lower展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11775191,61404115,61434006,and 11475256)the Development Fund for Outstanding Young Teachers in Zhengzhou University of China(Grant No.1521317004)the Doctoral Student Overseas Study Program of Zhengzhou University,China
文摘The performance damage mechanism of InP-based high electron mobility transistors(HEMTs) after proton irradiation has been investigated comprehensively through induced defects.The effects of the defect type, defect energy level with respect to conduction band ET, and defect concentration on the transfer and output characteristics of the device are discussed based on hydrodynamic model and Shockley–Read–Hall recombination model.The results indicate that only acceptorlike defects have a significant influence on device operation.Meanwhile, as defect energy level ETshifts away from conduction band, the drain current decreases gradually and finally reaches a saturation value with ETabove 0.5 eV.This can be attributed to the fact that at sufficient deep level, acceptor-type defects could not be ionized any more.Additionally,the drain current and transconductance degrade more severely with larger acceptor concentration.These changes of the electrical characteristics with proton radiation could be accounted for by the electron density reduction in the channel region from induced acceptor-like defects.
基金Supported by the National Natural Science Foundation of China under Grant Nos 40774078, 40404012, 40474064 and 40674076, and the Visiting Scholar Foundation of State Key Laboratory for Space Weather, Chinese Academy Sciences.
文摘We present a study on the second-order resonant interaction between the ring current protons with Whistler-mode waves propagating near the quasi electrostatic limit following the previous second-order resonant theory. The diffusion coefficients are proportional to the electric field amplitude E, much greater than those for the regular first-order resonance, which are proportional to the electric field amplitudes square E^2. Numerical calculations for the pitch angle scattering are performed for typical energies of protons Ek = 50 keV and 100 keV at locations L = 2 and L = 3.5. The timescale for the loss process of protons by the Whistler waves is found to approach one hour, comparable to that by the EMIC waves, suggesting that Whistler waves may also contribute significantly to the ring current decay under appropriate conditions.
基金Supported by National Defence Foundation of China (3110060403)
文摘Radiation hardened CC4007RH and non-radiation hardened CC4011 devices were irradiated using ^60Co gamma rays, 1 MeV electrons and 1-9 MeV protons to compare the ionizing radiation damage of the gamma rays with the charged particles. For all devices examined, with experimental uncertainty, the radiation induced threshold voltage shifts （△Vth） generated by ^60Co gamma rays are equal to that of 1 MeV electron and 1-7 MeV proton radiation under 0 gate bias condition. Under 5 V gate bias condition, the distinction of threshold voltage shifts （△Vth） generated by ^60Co gamma rays and 1 MeV electrons irradiation are not large, and the radiation damage for protons energy the proton has, the less serious below 9 MeV is always less than the radiation damage becomes. that of ^60Co gamma rays. The lower
